AZ® 100 Remover Universal Photoresist Stripper   General Information AZ®100 Remover is based on solvent and amine (alkaline). AZ®100 Remover is used for photoresist stripping with low attack to aluminium. Low hazard is achieved by the use of ethanol amine. Low evaporation rate allows the use at elevated temperatures (up to 80°C), high efficiency (>3000 wafer per litre) helps saving costs. Where attack to aluminium is of no concern, it may even be diluted with water. AZ®100 Remover is not compatible with AZ® nLof 2070 (AZ® nLof 2000 series) resists and other heavily cross linked resists. Product Properties Density (at 25°C): 0.955 kg/l Color (Alpha): max. 20 Flashpoint (AP): 72°C Normality (potentiometric): 3.1 mol/l Boiling range: 159-194°C Further Information MSDS: Safety Data Sheet AZ® 100 Remover english Sicherheitsdatenblatt AZ® 100 Remover german TDS: Technical Data Sheet AZ® 100 Remover english Application Notes: Photoresist removal english Fotolack entfernen german

AZ® 10XT (220CPS) Thick Resists for High Resolution   General Information Compared to the AZ® 4500 series, the AZ® 10XT resists have a lower optical absorption. This simplifies the exposure of (also very) thick resist films. Therefore, in combination with the missing g-line sensitivity, the AZ® 10XT series needs a higher exposure time under broadband condition, and reveals a lower development rate as compared to AZ® 4500 films processed under the same conditions. On the other hand, the AZ® 10XT shows a very high aspect ratio and resolution. For lower resist film thicknesses we recommend a dilution with PGMEA = AZ® EBR Solvent. The following resist film thicknesses refer to 4000 rpm under standard conditions: 4.0 µm: 100g AZ® 10XT + 13g PGMEA 3.0 µm: 100g AZ® 10XT + 23g PGMEA 2.0 µm: 100g AZ® 10XT + 42g PGMEA 1.5 µm: 100g AZ® 10XT + 55g PGMEA 1.0 µm: 100g AZ® 10XT + 88g PGMEA The AZ® 10XT is a PFOS-free alternative to the AZ® 9260, which was discontinued in 2019. Viscosity and process parameters are identical to the former AZ® 9260.   3.0 µm lines in 12 µm thick AZ® 10XT Ultratech 1500 Exposure, AZ® 400K Developer 1:4 (260s spray)   Product Properties Good resist adhesion to all common substrate materials Compatible with all common developers (KOH- or TMAH-based) Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline) h- and i-line sensitive (approx. 320 - 410 nm) Resist film thickness range approx. 5 - 30 µm Developers The recommended developers for the AZ® 10XT photoresist are AZ® 400K 1:4 or AZ® 726 MIF. In case of very thick resist films, a rather strong developer concentration such as AZ® 400K 1:3.5 - 1:3.0 might be reasonable for required short development times. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals. Thinning/ Edge Bead Removal We recommend for thinning the AZ® EBR Solvent. Further Information MSDS: Safety Data Sheet AZ® 10XT (220cps) english Sicherheitsdatenblatt AZ® 10XT (220cps) german TDS: Technical Data Sheet AZ® 10XT (220cps) english Application Notes: Further Information about Photoresist Processing

