AZ® 125nXT-10B Ultra-Thick Negative Resist for Plating   General Information AZ® 125nXT-10B for 25 - 200 µm Resist Film Thickness (i-line) The AZ® 125nXT-10B is a negative resist for film thicknesses up to over 100 µm with at the same time very high sidewall steepness. And even more (1 mm resist film thickness realized!) with very steep sidewalls and special coating techniques It’s cross-linking and very good resist adhesion make it stable in all conventional electroplating applications. This resist does not require a post exposure bake. 20 µm lines at 60 µm resist film thickness. 15 µm holes at 60 µm resist film thickness. 80 µm plated CuNi image. Product Properties 30 – 100 µm resist film thickness via single-coating Up to 1 mm resist film thickness possible Aqueous alkaline developers (e. g. AZ® 326/726/2026 MIF) No post exposure bake, photo-polymerization during exposure No rehydration required, no N2-formation during exposure Very good adhesion, no underplating Wet stripping processes (e. g. TechniStrip P1316) Optimized for electroplating, wet- and dry etching Developers We recommend the TMAH-based, ready-to-use AZ® 2026 MIF Developer. AZ® 326 MIF and AZ® 726 MIF are possible as well. Removers The recommended stripper for the AZ® 125nXT-10B is the NMP-free TechniStrip P1316, in case of alkaline sensitive substrate materials use the TechniStrip P1331 or TechniStrip MLO07. Solvents such as NMP or the untoxic substitute DMSO are suited removers, if the resist film thickness and degree of cross-linking are not too high. Generally, heating the removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten the resist removal in the case of very thick resist films. Resist pattern and plated structures attained with a 60 and 120 µm thick AZ® 125nXT. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the products AZ® EBR Solvent or AZ® EBR Solvent 70/30. Further Information MSDS: Safety Data Sheet AZ® 125nXT-10B english Sicherheitsdatenblatt AZ® 125nXT-10B german TDS: Technical Data Sheet AZ® 125nXT-10B english Application Notes: Further Information about Photoresist Processing

AZ® 15nXT (115CPS) Thick Negative Resist for Plating   General Information AZ® 15nXT (115CPS) for 3 - 6 µm Resist Film Thickness (i-line) The AZ® 15nXT (115CPS) is a negative resist for film thicknesses up to approx. 6 µm, with a resist film thickness of 3.5 µm at 4000 rpm. Its cross-linking character and its very good resist adhesion make it stable, for example, for all conventional electroplating applications. Up to about 6 µm resist film thickness, the resist sidewalls are vertical, with larger film thicknesses, increasingly negative (undercut) so that the moulded metal structures taper towards the top. A post exposure bake is obligatory to carry out the cross-linking initiated during exposure. 5 µm lines at 10 µm resist film thickness. 5 µm holes at 10 µm resist film thickness. 5 µm plated CuNi image. 3.6 µm plated CuNi image. Product Properties 3 - 6 µm resist film thickness via single-coating Aqueous alkaline developers, preferably AZ® 2026 MIF Excellent adhesion, no underplating Wide substrate compatibility: Cu, Au, Ti, NiFe, … Wide plating compatibility: Cu, Ni, Au, … Standard wet stripping processes Almost vertical sidewall angles Developers We recommend the TMAH-based, ready-to-use AZ® 2026 MIF Developer. AZ® 326 MIF and AZ® 726 MIF are possible as well. Removers The recommended stripper for the AZ® 15nXT is the NMP-free, nontoxic TechniStrip NI555 or the AZ® 910 Remover, which is compatible with all common (even alkaline sensitive) substrate materials and can even dissolve (not only peel from the substrate) cross linked AZ® 15nXT resist films. Solvents such as NMP or the nontoxic substitute DMSO are suited removers, if the resist film thickness and degree of crosslinking are not too high. Generally, heating these removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten the resist removal in the case of very thick or strongly crosslinked resist films. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the products AZ® EBR Solvent or PGMEA. Further Information MSDS: Safety Data Sheet AZ® 15nXT (115CPS) Photoresist english Sicherheitsdatenblatt AZ® 15nXT (115CPS) Fotolack german TDS: Technical Data Sheet AZ® 15nXT (115CPS) Photoresist english Technical Data Sheet AZ® 15nXT Series english Application Notes: Further Information about Photoresist Processing

