AZ® 2026 MIF Developer Metal Ion-free Developers   General Information AZ® 300 MIF, AZ® 326 MIF, AZ® 726 MIF and AZ® 2026 MIF Developers are developer formulations with 2.38 % TMAH (tetramethylammoniumhydroxide) in H2O. The AZ® 726 MIF Developer contains additionally a surfactant for better wetting and easy to settle up of puddle development. Additionally to the wetting agent of the AZ® 726 MIF the AZ® 2026 MIF contains a scum remover for complete and scum-free removal of resist layers on the price of a slightly higher dark erosion ratio. However, for our negative resists, such as AZ® nLof 2000 series, AZ® 15nXT series, AZ® 125nXT resists this developer shows outstanding performance. Even for a positive resist like AZ® 10XT resist it significantly reduces t-topping if this problem occurs. AZ® 2033 MIF is 3.00 % TMAH in H2O with surfactants added for fast and homogeneous substrate wetting and further additives for removal of resist residuals (residues in certain lacquer families), but at the cost of a higher dark removal. Compared to the AZ® 2026 MIF, the normality is not 0.26 but 0.33. Thus the development rate is higher with the AZ® 2033 MIF Developer. Further Information MSDS: Safety Data Sheet AZ® 2026 MIF Developer english Sicherheitsdatenblatt AZ® 2026 MIF Developer deutsch TDS: Technical Data Sheet AZ® 2026 MIF Developer english Application Notes: Development of Photoresist english Entwicklung von Fotolack deutsch

AZ® 2033 MIF Developer Metal Ion-free Developers   General Information AZ® 300 MIF, AZ® 326 MIF, AZ® 726 MIF and AZ® 2026 MIF Developers are developer formulations with 2.38 % TMAH (tetramethylammoniumhydroxide) in H2O. The AZ® 726 MIF Developer contains additionally a surfactant for better wetting and easy to settle up of puddle development. Additionally to the wetting agent of the AZ® 726 MIF the AZ® 2026 MIF contains a scum remover for complete and scum-free removal of resist layers on the price of a slightly higher dark erosion ratio. However, for our negative resists, such as AZ® nLof 2000 series, AZ® 15nXT series, AZ® 125nXT resists this developer shows outstanding performance. Even for a positive resist like AZ® 10XT resist it significantly reduces t-topping if this problem occurs. AZ® 2033 MIF is 3.00 % TMAH in H2O with surfactants added for fast and homogeneous substrate wetting and further additives for removal of resist residuals (residues in certain lacquer families), but at the cost of a higher dark removal. Compared to the AZ® 2026 MIF, the normality is not 0.26 but 0.33. Thus the development rate is higher with the AZ® 2033 MIF Developer. Further Information MSDS: Safety Data Sheet AZ® 2033 MIF Developer english Sicherheitsdatenblatt AZ® 2033 MIF Entwickler german TDS: Technical Data Sheet AZ® 2033 MIF Developer english Application Notes: Development of Photoresist english Entwicklung von Fotolack german

AZ® 300 MIF Developer Metal Ion-free Developers   General Information AZ® 300 MIF, AZ® 326 MIF, AZ® 726 MIF and AZ® 2026 MIF Developers are developer formulations with 2.38 % TMAH (tetramethylammoniumhydroxide) in H2O. The AZ® 726 MIF Developer contains additionally a surfactant for better wetting and easy to settle up of puddle development. Additionally to the wetting agent of the AZ® 726 MIF the AZ® 2026 MIF contains a scum remover for complete and scum-free removal of resist layers on the price of a slightly higher dark erosion ratio. However, for our negative resists, such as AZ® nLof 2000 series, AZ® 15nXT series, AZ® 125nXT resists this developer shows outstanding performance. Even for a positive resist like AZ® 10XT resist it significantly reduces t-topping if this problem occurs. AZ® 2033 MIF is 3.00 % TMAH in H2O with surfactants added for fast and homogeneous substrate wetting and further additives for removal of resist residuals (residues in certain lacquer families), but at the cost of a higher dark removal. Compared to the AZ® 2026 MIF, the normality is not 0.26 but 0.33. Thus the development rate is higher with the AZ® 2033 MIF Developer. Further Information MSDS: Safety Data Sheet AZ® 300 MIF Developer english Sicherheitsdatenblatt AZ® 300 MIF Entwickler german TDS: Technical Data Sheet AZ® 300 MIF Developer english Application Notes: Development of Photoresist english Entwicklung von Fotolack german

