AZ® 10XT (220CPS) Thick Resists for High Resolution   General Information Compared to the AZ® 4500 series, the AZ® 10XT resists have a lower optical absorption. This simplifies the exposure of (also very) thick resist films. Therefore, in combination with the missing g-line sensitivity, the AZ® 10XT series needs a higher exposure time under broadband condition, and reveals a lower development rate as compared to AZ® 4500 films processed under the same conditions. On the other hand, the AZ® 10XT shows a very high aspect ratio and resolution. For lower resist film thicknesses we recommend a dilution with PGMEA = AZ® EBR Solvent. The following resist film thicknesses refer to 4000 rpm under standard conditions: 4.0 µm: 100g AZ® 10XT + 13g PGMEA 3.0 µm: 100g AZ® 10XT + 23g PGMEA 2.0 µm: 100g AZ® 10XT + 42g PGMEA 1.5 µm: 100g AZ® 10XT + 55g PGMEA 1.0 µm: 100g AZ® 10XT + 88g PGMEA The AZ® 10XT is a PFOS-free alternative to the AZ® 9260, which was discontinued in 2019. Viscosity and process parameters are identical to the former AZ® 9260.   3.0 µm lines in 12 µm thick AZ® 10XT Ultratech 1500 Exposure, AZ® 400K Developer 1:4 (260s spray)   Product Properties Good resist adhesion to all common substrate materials Compatible with all common developers (KOH- or TMAH-based) Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline) h- and i-line sensitive (approx. 320 - 410 nm) Resist film thickness range approx. 5 - 30 µm Developers The recommended developers for the AZ® 10XT photoresist are AZ® 400K 1:4 or AZ® 726 MIF. In case of very thick resist films, a rather strong developer concentration such as AZ® 400K 1:3.5 - 1:3.0 might be reasonable for required short development times. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals. Thinning/ Edge Bead Removal We recommend for thinning the AZ® EBR Solvent. Further Information MSDS: Safety Data Sheet AZ® 10XT (220cps) english Sicherheitsdatenblatt AZ® 10XT (220cps) german TDS: Technical Data Sheet AZ® 10XT (220cps) english Application Notes: Further Information about Photoresist Processing

AZ® 10XT (520CPS) Thick Resists for High Resolution   General Information Compared to the AZ® 4500 series, the AZ® 10XT resists have a lower optical absorption. This simplifies the exposure of (also very) thick resist films. Therefore, in combination with the missing g-line sensitivity, the AZ® 10XT series needs a higher exposure time under broadband condition, and reveals a lower development rate as compared to AZ® 4500 films processed under the same conditions. On the other hand, the AZ® 10XT shows a very high aspect ratio and resolution. For lower resist film thicknesses we recommend a dilution with PGMEA = AZ® EBR Solvent. The following resist film thicknesses refer to 4000 rpm under standard conditions: 4.0 µm: 100g AZ® 10XT + 13g PGMEA 3.0 µm: 100g AZ® 10XT + 23g PGMEA 2.0 µm: 100g AZ® 10XT + 42g PGMEA 1.5 µm: 100g AZ® 10XT + 55g PGMEA 1.0 µm: 100g AZ® 10XT + 88g PGMEA The AZ® 10XT is a PFOS-free alternative to the AZ® 9260, which was discontinued in 2019. Viscosity and process parameters are identical to the former AZ® 9260.   3.0 µm lines in 12 µm thick AZ® 10XT Ultratech 1500 Exposure, AZ® 400K Developer 1:4 (260s spray)   Product Properties Good resist adhesion to all common substrate materials Compatible with all common developers (KOH- or TMAH-based) Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline) h- and i-line sensitive (approx. 320 - 410 nm) Resist film thickness range approx. 5 - 30 µm Developers The recommended developers for the AZ® 10XT photoresist are AZ® 400K 1:4 or AZ® 726 MIF. In case of very thick resist films, a rather strong developer concentration such as AZ® 400K 1:3.5 - 1:3.0 might be reasonable for required short development times. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals. Thinning/ Edge Bead Removal We recommend for thinning the AZ® EBR Solvent. Further Information MSDS: Safety Data Sheet AZ® 10XT (520cps) english Sicherheitsdatenblatt AZ® 10XT (520cps) german TDS: Technical Data Sheet AZ® 10XT (520cps) english Application Notes: Further Information about Photoresist Processing