AZ® 15nXT (450CPS) Thick Negative Resist for Plating   General Information AZ® 15nXT (450CPS) for 5 - 20 µm Resist Film Thickness (i-line) The AZ® 15nXT (450CPS) is a negative resist for film thicknesses up to approx. 20 µm, with a resist film thickness of ~ 6 µm at 4000 rpm. Its cross-linking character and its very good resist adhesion make it stable, for example, for all conventional electroplating applications. Up to about 10 µm resist film thickness, the resist sidewalls are vertical, with larger film thicknesses, increasingly negative (undercut) so that the moulded metal structures taper towards the top. A post exposure bake is obligatory to carry out the cross-linking initiated during exposure. 5 µm lines at 10 µm resist film thickness. 5 µm holes at 10 µm resist film thickness. 5 µm plated CuNi image. 3.6 µm plated CuNi image. Product Properties 5 - 20 µm resist film thickness via single-coating Aqueous alkaline developers, preferably AZ® 2026 MIF Excellent adhesion, no underplating Wide substrate compatibility: Cu, Au, Ti, NiFe, … Wide plating compatibility: Cu, Ni, Au, … Standard wet stripping processes Almost vertical sidewall angles Developers We recommend the TMAH-based, ready-to-use AZ® 2026 MIF Developer. AZ® 326 MIF and AZ® 726 MIF are possible as well. Removers The recommended stripper for the AZ® 15nXT is the NMP-free, nontoxic TechniStrip NI555 or the AZ® 910 Remover, which is compatible with all common (even alkaline sensitive) substrate materials and can even dissolve (not only peel from the substrate) cross-linked AZ® 15nXT resist films. Solvents such as NMP or the nontoxic substitute DMSO are suited removers, if the resist film thickness and degree of cross-linking are not too high. Generally, heating these removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten the resist removal in the case of very thick or strongly cross-linked resist films. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the products AZ® EBR Solvent or PGMEA. Further Information MSDS: Safety Data Sheet AZ® 15nXT (450CPS) Photoresist english Sicherheitsdatenblatt AZ® 15nXT (450CPS) Fotolack german TDS: Technical Data Sheet AZ® 15nXT (450CPS) Photoresist english Technical Data Sheet AZ® 15nXT Series english Information AZ® 15nXT (450CPS) Photoresist english Application Notes: Further Information about Photoresist Processing

AZ® LNR-003 Negative Resist for Lift-off Applications   General Information AZ® LNR-003 is a negative resist for film thicknesses of approx. 3 - 5 µm (diluted down to 1 µm), which allows an adjustable and strong undercut (negative resist profile) even at small resist film thicknesses for also ambitious lift-off applications. Its high thermal stability prohibits thermal reflow during coating for reproducible lift-off results. Product Properties High resolution Very strong undercut, for lift-off Compatible with TMAH-based developers, other developers are possible Compatible with all common strippers (e. g. with AZ® 100 Remover, organic solvents, or aqueous alkaline) i-line sensitive (approx. 320 - 390 nm) Resist film thickness range approx. 3 - 5 µm High thermal stability Developers We recommend the TMAH-based developers AZ® 2026 MIF, AZ® 326 MIF or AZ® 726 MIF. Other NaOH- or KOH-based developers are generally possible. Removers We recommend the NMP-free removers such as AZ® 910 Remover or TechniStrip NI555 or, in case of alkaline sensitive materials such as aluminium, TechniStrip MLO07, which both can dissolve also crosslinked resist films. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent. Further Information MSDS: Safety Data Sheet AZ® LNR-003 Photoresist english Sicherheitsdatenblatt AZ® LNR-003 Fotolack german TDS: Technical Data Sheet AZ® LNR-003 english Information AZ® LNR-003 english Application Notes: Further Information about Photoresist Processing