AZ® 303 Developer Inorganic Developers   General Information AZ® 303 MIC is a KOH and NaOH based developer for positive and negative resists. Product Features AZ® 303 Developer is based on an aqueous KOH and NaOH solution and contains strong surfactants. It is compatible with positive and negative resists and is therefore suitable, for example, as the only non-TMAH-based developer for the AZ® nLOF 2000 series. AZ® 303 Developer is usually used diluted 1: 5 - 1:10 with water.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® 303 Developer english Safety Data Sheet AZ ® 303 Entwickler german TDS: Technical Data Sheet AZ® 303 Developer english Application Notes: Development of Photoresist english Development of Photoresist german

AZ® 326 MIF Developer Metal Ion-free Developer   General Information AZ® 326 MIF is a TMAH-based developer for dip or spray development, compatible with all AZ®</sup photoresists from our portfolio. Product Features The ready-to-use AZ® 326 MIF developer is an aqueous 2.38% TMAH solution without any additives. This makes it suitable for dip or spray development, but less for puddle development, for which the AZ® 726 MIF developer is the better choice due to its special surfactant for substrate wetting. TMAH-based developers are always used when development must be carried out metal ion free. In addition, TMAH- based developers are primarily recommended for our chemically amplified positive resists and our negative resists. For very thin resist layers (< 1 µm) or very high resolution requirements, it can be useful to dilute the AZ® 326 MIF with water (AZ® 326 MIF : water = 2:1 to a maximum of 1:1). AZ® 326 MIF attacks aluminum with an etching rate of approx. 70 nm/min. If this cannot be tolerated, the Al-compatible AZ® Developer is an alternative, which, however, is based on sodium compounds and is therefore not metal ion-free. For standard (non chemically amplified), DNQ-based positive resists without the requirement of metal ion-free development, a KOH- or NaOH-based developer such as AZ® 400K or AZ® 351B can be considered instead of a TMAH-based developer for cost reasons. For cross-linking negative resists, AZ® 2026 MIF can prove advantageous, which promotes residue-free development with these resists through certain additives.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® 326 MIF Developer english Safety Data Sheet AZ® 326 MIF Entwickler german TDS: Technical Data Sheet AZ® 326 MIF Developer english Application Notes: Development of Photoresist english Development of Photoresist german

AZ® 340 Developer Inorganic Developers   General Information AZ® 340 Developer is a high normality sodium based developer concentrate for use in on-site custom dilution applications. This developer concentrate is buffered for extended bath life and stable develop rates in batch processes. Dilute using 1 part AZ® 340 Developer to 4 parts DI water for high contrast processing. Developer normality (and develop rate) may be increased as required by increasing the AZ® 340 Developer to water ratio. Further Information MSDS: Safety Data Sheet AZ® 340 Developer english Sicherheitsdatenblatt AZ® 340 Developer german TDS: Technical Data Sheet AZ® 340 Developer english Application Notes: Development of Photoresist english Entwicklung von Fotolack german

AZ® 351B Developer Inorganic Developers   General Information AZ® 351B Developer is a boric acid buffered, NaOH-based developer for non-chemically amplified positive resists. Product Features AZ® 351B Developer is a NaOH-based developer, particularly suitable for developing non-chemically amplified positive resists with layer thicknesses of a few µm. AZ® 351B Developer comes as a concentrate and is usually diluted 1: 4 with water. To increase selectivity, a 1: 5 - 1:6 dilution can also be applied, but this significantly reduces the development rate and is therefore not a reasonable option for thicker resist films. If the requirements for steep resist sidewalls are low, the AZ® 351B can also be set stronger (1:3.5 - 1:3) if higher development rates are required , but this leads to a disproportionate increase in dark erosion. AZ® 351B is less suitable for negative resists or chemically amplified positive resists; TMAH-based developers such as the AZ® 326 MIF, AZ® 726 MIF or AZ® 2026 MIF are recommended here. AZ® 351B attacks aluminum with an etching rate of - depending on the concentration of the developer dilution - several 10 nm/min to over 100 nm/min. If this cannot be tolerated, the Al-compatible AZ® Developer can be an alternative.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® 351B Developer english Safety Data Sheet AZ® 351B Entwickler german TDS: Technical Data Sheet AZ® 351B Developer english Application Notes: Development of Photoresist english Development of Photoresist german