AZ® 125nXT-10B Ultra-Thick Negative Resist for Plating   General Information AZ® 125nXT-10B for 25 - 200 µm Resist Film Thickness (i-line) The AZ® 125nXT-10B is a negative resist for film thicknesses up to over 100 µm with at the same time very high sidewall steepness. And even more (1 mm resist film thickness realized!) with very steep sidewalls and special coating techniques It’s cross-linking and very good resist adhesion make it stable in all conventional electroplating applications. This resist does not require a post exposure bake. 20 µm lines at 60 µm resist film thickness. 15 µm holes at 60 µm resist film thickness. 80 µm plated CuNi image. Product Properties 30 – 100 µm resist film thickness via single-coating Up to 1 mm resist film thickness possible Aqueous alkaline developers (e. g. AZ® 326/726/2026 MIF) No post exposure bake, photo-polymerization during exposure No rehydration required, no N2-formation during exposure Very good adhesion, no underplating Wet stripping processes (e. g. TechniStrip P1316) Optimized for electroplating, wet- and dry etching Developers We recommend the TMAH-based, ready-to-use AZ® 2026 MIF Developer. AZ® 326 MIF and AZ® 726 MIF are possible as well. Removers The recommended stripper for the AZ® 125nXT-10B is the NMP-free TechniStrip P1316, in case of alkaline sensitive substrate materials use the TechniStrip P1331 or TechniStrip MLO07. Solvents such as NMP or the untoxic substitute DMSO are suited removers, if the resist film thickness and degree of cross-linking are not too high. Generally, heating the removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten the resist removal in the case of very thick resist films. Resist pattern and plated structures attained with a 60 and 120 µm thick AZ® 125nXT. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the products AZ® EBR Solvent or AZ® EBR Solvent 70/30. Further Information MSDS: Safety Data Sheet AZ® 125nXT-10B english Sicherheitsdatenblatt AZ® 125nXT-10B german TDS: Technical Data Sheet AZ® 125nXT-10B english Application Notes: Further Information about Photoresist Processing

AZ® 15nXT (450CPS) Thick Negative Resist for Plating   General Information AZ® 15nXT (450CPS) for 5 - 20 µm Resist Film Thickness (i-line) The AZ® 15nXT (450CPS) is a negative resist for film thicknesses up to approx. 20 µm, with a resist film thickness of ~ 6 µm at 4000 rpm. Its cross-linking character and its very good resist adhesion make it stable, for example, for all conventional electroplating applications. Up to about 10 µm resist film thickness, the resist sidewalls are vertical, with larger film thicknesses, increasingly negative (undercut) so that the moulded metal structures taper towards the top. A post exposure bake is obligatory to carry out the cross-linking initiated during exposure. 5 µm lines at 10 µm resist film thickness. 5 µm holes at 10 µm resist film thickness. 5 µm plated CuNi image. 3.6 µm plated CuNi image. Product Properties 5 - 20 µm resist film thickness via single-coating Aqueous alkaline developers, preferably AZ® 2026 MIF Excellent adhesion, no underplating Wide substrate compatibility: Cu, Au, Ti, NiFe, … Wide plating compatibility: Cu, Ni, Au, … Standard wet stripping processes Almost vertical sidewall angles Developers We recommend the TMAH-based, ready-to-use AZ® 2026 MIF Developer. AZ® 326 MIF and AZ® 726 MIF are possible as well. Removers The recommended stripper for the AZ® 15nXT is the NMP-free, nontoxic TechniStrip NI555 or the AZ® 910 Remover, which is compatible with all common (even alkaline sensitive) substrate materials and can even dissolve (not only peel from the substrate) cross-linked AZ® 15nXT resist films. Solvents such as NMP or the nontoxic substitute DMSO are suited removers, if the resist film thickness and degree of cross-linking are not too high. Generally, heating these removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten the resist removal in the case of very thick or strongly cross-linked resist films. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the products AZ® EBR Solvent or PGMEA. Further Information MSDS: Safety Data Sheet AZ® 15nXT (450CPS) Photoresist english Sicherheitsdatenblatt AZ® 15nXT (450CPS) Fotolack german TDS: Technical Data Sheet AZ® 15nXT (450CPS) Photoresist english Technical Data Sheet AZ® 15nXT Series english Information AZ® 15nXT (450CPS) Photoresist english Application Notes: Further Information about Photoresist Processing