AZ® LNR-003 diluted - 1:0.3 with PGMEA Negative Resist for Lift-off Applications   General Information AZ® LNR-003 is a negative resist for film thicknesses of approx. 3 - 5 µm (diluted down to 1 µm), which allows an adjustable and strong undercut (negative resist profile) even at small resist film thicknesses for also ambitious lift-off applications. Its high thermal stability prohibits thermal reflow during coating for reproducible lift-off results. Product Properties High resolution Very strong undercut, for lift-off Compatible with TMAH-based developers, other developers are possible Compatible with all common strippers (e. g. with AZ® 100 Remover, organic solvents, or aqueous alkaline) i-line sensitive (approx. 320 - 390 nm) Resist film thickness range approx. 3 - 5 µm High thermal stability Developers We recommend the TMAH-based developers AZ® 2026 MIF, AZ® 326 MIF or AZ® 726 MIF. Other NaOH- or KOH-based developers are generally possible. Removers We recommend the NMP-free removers such as AZ® 910 Remover or TechniStrip NI555 or, in case of alkaline sensitive materials such as aluminium, TechniStrip MLO07, which both can dissolve also crosslinked resist films. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent. Further Information MSDS: Safety Data Sheet AZ® LNR-003 Photoresist english Sicherheitsdatenblatt AZ® LNR-003 Fotolack german TDS: Technical Data Sheet AZ® LNR-003 english Information AZ® LNR-003 english Application Notes: Further Information about Photoresist Processing

AZ® nLOF 2020 Thick Negative Resist for Lift Off   General Information AZ® nLOF 2020 Photoresist for 2-10 µm Resist Film Thickness (i-line) The AZ® nLOF 2000 series is optimised with undercut resist profiles and high resistance to thermal flow for lift-off applications. The three viscosity grades AZ® nLOF 2020 (2.0 µm resist layer thickness at 4000 rpm), AZ® nLOF 2035 (3.5 µm) and AZ® nLOF 2070 (7.0 µm) cover a large resist layer thickness range with a high possible aspect ratio. A post exposure bake is obligatory to carry out the cross-linking initiated during exposure. Beside the resist types above, MicroChemicals dilutes the AZ® nLOF 2000 series to different thickness levels. 700 nm resist lines attained with the 2.0 µm thick AZ® nLOF 2020. Product Properties AZ® nLOF 2020 for film thickness 2.0 µm @ 3000 rpm i-line sensitive (365 nm), not g- or h-line sensitive Very high thermal stability: Almost no rounding of cross-linked resist patterns up to temperatures of 250°C and more. High chemical stability: Dependant on process parameters, AZ® nLOF 2000 series is stable against many organic solvents as well as strong alkaline media (however, not stable against KOH Si-etches!). The e-beam sensitivity of the AZ® nLOF 2000 series resists allows the combination of fast UV and high-resolution e-beam lithography. (Please contact us for further information!) Reproducible undercut for excellent lift off results High yield in industrial processes due to large process window Developers The recommended developer is the AZ® 2026 MIF which works best with AZ® nLof 2000 series. AZ® 326 MIF or AZ® 726 MIF are possible as well. KOH- or NaOH based developers or AZ® Developer will not give reasonable results. Only AZ® 303 Developer can be used in cases, where TMAH based developers are no option. Removers The recommended stripper for the AZ® nLOF 2000 series is the NMP-free TechniStrip NI555 or AZ® 910 Remover, which is compatible with all common (even alkaline sensitive) substrate materials and can even dissolve (not only peel from the substrate) cross-linked AZ® nLOF 2070 resist films. Solvents such as NMP or the untoxic substitute DMSO are suited removers, if the resist film thickness and degree of crosslinking are not too high. Generally, heating these removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten the resist removal in the case of very thick or strongly cross-linked resist films. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® nLOF2020 Photoresist english Sicherheitsdatenblatt AZ® nLOF2020 Fotolack german TDS: Technical Data Sheet AZ® nLOF2000 Series english Information AZ® nLOF2000 Series english Application Notes: Further Information about Photoresist Processing