AZ® 400K Developer 1:4 Inorganic Developers   General Information In addition to the concentrate, a pre-diluted AZ® 400K 1:4 version is now also available, other dilution ratios on request. AZ® 400K MIC Developer is based on buffered KOH and typically used in a 1:3 to 1:4 dilution (1 part of concentrate and 4 parts of DI-water) and can be used especially for our thicker resist types, such as AZ® 4562, AZ® 10XT, and AZ® 40XT. Further Information MSDS: Safety Data Sheet AZ® 400K 1:4 Developer english Sicherheitsdatenblatt AZ® 400K 1:4 Entwickler german TDS: Technical Data Sheet AZ® 400K 1:4 Developer english Information AZ® 400K 1:4 Developer english Application Notes: Development of Photoresist english Entwicklung von Fotolack german

AZ® 400K Developer Inorganic Developers   General Information AZ® 400K MIC is based on buffered KOH and typically used in a 1:3 to 1:4 dilution (1 part of concentrate and 4 parts of DI-water) and can be used especially for our thicker resist types, such as AZ® 4562, AZ® 10XT, and AZ® 40XT. In addition to the concentrate, a pre-diluted AZ® 400K 1:4 version is now also available, other dilution ratios on request. Further Information MSDS: Safety Data Sheet AZ® 400K Developer english Sicherheitsdatenblatt AZ® 400K Entwickler german TDS: Technical Data Sheet AZ® 400K Developer english Information AZ® 400K Developer english Application Notes: Development of Photoresist english Entwicklung von Fotolack german

AZ® 726 MIF Developer Metal Ion-free Developers   General Information AZ® 300 MIF, AZ® 326 MIF, AZ® 726 MIF and AZ® 2026 MIF Developers are developer formulations with 2.38 % TMAH (tetramethylammoniumhydroxide) in H2O. The AZ® 726 MIF Developer contains additionally a surfactant for better wetting and easy to settle up of puddle development. Additionally to the wetting agent of the AZ® 726 MIF the AZ® 2026 MIF contains a scum remover for complete and scum-free removal of resist layers on the price of a slightly higher dark erosion ratio. However, for our negative resists, such as AZ® nLof 2000 series, AZ® 15nXT series, AZ® 125nXT resists this developer shows outstanding performance. Even for a positive resist like AZ® 10XT resist it significantly reduces t-topping if this problem occurs. AZ® 2033 MIF is 3.00 % TMAH in H2O with surfactants added for fast and homogeneous substrate wetting and further additives for removal of resist residuals (residues in certain lacquer families), but at the cost of a higher dark removal. Compared to the AZ® 2026 MIF, the normality is not 0.26 but 0.33. Thus the development rate is higher with the AZ® 2033 MIF Developer. Further Information MSDS: Safety Data Sheet AZ® 726MIF Developer english Sicherheitsdatenblatt AZ® 726MIF Entwickler german TDS: Technical Data Sheet AZ® 726MIF Developer english Application Notes: Development of Photoresist english Entwicklung von Fotolack german

AZ® Developer Inorganic Developers   General Information AZ® Developer is optimized for minimum Al attack. It is an odourless, aqueous, inorganic, alkaline solution, which is compatible with batch and in-line developing processes. It is typically applied 1:1 diluted in DI-H2O for high contrast, or undiluted for a high development rate. The dark erosion of AZ® Developer is slightly higher as compared to other developers. AZ® Developer can be used in combination with most families of AZ® Photoresists (i.e. AZ® 1500, AZ® ECI3000 and AZ® 4500 or AZ® PL177). AZ® Developer displays the lowest aluminium etch rate (it is more or less zero!) of all AZ® Developer - types and is ideal for metal levels. Further Information MSDS: Safety Data Sheet AZ® Developer english Sicherheitsdatenblatt AZ® Developer german TDS: Technical Data Sheet AZ® Developer english Application Notes: Development of Photoresist english Entwicklung von Fotolack german

AZ® Developer 1:1 Inorganic Developers   General Information AZ® Developer 1:1 is a ready-to-use product and is a 1:1 dilution of AZ Developer. The developer is optimized for minimum Al attack. It is an odourless, aqueous, inorganic, alkaline solution, which is compatible with batch and in-line developing processes. AZ® Developer 1:1 is for high contrast. The dark erosion of AZ® Developer 1:1 is slightly higher as compared to other developers. AZ® Developer 1:1 can be used in combination with most families of AZ® Photoresists (i.e. AZ® 1500, AZ® ECI3000 and AZ® 4500 or AZ® PL177). AZ® Developer 1:1 displays the lowest aluminium etch rate (it is more or less zero!) of all AZ® Developer 1:1 types and is ideal for metal levels. Further Information MSDS: Safety Data Sheet AZ® Developer 1:1 english Sicherheitsdatenblatt AZ® Developer 1:1 german TDS: Technical Data Sheet AZ® Developer 1:1 english Application Notes: Development of Photoresist english Entwicklung von Fotolack german