AZ® 10XT (520CPS) Thick Resists for High Resolution   General Information Compared to the AZ® 4500 series, the AZ® 10XT resists have a lower optical absorption. This simplifies the exposure of (also very) thick resist films. Therefore, in combination with the missing g-line sensitivity, the AZ® 10XT series needs a higher exposure time under broadband condition, and reveals a lower development rate as compared to AZ® 4500 films processed under the same conditions. On the other hand, the AZ® 10XT shows a very high aspect ratio and resolution. For lower resist film thicknesses we recommend a dilution with PGMEA = AZ® EBR Solvent. The following resist film thicknesses refer to 4000 rpm under standard conditions: 4.0 µm: 100g AZ® 10XT + 13g PGMEA 3.0 µm: 100g AZ® 10XT + 23g PGMEA 2.0 µm: 100g AZ® 10XT + 42g PGMEA 1.5 µm: 100g AZ® 10XT + 55g PGMEA 1.0 µm: 100g AZ® 10XT + 88g PGMEA The AZ® 10XT is a PFOS-free alternative to the AZ® 9260, which was discontinued in 2019. Viscosity and process parameters are identical to the former AZ® 9260.   3.0 µm lines in 12 µm thick AZ® 10XT Ultratech 1500 Exposure, AZ® 400K Developer 1:4 (260s spray)   Product Properties Good resist adhesion to all common substrate materials Compatible with all common developers (KOH- or TMAH-based) Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline) h- and i-line sensitive (approx. 320 - 410 nm) Resist film thickness range approx. 5 - 30 µm Developers The recommended developers for the AZ® 10XT photoresist are AZ® 400K 1:4 or AZ® 726 MIF. In case of very thick resist films, a rather strong developer concentration such as AZ® 400K 1:3.5 - 1:3.0 might be reasonable for required short development times. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals. Thinning/ Edge Bead Removal We recommend for thinning the AZ® EBR Solvent. Further Information MSDS: Safety Data Sheet AZ® 10XT (520cps) english Sicherheitsdatenblatt AZ® 10XT (520cps) german TDS: Technical Data Sheet AZ® 10XT (520cps) english Application Notes: Further Information about Photoresist Processing

AZ® 125nXT-10B Ultra-Thick Negative Resist for Plating   General Information AZ® 125nXT-10B for 25 - 200 µm Resist Film Thickness (i-line) The AZ® 125nXT-10B is a negative resist for film thicknesses up to over 100 µm with at the same time very high sidewall steepness. And even more (1 mm resist film thickness realized!) with very steep sidewalls and special coating techniques It’s cross-linking and very good resist adhesion make it stable in all conventional electroplating applications. This resist does not require a post exposure bake. 20 µm lines at 60 µm resist film thickness. 15 µm holes at 60 µm resist film thickness. 80 µm plated CuNi image. Product Properties 30 – 100 µm resist film thickness via single-coating Up to 1 mm resist film thickness possible Aqueous alkaline developers (e. g. AZ® 326/726/2026 MIF) No post exposure bake, photo-polymerization during exposure No rehydration required, no N2-formation during exposure Very good adhesion, no underplating Wet stripping processes (e. g. TechniStrip P1316) Optimized for electroplating, wet- and dry etching Developers We recommend the TMAH-based, ready-to-use AZ® 2026 MIF Developer. AZ® 326 MIF and AZ® 726 MIF are possible as well. Removers The recommended stripper for the AZ® 125nXT-10B is the NMP-free TechniStrip P1316, in case of alkaline sensitive substrate materials use the TechniStrip P1331 or TechniStrip MLO07. Solvents such as NMP or the untoxic substitute DMSO are suited removers, if the resist film thickness and degree of cross-linking are not too high. Generally, heating the removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten the resist removal in the case of very thick resist films. Resist pattern and plated structures attained with a 60 and 120 µm thick AZ® 125nXT. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the products AZ® EBR Solvent or AZ® EBR Solvent 70/30. Further Information MSDS: Safety Data Sheet AZ® 125nXT-10B english Sicherheitsdatenblatt AZ® 125nXT-10B german TDS: Technical Data Sheet AZ® 125nXT-10B english Application Notes: Further Information about Photoresist Processing

AZ® 12XT-20PL-10 Chemically Amplified Positive Tone Photoresists   General Information AZ® 12XT for 5 - 15 µm Resist Film Thickness (i-line) The AZ® 12XT is a chemically amplified thick positive resist with superior photospeed and aspect ratio characterized by its excellent environmental stability and suitability for plating and RIE etc applications. Even for very high resist film thickness AZ® 12XT requires only short softbake times, no delay for rehydration, very small exposure doses due to its chemical amplification and reveals a high development rate.   AZ® 12XT - 2.4mm lines at 10mm film thickness Product Properties High thermal stability Compatible with all common TMAH based developers Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents, or aqueous alkaline) i-line sensitive (approx. 320 - 390 nm) Resist film thickness range approx. 5 - 20 µm Developers We recommend the TMAH-based developers such as the AZ® 326 MIF, AZ® 726 MIF or AZ® 2026 MIF developer. Removers The AZ® 12XT resists are compatible with industry standard solvent based removers such as AZ® 920 Remover, AZ® 100 Remover and DMSO based strippers. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal AZ® EBR Solvent or AZ® EBR70/30 Solvent. Further Information MSDS: Safety Data Sheet AZ® 12XT 20PL-10 english Sicherheitsdatenblatt AZ® 12XT 20PL-10 german TDS: Technical Data Sheet AZ® 12XT 20PL-10 english Application Notes: Further Information about Photoresist Processing