AZ® 40XT Chemically Amplified Thick Photoresist   General Information AZ® 40XT for 15 - 100 µm Resist Film Thickness (i-line) The chemically amplified AZ® 40 XT is an ultra thick resist whose high viscosity allows very large resist film thicknesses via a single coating. It does not require rehydration, requires low light doses, releases no nitrogen during exposure and develops very rapidly, thus permitting significantly shorter process times compared to standard thick resist films. However, the AZ® 40XT necessarily requires a Post Exposure Bake to be developed. Remark: The maximum soft bake temperature must not be applied abruptly, in order to prevent the formation of bubbles in the resist film. We recommend either the usage of a proximity hotplate, or a temperature ramp on a contact hotplate. The correct temperature ramps are crucial for bubble free resist processing with this resist.   Lines and spaces varying from 100 to 10 µm with a 40 µm thick AZ® 40XT at 400 mJ/cm2 exposure dose Product Properties 15 - 100 µm resist film thickness via single-coating Aqueous alkaline developers (e.g. AZ® 326/726/2026 MIF) No rehydration required, no N2-formation during exposure Very good adhesion, very steep resist sidewalls Can be stripped wet- and dry-chemically Optimized for electroplating, wet- and dry etching i-line sensitive (approx. 330 – 390 nm) Developers We recommend common TMAH-based developers such as the AZ® 326 MIF, AZ® 726 MIF or AZ® 2026 MIF developer. Removers AZ® 40XT photoresist is compatible with industry standard solvent based removers (e.g. NMP, DMSO, AZ® 920 Remover or Technistrip MLO07). Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal AZ® EBR Solvent or PGMEA. AZ® EBR70/30 Solvent is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® 40XT Photoresist english Sicherheitsdatenblatt AZ® 40XT Fotolack german TDS: Technical Data Sheet AZ® 40XT Photoresist english Application Notes: Further Information about Photoresist Processing

AZ® 4999 Spray Coating   General Information AZ®4999 is a spray coating dedicated highly transparent photoresist tailored to excel on special spray coating equipment (e.g. SUSS Delta AltaSpray) where it provides defect free and conformal coatings on devices with severe topography. Thick (several to several tens of microns) and uniform resist coatings are obtained on topography such as V-grooves and trenches with optimum coverage of sharp edges. There is no accumulation of resist in trenches. The use of AZ®4999 photoresist enables high reproducibility in volume production applications. Product Properties Viscosity (at 25°C): 0.52 cSt Solids content: 4 % Absorptivity at 398 nm: 0.1 l/(g*cm) Spectral sensitivity: 310 nm – 440 nm Developers If metal ion containing developers can be used, the KOH-based AZ® 400K in a 1:4 dilution (for higher resist film thicknesses 1:3.5 - 1:3 diluted possible) is a suited developer. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 2026 MIF developer (undiluted). Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents cab be used as stripper. If the resist film is crosslinked (e. g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the products AZ® EBR Solvent or PGMEA. Further Information MSDS: Safety Data Sheet AZ® 4999 Photoresist english Sicherheitsdatenblatt AZ® 4999 Fotolack german TDS: Technical Data Sheet AZ® 4999 Photoresist english Application Notes: Further Information about Photoresist Processing