AZ® nLOF 2035 Thick Negative Resist for Lift Off   General Information AZ® nLOF 2035 Photoresist for 3-5 µm Resist Film Thickness (i-line) The AZ® nLOF 2000 series is optimised with undercut resist profiles and high resistance to thermal flow for lift-off applications. The three viscosity grades AZ® nLOF 2020 (2.0 µm resist layer thickness at 4000 rpm), AZ® nLOF 2035 (3.5 µm) and AZ® nLOF 2070 (7.0 µm) cover a large resist layer thickness range with a high possible aspect ratio. A post exposure bake is obligatory to carry out the cross-linking initiated during exposure. Beside the resist types above, MicroChemicals dilutes the AZ® nLOF 2000 series to different thickness levels. 700 nm resist lines attained with the 3.5 µm thick AZ® nLOF 2035.* Product Properties AZ® nLOF 2035 for film thickness 3.5 µm @ 3000 rpm i-line sensitive (365 nm), not g- or h-line sensitive Very high thermal stability: Almost no rounding of cross-linked resist patterns up to temperatures of 250°C and more. High chemical stability: Dependant on process parameters, AZ® nLOF 2000 series is stable against many organic solvents as well as strong alkaline media (however, not stable against KOH Si-etches!). The e-beam sensitivity of the AZ® nLOF 2000 series resists allows the combination of fast UV and high-resolution e-beam lithography. (Please contact us for further information!) Reproducible undercut for excellent lift off results High yield in industrial processes due to large process window Developers The recommended developer is the AZ® 2026 MIF which works best with AZ® nLof 2000 series. AZ® 326 MIF or AZ® 726 MIF are possible as well. KOH- or NaOH based developers or AZ® Developer will not give reasonable results. Only AZ® 303 Developer can be used in cases, where TMAH based developers are no option. Removers The recommended stripper for the AZ® nLOF 2000 series is the NMP-free TechniStrip NI555 or AZ® 910 Remover, which is compatible with all common (even alkaline sensitive) substrate materials and can even dissolve (not only peel from the substrate) cross-linked AZ® nLOF 2070 resist films. Solvents such as NMP or the untoxic substitute DMSO are suited removers, if the resist film thickness and degree of crosslinking are not too high. Generally, heating these removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten the resist removal in the case of very thick or strongly cross-linked resist films. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® nLOF2035 Photoresist english Sicherheitsdatenblatt AZ® nLOF2035 Fotolack german TDS: Technical Data Sheet AZ® nLOF2000 Series english Information AZ® nLOF2000 Series english Application Notes: Further Information about Photoresist Processing

AZ® nLOF 2070 - diluted 1:1.33 - 0.50 µm-grade (e-beam) Thick Negative Resist for Lift Off   General Information AZ® nLOF 2070 Photoresist for 5-15 µm Resist Film Thickness (i-line) The AZ® nLOF 2000 series is optimised with undercut resist profiles and high resistance to thermal flow for lift-off applications. The three viscosity grades AZ® nLOF 2020 (2.0 µm resist layer thickness at 4000 rpm), AZ® nLOF 2035 (3.5 µm) and AZ® nLOF 2070 (7.0 µm) cover a large resist layer thickness range with a high possible aspect ratio. A post exposure bake is obligatory to carry out the cross-linking initiated during exposure. Beside the resist types above, MicroChemicals dilutes the AZ® nLOF 2000 series to different thickness levels. Product Properties AZ® nLOF 2070 for film thickness 7.0 µm @ 3000 rpm i-line sensitive (365 nm), not g- or h-line sensitive Very high thermal stability: Almost no rounding of cross-linked resist patterns up to temperatures of 250°C and more. High chemical stability: Dependant on process parameters, AZ® nLOF 2000 series is stable against many organic solvents as well as strong alkaline media (however, not stable against KOH Si-etches!). The e-beam sensitivity of the AZ® nLOF 2000 series resists allows the combination of fast UV and high-resolution e-beam lithography. (Please contact us for further information!) Reproducible undercut for excellent lift off results High yield in industrial processes due to large process window Developers The recommended developer is the AZ® 2026 MIF which works best with AZ® nLof 2000 series. AZ® 326 MIF or AZ® 726 MIF are possible as well. KOH- or NaOH based developers or AZ® Developer will not give reasonable results. Only AZ® 303 Developer can be used in cases, where TMAH based developers are no option. Removers The recommended stripper for the AZ® nLOF 2000 series is the NMP-free TechniStrip NI555 or AZ® 910 Remover, which is compatible with all common (even alkaline sensitive) substrate materials and can even dissolve (not only peel from the substrate) cross-linked AZ® nLOF 2070 resist films. Solvents such as NMP or the untoxic substitute DMSO are suited removers, if the resist film thickness and degree of crosslinking are not too high. Generally, heating these removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten the resist removal in the case of very thick or strongly cross-linked resist films. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® nLOF2070 Photoresist english Sicherheitsdatenblatt AZ® nLOF2070 Fotolack german TDS: Technical Data Sheet AZ® nLOF2000 Series english Information AZ® nLOF2000 Series english Information AZ® nLOF2070 E-beam english Application Notes: Further Information about Photoresist Processing