AZ® 12XT-20PL-15 Chemically Amplified Positive Tone Photoresists   General Information AZ® 12XT for 5 - 15 µm Resist Film Thickness (i-line)The AZ® 12XT is a chemically amplified thick positive resist with superior photospeed and aspect ratio characterized by its excellent environmental stability and suitability for plating and RIE etc applications. Even for very high resist film thickness AZ® 12XT requires only short softbake times, no delay for rehydration, very small exposure doses due to its chemical amplification and reveals a high development rate.   AZ® 12XT - 2.4mm lines at 10mm film thickness Product Properties High thermal stability Compatible with all common TMAH based developers Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents, or aqueous alkaline) i-line sensitive (approx. 320 - 390 nm) Resist film thickness range approx. 5 - 20 µm Developers We recommend the TMAH-based developers such as the AZ® 326 MIF, AZ® 726 MIF or AZ® 2026 MIF developer. Removers The AZ® 12XT resists are compatible with industry standard solvent based removers such as AZ® 920 Remover, AZ® 100 Remover and DMSO based strippers. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal AZ® EBR Solvent or AZ® EBR70/30 Solvent. Further Information MSDS: Safety Data Sheet AZ® 12XT 20PL-15 english Sicherheitsdatenblatt AZ® 12XT 20PL-15 german TDS: Technical Data Sheet AZ® 12XT 20PL-15 english Application Notes: Further Information about Photoresist Processing

AZ® 1505 Positive Thin Resists for Wet Etching   General Information The AZ® 1500 photoresist series yields an improved adhesion for all common wet etching processes. The lateral resolution depends on the resist film thickness and reaches down to sub-µm. The high resolution and adhesion of the AZ® 1505 make this resist a commonly used resist mask for Cr etching in photo mask production. At 4000 rpm, a coating thickness of approx. 500 nm can be attained. A coating thickness of approx. 400 - 800 nm can also be achieved by varying the spin speed. Product Properties Improved resist adhesion to all common substrate materials Broad process parameter window for stable and reproducible litho-processes High development rate Compatible with all common developers (NaOH-, KOH- or TMAH-based) Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range approx. 0.4 – 0.8 µm Developers If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based **AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent. Further Information MSDS: Safety Data Sheet AZ® 1505 Photoresist english Sicherheitsdatenblatt AZ® 1505 Fotolack german TDS: Technical Data Sheet AZ® 1505 Photoresist english Application Notes: Further Information about Photoresist Processing

AZ® 1512 HS Positive Thin Resists for Wet Etching   General Information The AZ® 1500 photoresist series yields an improved adhesion for all common wet etching processes. The lateral resolution depends on the resist film thickness and reaches down to sub-µm. The very high photo active compound concentration of the AZ® 1512 HS maximises the resist contrast (very high development rate, minimized dark erosion). At 4000 rpm, a coating thickness of approx. 1.2 µm can be attained. A coating thickness of approx. 1.0 – 1.8 µm can also be achieved by varying the spin speed. Product Properties Improved resist adhesion to all common substrate materials Broad process parameter window for stable and reproducible litho-processes High development rate Compatible with all common developers (NaOH-, KOH- or TMAH-based) Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range approx. 1.0 – 1.8 µm Developers If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF** developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent. Further Information MSDS: Safety Data Sheet AZ® 1512 HS Photoresist english Sicherheitsdatenblatt AZ® 1512 HS Fotolack german TDS: Technical Data Sheet AZ® 1512 HS Photoresist english Application Notes: Further Information about Photoresist Processing