AZ® 5214E Image Reversal Resist for High Resolution   General Information This special photoresist is intended for lift-off techniques which call for a negative side wall profile. The reversal bake moderately cross-links the exposed resist making the developed structures thermally stable up to approx. 130°C. Due to the comparably low resist film thickness of ~1.4 µm, the process parameter window for an undercut is rather small thus requiring some optimizations in the exposure dose and the reversal bake parameters. Therefore, if the resolution required is not in the sub-µm range, a thicker resist such as the AZ® LNR-003 (next section), or the AZ® nLOF 2000 negative resists might be a good alternative. The undercut of AZ® 5214E attained under optimized process parameters. Product Properties Very high resolution as a positive resist as well as a negative resist Possible negative sidewall profile in image reversal mode Compatible with all common developers (NaOH-, KOH- or TMAH-based) Compatible with all common strippers (e. g. with AZ® 100 Remover, organic solvents, or aqueous alkaline) h- and i-line sensitive (approx. 320 - 405 nm) Resist film thickness range approx. 1.0 – 1.8 µm High thermal stability especially in image reversal mode Developers If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 dilution recommended) is a suited developer. The KOH-based AZ® 400K (also 1:4 - 1:5 diluted) is also possible. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 726 MIF or AZ® 326 MIF developer, normally undiluted, or - for maximum resolution - moderately 3:1 - 2:1 ( 3 parts Developer :1 part of DI-Water) diluted with water. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents cab be used as stripper. If the resist film is crosslinked (e. g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the products AZ® EBR Solvent or PGMEA. Further Information MSDS: Safety Data Sheet AZ® 5214E Photoresist english Sicherheitsdatenblatt AZ® 5214E Fotolack german TDS: Technical Data Sheet AZ® 5214E Photoresist english Application Notes: Further Information about Photoresist Processing

AZ® IPS-6090 Positive Thick Resist   General Information AZ® IPS-6090 for 30 - 150 µm Resist Film Thickness (i-line) The chemically amplified AZ® IPS-6090 is, comparable to the AZ® 40XT, an ultra thick resist whose high viscosity allows very large resist film thicknesses via a single coating. It does not require rehydration, requires low light doses, releases no nitrogen during exposure, and develops very rapidly, thus permitting significantly shorter process times compared to standard thick resist films. However, the AZ® IPS-6090 necessarily requires a post exposure bake to be developed. It has been developed for use as patterning in semiconductors advanced packaging application (3DIC/TSV, CU Pillar, WLCSP, MEMS).   IPS 6050 (80 µm resist film thickness) Product Properties Very high resolution High aspect ratio Low exposure dose for the thickness of the film Straight pattern profile and footing free i-line sensitive, 330 – 390 nm Film thickness range: 30 - 150 µm Suited for applications such as electro chemical deposition / plating of Cu RDL in WLCSP process Electro chemical deposition / plating of Cu, Ni, Sn, SnAg, Au for 3DIC, FO and Flipchip processing Sacrificial layer for Si etching process in TSV Sacrificial layer for SiO2 or SiN etching process in CMOS sensor processing Developers We recommend AZ® 326 MIF Developer or AZ® 726 MIF Developer (this one contains surfactants) for the photoresist AZ® IPS-6090. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes, such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover or the TechniStrip P1331. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal AZ® EBR Solvent or PGMEA. AZ® EBR70/30 Solvent is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® IPS-6090 Photoresist english Sicherheitsdatenblatt AZ® IPS-6090 Fotolack german TDS: Technical Data Sheet AZ® IPS-6090 english Information AZ® IPS-6090 english Application Notes: Further Information about Photoresist Processing

AZ® nLOF 2020 Thick Negative Resist for Lift Off   General Information AZ® nLOF 2020 Photoresist for 2-10 µm Resist Film Thickness (i-line) The AZ® nLOF 2000 series is optimised with undercut resist profiles and high resistance to thermal flow for lift-off applications. The three viscosity grades AZ® nLOF 2020 (2.0 µm resist layer thickness at 4000 rpm), AZ® nLOF 2035 (3.5 µm) and AZ® nLOF 2070 (7.0 µm) cover a large resist layer thickness range with a high possible aspect ratio. A post exposure bake is obligatory to carry out the cross-linking initiated during exposure. Beside the resist types above, MicroChemicals dilutes the AZ® nLOF 2000 series to different thickness levels. 700 nm resist lines attained with the 2.0 µm thick AZ® nLOF 2020. Product Properties AZ® nLOF 2020 for film thickness 2.0 µm @ 3000 rpm i-line sensitive (365 nm), not g- or h-line sensitive Very high thermal stability: Almost no rounding of cross-linked resist patterns up to temperatures of 250°C and more. High chemical stability: Dependant on process parameters, AZ® nLOF 2000 series is stable against many organic solvents as well as strong alkaline media (however, not stable against KOH Si-etches!). The e-beam sensitivity of the AZ® nLOF 2000 series resists allows the combination of fast UV and high-resolution e-beam lithography. (Please contact us for further information!) Reproducible undercut for excellent lift off results High yield in industrial processes due to large process window Developers The recommended developer is the AZ® 2026 MIF which works best with AZ® nLof 2000 series. AZ® 326 MIF or AZ® 726 MIF are possible as well. KOH- or NaOH based developers or AZ® Developer will not give reasonable results. Only AZ® 303 Developer can be used in cases, where TMAH based developers are no option. Removers The recommended stripper for the AZ® nLOF 2000 series is the NMP-free TechniStrip NI555 or AZ® 910 Remover, which is compatible with all common (even alkaline sensitive) substrate materials and can even dissolve (not only peel from the substrate) cross-linked AZ® nLOF 2070 resist films. Solvents such as NMP or the untoxic substitute DMSO are suited removers, if the resist film thickness and degree of crosslinking are not too high. Generally, heating these removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten the resist removal in the case of very thick or strongly cross-linked resist films. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® nLOF2020 Photoresist english Sicherheitsdatenblatt AZ® nLOF2020 Fotolack german TDS: Technical Data Sheet AZ® nLOF2000 Series english Information AZ® nLOF2000 Series english Application Notes: Further Information about Photoresist Processing