AZ® nLOF 2070 Thick Negative Resist for Lift Off   General Information AZ® nLOF 2070 Photoresist for 5-15 µm Resist Film Thickness (i-line) The AZ® nLOF 2000 series is optimised with undercut resist profiles and high resistance to thermal flow for lift-off applications. The three viscosity grades AZ® nLOF 2020 (2.0 µm resist layer thickness at 4000 rpm), AZ® nLOF 2035 (3.5 µm) and AZ® nLOF 2070 (7.0 µm) cover a large resist layer thickness range with a high possible aspect ratio. A post exposure bake is obligatory to carry out the cross-linking initiated during exposure. Beside the resist types above, MicroChemicals dilutes the AZ® nLOF 2000 series to different thickness levels. A pronounced undercut attained with the AZ® nLOF 2070 in a thickness of 22 µm. Product Properties AZ® nLOF 2070 for film thickness 7.0 µm @ 3000 rpm i-line sensitive (365 nm), not g- or h-line sensitive Very high thermal stability: Almost no rounding of cross-linked resist patterns up to temperatures of 250°C and more. High chemical stability: Dependant on process parameters, AZ® nLOF 2000 series is stable against many organic solvents as well as strong alkaline media (however, not stable against KOH Si-etches!). The e-beam sensitivity of the AZ® nLOF 2000 series resists allows the combination of fast UV and high-resolution e-beam lithography. (Please contact us for further information!) Reproducible undercut for excellent lift off results High yield in industrial processes due to large process window Developers The recommended developer is the AZ® 2026 MIF which works best with AZ® nLof 2000 series. AZ® 326 MIF or AZ® 726 MIF are possible as well. KOH- or NaOH based developers or AZ® Developer will not give reasonable results. Only AZ® 303 Developer can be used in cases, where TMAH based developers are no option. Removers The recommended stripper for the AZ® nLOF 2000 series is the NMP-free TechniStrip NI555 or AZ® 910 Remover, which is compatible with all common (even alkaline sensitive) substrate materials and can even dissolve (not only peel from the substrate) cross-linked AZ® nLOF 2070 resist films. Solvents such as NMP or the untoxic substitute DMSO are suited removers, if the resist film thickness and degree of crosslinking are not too high. Generally, heating these removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten the resist removal in the case of very thick or strongly cross-linked resist films. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® nLOF2070 Photoresist english Sicherheitsdatenblatt AZ® nLOF2070 Fotolack german TDS: Technical Data Sheet AZ® nLOF2000 Series english Information AZ® nLOF2000 Series english Application Notes: Further Information about Photoresist Processing

AZ® nLOF 5510 Thermally Stable Negative Resist   General Information The AZ® nLOF 5510 is a thin, high-resolution negative resist with high thermal stability. This resist is designed for single layer lift off processes as well as for RIE etching or ion implantation and is compatible with TMAH-based developers. Product Properties AZ® nLOF 5510 for film thickness 0.8 µm @ 4000 rpm i-line sensitive (365 nm), not g- or h-line sensitive Very high thermal stability: Almost no rounding of cross-linked resist patterns up to temperatures of 250°C and more Resolution down to 0.25 µm Can be used for lift off, RIE or implant applications Developers Common TMAH based developers are recommended such as AZ® 326 MIF, AZ® 726 MIF or AZ® 2026 MIF Developer. Removers The recommended stripper for the AZ® nLOF 5510 resist is the NMP-free TechniStrip NI555 or AZ® 910 Remover, which is compatible with all common (even alkaline sensitive) substrate materials and can even dissolve (not only peel from the substrate) cross-linked AZ® nLOF 5510 resist films. Solvents such as NMP or the untoxic substitute DMSO are suited removers, if the resist film thickness and degree of crosslinking are not too high. Generally, heating these removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten the resist removal in the case of very thick or strongly cross-linked resist films. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® nLOF5510 Photoresist english Sicherheitsdatenblatt AZ® nLOF5510 Fotolack german TDS: Technical Data Sheet AZ® nLOF5510 english Application Notes: Further Information about Photoresist Processing