AZ® 1514H Positive Thin Resists for Wet Etching   General Information The AZ® 1500 photoresist series yields an improved adhesion for all common wet etching processes. The lateral resolution depends on the resist film thickness and reaches down to sub-µm. A special resin further improves the resist adhesion on most common (metallic) substrates. Resist film thickness at 4000 rpm approx. 1.4 µm, via variations of the spin speed approx. 1.1 - 2 µm attainable. Product Properties Improved resist adhesion to all common substrate materials Broad process parameter window for stable and reproducible litho-processes High development rate Compatible with all common developers (NaOH-, KOH- or TMAH-based) Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents, or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range approx. 1.1 µm – 2.0 µm Developers If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based **AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent. Further Information MSDS: Safety Data Sheet AZ® 1514 H Photoresist english Sicherheitsdatenblatt AZ® 1514 H Fotolack german TDS: Technical Data Sheet AZ® 1514 H Photoresist english Application Notes: Further Information about Photoresist Processing

AZ® 1518 Positive Thin Resists for Wet Etching   General Information The AZ® 1500 photoresist series yields an improved adhesion for all common wet etching processes. The lateral resolution depends on the resist film thickness and reaches down to sub-µm. The elevated resist film thickness of the AZ® 1518 improve the stability of the resist mask for wet etching processes. At 4000 rpm, a coating thickness of approx. 1.8 µm can be attained. A coating thickness of approx. 1.5 – 3.0 µm can also be achieved by varying the spin speed. Product Properties Improved resist adhesion to all common substrate materials Broad process parameter window for stable and reproducible litho-processes High development rate Compatible with all common developers (NaOH-, KOH- or TMAH-based) Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range approx. 1.5 µm – 3.0 µm Developers If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent. Further Information MSDS: Safety Data Sheet AZ® 1518 Photoresist english Sicherheitsdatenblatt AZ® 1518 Fotolack german TDS: Technical Data Sheet AZ® 1518 Photoresist english Application Notes: Further Information about Photoresist Processing

AZ® 15nXT (115CPS) Thick Negative Resist for Plating   General Information AZ® 15nXT (115CPS) for 3 - 6 µm Resist Film Thickness (i-line) The AZ® 15nXT (115CPS) is a negative resist for film thicknesses up to approx. 6 µm, with a resist film thickness of 3.5 µm at 4000 rpm. Its cross-linking character and its very good resist adhesion make it stable, for example, for all conventional electroplating applications. Up to about 6 µm resist film thickness, the resist sidewalls are vertical, with larger film thicknesses, increasingly negative (undercut) so that the moulded metal structures taper towards the top. A post exposure bake is obligatory to carry out the cross-linking initiated during exposure. 5 µm lines at 10 µm resist film thickness. 5 µm holes at 10 µm resist film thickness. 5 µm plated CuNi image. 3.6 µm plated CuNi image. Product Properties 3 - 6 µm resist film thickness via single-coating Aqueous alkaline developers, preferably AZ® 2026 MIF Excellent adhesion, no underplating Wide substrate compatibility: Cu, Au, Ti, NiFe, … Wide plating compatibility: Cu, Ni, Au, … Standard wet stripping processes Almost vertical sidewall angles Developers We recommend the TMAH-based, ready-to-use AZ® 2026 MIF Developer. AZ® 326 MIF and AZ® 726 MIF are possible as well. Removers The recommended stripper for the AZ® 15nXT is the NMP-free, nontoxic TechniStrip NI555 or the AZ® 910 Remover, which is compatible with all common (even alkaline sensitive) substrate materials and can even dissolve (not only peel from the substrate) cross linked AZ® 15nXT resist films. Solvents such as NMP or the nontoxic substitute DMSO are suited removers, if the resist film thickness and degree of crosslinking are not too high. Generally, heating these removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten the resist removal in the case of very thick or strongly crosslinked resist films. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the products AZ® EBR Solvent or PGMEA. Further Information MSDS: Safety Data Sheet AZ® 15nXT (115CPS) Photoresist english Sicherheitsdatenblatt AZ® 15nXT (115CPS) Fotolack german TDS: Technical Data Sheet AZ® 15nXT (115CPS) Photoresist english Technical Data Sheet AZ® 15nXT Series english Application Notes: Further Information about Photoresist Processing