AZ® nLOF 2035 Thick Negative Resist for Lift Off   General Information AZ® nLOF 2035 Photoresist for 3-5 µm Resist Film Thickness (i-line) The AZ® nLOF 2000 series is optimised with undercut resist profiles and high resistance to thermal flow for lift-off applications. The three viscosity grades AZ® nLOF 2020 (2.0 µm resist layer thickness at 4000 rpm), AZ® nLOF 2035 (3.5 µm) and AZ® nLOF 2070 (7.0 µm) cover a large resist layer thickness range with a high possible aspect ratio. A post exposure bake is obligatory to carry out the cross-linking initiated during exposure. Beside the resist types above, MicroChemicals dilutes the AZ® nLOF 2000 series to different thickness levels. 700 nm resist lines attained with the 3.5 µm thick AZ® nLOF 2035.* Product Properties AZ® nLOF 2035 for film thickness 3.5 µm @ 3000 rpm i-line sensitive (365 nm), not g- or h-line sensitive Very high thermal stability: Almost no rounding of cross-linked resist patterns up to temperatures of 250°C and more. High chemical stability: Dependant on process parameters, AZ® nLOF 2000 series is stable against many organic solvents as well as strong alkaline media (however, not stable against KOH Si-etches!). The e-beam sensitivity of the AZ® nLOF 2000 series resists allows the combination of fast UV and high-resolution e-beam lithography. (Please contact us for further information!) Reproducible undercut for excellent lift off results High yield in industrial processes due to large process window Developers The recommended developer is the AZ® 2026 MIF which works best with AZ® nLof 2000 series. AZ® 326 MIF or AZ® 726 MIF are possible as well. KOH- or NaOH based developers or AZ® Developer will not give reasonable results. Only AZ® 303 Developer can be used in cases, where TMAH based developers are no option. Removers The recommended stripper for the AZ® nLOF 2000 series is the NMP-free TechniStrip NI555 or AZ® 910 Remover, which is compatible with all common (even alkaline sensitive) substrate materials and can even dissolve (not only peel from the substrate) cross-linked AZ® nLOF 2070 resist films. Solvents such as NMP or the untoxic substitute DMSO are suited removers, if the resist film thickness and degree of crosslinking are not too high. Generally, heating these removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten the resist removal in the case of very thick or strongly cross-linked resist films. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® nLOF2035 Photoresist english Sicherheitsdatenblatt AZ® nLOF2035 Fotolack german TDS: Technical Data Sheet AZ® nLOF2000 Series english Information AZ® nLOF2000 Series english Application Notes: Further Information about Photoresist Processing