AZ® 15nXT (450CPS) Thick Negative Resist for Plating   General Information AZ® 15nXT (450CPS) for 5 - 20 µm Resist Film Thickness (i-line) The AZ® 15nXT (450CPS) is a negative resist for film thicknesses up to approx. 20 µm, with a resist film thickness of ~ 6 µm at 4000 rpm. Its cross-linking character and its very good resist adhesion make it stable, for example, for all conventional electroplating applications. Up to about 10 µm resist film thickness, the resist sidewalls are vertical, with larger film thicknesses, increasingly negative (undercut) so that the moulded metal structures taper towards the top. A post exposure bake is obligatory to carry out the cross-linking initiated during exposure. 5 µm lines at 10 µm resist film thickness. 5 µm holes at 10 µm resist film thickness. 5 µm plated CuNi image. 3.6 µm plated CuNi image. Product Properties 5 - 20 µm resist film thickness via single-coating Aqueous alkaline developers, preferably AZ® 2026 MIF Excellent adhesion, no underplating Wide substrate compatibility: Cu, Au, Ti, NiFe, … Wide plating compatibility: Cu, Ni, Au, … Standard wet stripping processes Almost vertical sidewall angles Developers We recommend the TMAH-based, ready-to-use AZ® 2026 MIF Developer. AZ® 326 MIF and AZ® 726 MIF are possible as well. Removers The recommended stripper for the AZ® 15nXT is the NMP-free, nontoxic TechniStrip NI555 or the AZ® 910 Remover, which is compatible with all common (even alkaline sensitive) substrate materials and can even dissolve (not only peel from the substrate) cross-linked AZ® 15nXT resist films. Solvents such as NMP or the nontoxic substitute DMSO are suited removers, if the resist film thickness and degree of cross-linking are not too high. Generally, heating these removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten the resist removal in the case of very thick or strongly cross-linked resist films. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the products AZ® EBR Solvent or PGMEA. Further Information MSDS: Safety Data Sheet AZ® 15nXT (450CPS) Photoresist english Sicherheitsdatenblatt AZ® 15nXT (450CPS) Fotolack german TDS: Technical Data Sheet AZ® 15nXT (450CPS) Photoresist english Technical Data Sheet AZ® 15nXT Series english Information AZ® 15nXT (450CPS) Photoresist english Application Notes: Further Information about Photoresist Processing

AZ® 2026 MIF Developer Metal Ion-free Developers   General Information AZ® 300 MIF, AZ® 326 MIF, AZ® 726 MIF and AZ® 2026 MIF Developers are developer formulations with 2.38 % TMAH (tetramethylammoniumhydroxide) in H2O. The AZ® 726 MIF Developer contains additionally a surfactant for better wetting and easy to settle up of puddle development. Additionally to the wetting agent of the AZ® 726 MIF the AZ® 2026 MIF contains a scum remover for complete and scum-free removal of resist layers on the price of a slightly higher dark erosion ratio. However, for our negative resists, such as AZ® nLof 2000 series, AZ® 15nXT series, AZ® 125nXT resists this developer shows outstanding performance. Even for a positive resist like AZ® 10XT resist it significantly reduces t-topping if this problem occurs. AZ® 2033 MIF is 3.00 % TMAH in H2O with surfactants added for fast and homogeneous substrate wetting and further additives for removal of resist residuals (residues in certain lacquer families), but at the cost of a higher dark removal. Compared to the AZ® 2026 MIF, the normality is not 0.26 but 0.33. Thus the development rate is higher with the AZ® 2033 MIF Developer. Further Information MSDS: Safety Data Sheet AZ® 2026 MIF Developer english Sicherheitsdatenblatt AZ® 2026 MIF Developer deutsch TDS: Technical Data Sheet AZ® 2026 MIF Developer english Application Notes: Development of Photoresist english Entwicklung von Fotolack deutsch