AZ® nLOF 2070 Thick Negative Resist for Lift Off   General Information AZ® nLOF 2070 Photoresist for 5-15 µm Resist Film Thickness (i-line) The AZ® nLOF 2000 series is optimised with undercut resist profiles and high resistance to thermal flow for lift-off applications. The three viscosity grades AZ® nLOF 2020 (2.0 µm resist layer thickness at 4000 rpm), AZ® nLOF 2035 (3.5 µm) and AZ® nLOF 2070 (7.0 µm) cover a large resist layer thickness range with a high possible aspect ratio. A post exposure bake is obligatory to carry out the cross-linking initiated during exposure. Beside the resist types above, MicroChemicals dilutes the AZ® nLOF 2000 series to different thickness levels. A pronounced undercut attained with the AZ® nLOF 2070 in a thickness of 22 µm. Product Properties AZ® nLOF 2070 for film thickness 7.0 µm @ 3000 rpm i-line sensitive (365 nm), not g- or h-line sensitive Very high thermal stability: Almost no rounding of cross-linked resist patterns up to temperatures of 250°C and more. High chemical stability: Dependant on process parameters, AZ® nLOF 2000 series is stable against many organic solvents as well as strong alkaline media (however, not stable against KOH Si-etches!). The e-beam sensitivity of the AZ® nLOF 2000 series resists allows the combination of fast UV and high-resolution e-beam lithography. (Please contact us for further information!) Reproducible undercut for excellent lift off results High yield in industrial processes due to large process window Developers The recommended developer is the AZ® 2026 MIF which works best with AZ® nLof 2000 series. AZ® 326 MIF or AZ® 726 MIF are possible as well. KOH- or NaOH based developers or AZ® Developer will not give reasonable results. Only AZ® 303 Developer can be used in cases, where TMAH based developers are no option. Removers The recommended stripper for the AZ® nLOF 2000 series is the NMP-free TechniStrip NI555 or AZ® 910 Remover, which is compatible with all common (even alkaline sensitive) substrate materials and can even dissolve (not only peel from the substrate) cross-linked AZ® nLOF 2070 resist films. Solvents such as NMP or the untoxic substitute DMSO are suited removers, if the resist film thickness and degree of crosslinking are not too high. Generally, heating these removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten the resist removal in the case of very thick or strongly cross-linked resist films. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® nLOF2070 Photoresist english Sicherheitsdatenblatt AZ® nLOF2070 Fotolack german TDS: Technical Data Sheet AZ® nLOF2000 Series english Information AZ® nLOF2000 Series english Application Notes: Further Information about Photoresist Processing

MC Dip Coating Resist for Dip Coating   General Information The MC Dip Coating Resist is a positive tone, ready-to-use (ready-diluted), low-cost resist, optimized for dip coating application with improved large-scale resist film thickness homogeneity. Product Properties MC Dip Coating Resist is a low-cost, ready-to-use (ready-diluted), positive tone resist optimized for dip coating with improved large-scale resist film thickness homogeneity. Its dye allows a fast and easy visual inspection on the coating performance. The attainable resist film thickness range is approx. 2 - 10 µm at a pull velocity of 3 - 15 mm/s. MC Dip Coating Resist contains two solvents: The low-boiling MEK causes a fast pre-drying of the resist film thus preventing resist flowing towards the bottom of the substrate (panels) to be coated. The high-boiling (= slowly evaporating) PGMEA yields a very smooth resist film surface. Dip Coating A pull velocity of 5 - 8 mm/s is recommended for a high coating homogeneity. Between the dip coating steps, it is recommended to cover the tank in order to prevent the evaporation of MEK and the incorporation of particles into the liquid resist. After coating, few minutes delay at room temperature will allow the resist film to smoothen. Developers We recommend the developers AZ® Developer, AZ® 400K and AZ® 351B also possible are simple NaOH, KOH and TMAH solutions. Resist Removal Alkaline strippers such as AZ® 100 Remover, or an approx. 3 % aqueous KOH- or NaOH-solution will work. Many organic solvents are also suited for photoresist removal. Further Information MSDS: Safety Data Sheet MC Dip Coating Resist english Sicherheitsdatenblatt MC Dip Coating Resist german TDS: Technical Data Sheet MC Dip Coating Resist english Application Notes: Further Information about Photoresist Processing

AZ® PL 177 Positive Thick Resist   General Information AZ® PL 177 is a positive tone liquid photoresist for the application in various coating techniques, especially for printed circuit boards manufacturing. AZ® PL 177 is dyed with a blue/violet colour for easy inspection after coating. It can be used for spin coating as well as for dip coating or for spray- or roller-coating. It is especially suited for wet chemical etching due to its outstanding adhesion properties and chemical stability. It is a general purpose resist and fits to all applications where high resolution and high thermal stability are not important. The AZ® PL 177 is a more inexpensive resist for lower demands regarding resolution and sidewall steepness. With a resist film thickness of approx. 5 µm at 4000 rpm, a resolution of approx. 4 - 5 µm is possible. Product Properties Good drying behaviour Aqueous-alkaline process ability PGMEA based formulation Very good adhesion properties to many types of substrates Blue/violet coloured for easy inspection Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents, or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range approx. 4 - 8 µm Developers As a developer, we recommend the NaOH-based AZ® 351B, the KOH-based AZ® 400K or TMAH-based devel¬oper such as the AZ® 2026 MIF. AZ Developer and even simple aqueous KOH or NaOH solutions can be used. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes, such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well in case of harsh treated or hard to remove resist residuals. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal AZ® EBR Solvent, PGMEA or MEK. AZ® EBR 70/30 Solvent is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® PL177 Photoresist english Sicherheitsdatenblatt AZ® PL177 Fotolack german TDS: Technical Data Sheet AZ® PL177 Photoresist english Application Notes: Further Information about Photoresist Processing

TI 35ESX Photoresist Image Reversal Resist   General Information The TI 35 ESX resist is specially designed for the application in the so called “image reversal technology” for: Subsequent lift-off of deposited layers with a thickness up to 4 µm Plasma etching The viscosity of the resist leads to a thickness range depending on the spin speed from 2.5 - 3.5 µm. The typical aspect ratio of the structured features achievable is in the range of 1.0 - 2.0. This technical data sheet intends to give you a guide-line for process parameters for various applications. However, the optimum values for e.g. spin profile, exposure dose or development depend on the individual equipment and need to be adjusted on each individual demand. Due to the required second exposure, the process sequence will be easier with a negative resist like **AZ® nLof 20xx series and could be a good alternative. Product Properties Possible negative sidewall profile in image reversal mode Compatible with all common developers (NaOH-, KOH- or TMAH-based) Compatible with all common strippers (e. g. with AZ® 100 Remover, organic solvents, or aqueous alkaline) g-, h- und i-line sensitive (approx. 320 - 440 nm) Resist film thickness range approx. 2.5 – 3.5 µm Developers We recommend the TMAH-based developers AZ® 726 MIF, AZ® 2026 MIF or AZ® 400K 1:4 based on buffered KOH. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents cab be used as stripper. If the resist film is crosslinked (e. g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the products AZ® EBR Solvent or PGMEA. Further Information MSDS: Safety Data Sheet TI 35ESX Photoresist english Sicherheitsdatenblatt TI 35ESX Fotolack german TDS: Technical Data Sheet TI 35ESX Photoresist english Application Notes: Further Information about Photoresist Processing

TI Spray Image Reversal Resist   General Information TI Spray for 1 - 20 µm Resist Film Thickness (g -, H - and I-line) TI Spray is a ready-to-use spray resist whose low content of low-boiling solvent allows a smooth resist surface at the expense of a somewhat smaller edge coverage by slow drying of the resist film formed (If edge coverage is of highest importance, the use of AZ® 4999 should be considered as a good alternative). It can be used in positive or in image-reversal (negative) mode. It can be used for wet chemical etching processes as well as for lift off applications. Product Properties Optimized resist adhesion to all common substrate materials Broad process parameter window for stable and reproducible litho-processes Compatible with all common strippers (e. g. with AZ® 100 Remover, organic solvents or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range approx. 1 - 20 µm Very smooth resist layers after spray coating on the price of lower edge coverage potential Developers If metal ion containing developers can be used, the KOH-based AZ® 400K in a 1:4 dilution (for higher resist film thicknesses 1:3.5 - 1:3 diluted possible) is a suited developer. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 2026 MIF developer (undiluted). Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents cab be used as stripper. If the resist film is crosslinked (e. g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the products AZ® EBR Solvent or PGMEA. Further Information MSDS: Safety Data Sheet TI Spray english Sicherheitsdatenblatt TI Spray german TDS: Technical Data Sheet TI Spray english Application Notes: Further Information about Photoresist Processing