AZ® 2033 MIF Developer Metal Ion-free Developers   General Information AZ® 300 MIF, AZ® 326 MIF, AZ® 726 MIF and AZ® 2026 MIF Developers are developer formulations with 2.38 % TMAH (tetramethylammoniumhydroxide) in H2O. The AZ® 726 MIF Developer contains additionally a surfactant for better wetting and easy to settle up of puddle development. Additionally to the wetting agent of the AZ® 726 MIF the AZ® 2026 MIF contains a scum remover for complete and scum-free removal of resist layers on the price of a slightly higher dark erosion ratio. However, for our negative resists, such as AZ® nLof 2000 series, AZ® 15nXT series, AZ® 125nXT resists this developer shows outstanding performance. Even for a positive resist like AZ® 10XT resist it significantly reduces t-topping if this problem occurs. AZ® 2033 MIF is 3.00 % TMAH in H2O with surfactants added for fast and homogeneous substrate wetting and further additives for removal of resist residuals (residues in certain lacquer families), but at the cost of a higher dark removal. Compared to the AZ® 2026 MIF, the normality is not 0.26 but 0.33. Thus the development rate is higher with the AZ® 2033 MIF Developer. Further Information MSDS: Safety Data Sheet AZ® 2033 MIF Developer english Sicherheitsdatenblatt AZ® 2033 MIF Entwickler german TDS: Technical Data Sheet AZ® 2033 MIF Developer english Application Notes: Development of Photoresist english Entwicklung von Fotolack german

AZ® 300 MIF Developer Metal Ion-free Developers   General Information AZ® 300 MIF, AZ® 326 MIF, AZ® 726 MIF and AZ® 2026 MIF Developers are developer formulations with 2.38 % TMAH (tetramethylammoniumhydroxide) in H2O. The AZ® 726 MIF Developer contains additionally a surfactant for better wetting and easy to settle up of puddle development. Additionally to the wetting agent of the AZ® 726 MIF the AZ® 2026 MIF contains a scum remover for complete and scum-free removal of resist layers on the price of a slightly higher dark erosion ratio. However, for our negative resists, such as AZ® nLof 2000 series, AZ® 15nXT series, AZ® 125nXT resists this developer shows outstanding performance. Even for a positive resist like AZ® 10XT resist it significantly reduces t-topping if this problem occurs. AZ® 2033 MIF is 3.00 % TMAH in H2O with surfactants added for fast and homogeneous substrate wetting and further additives for removal of resist residuals (residues in certain lacquer families), but at the cost of a higher dark removal. Compared to the AZ® 2026 MIF, the normality is not 0.26 but 0.33. Thus the development rate is higher with the AZ® 2033 MIF Developer. Further Information MSDS: Safety Data Sheet AZ® 300 MIF Developer english Sicherheitsdatenblatt AZ® 300 MIF Entwickler german TDS: Technical Data Sheet AZ® 300 MIF Developer english Application Notes: Development of Photoresist english Entwicklung von Fotolack german

AZ® 303 Developer Inorganic Developers   General Information AZ® 303 MIC is based on KOH and NaOH and contains strong surfactants. It is designed for positive and aqueous alkaline compatible negative resists, it can be used for AZ® nLof 20XX series resists as well and is the only one TMAH free developer for this resist. AZ® 303 Developer is typically diluted 1:5 - 1:10 with water. Further Information MSDS: Safety Data Sheet AZ® 303 Developer english Sicherheitsdatenblatt AZ® 303 Entwickler german TDS: Technical Data Sheet AZ® 303 Developer english Application Notes: Development of Photoresist english Entwicklung von Fotolack german

AZ® 326 MIF Developer Metal Ion-free Developers   General Information AZ® 300 MIF, AZ® 326 MIF, AZ® 726 MIF and AZ® 2026 MIF Developers are developer formulations with 2.38 % TMAH (tetramethylammoniumhydroxide) in H2O. The AZ® 726 MIF Developer contains additionally a surfactant for better wetting and easy to settle up of puddle development. Additionally to the wetting agent of the AZ® 726 MIF the AZ® 2026 MIF contains a scum remover for complete and scum-free removal of resist layers on the price of a slightly higher dark erosion ratio. However, for our negative resists, such as AZ® nLof 2000 series, AZ® 15nXT series, AZ® 125nXT resists this developer shows outstanding performance. Even for a positive resist like AZ® 10XT resist it significantly reduces t-topping if this problem occurs. AZ® 2033 MIF is 3.00 % TMAH in H2O with surfactants added for fast and homogeneous substrate wetting and further additives for removal of resist residuals (residues in certain lacquer families), but at the cost of a higher dark removal. Compared to the AZ® 2026 MIF, the normality is not 0.26 but 0.33. Thus the development rate is higher with the AZ® 2033 MIF Developer. Further Information MSDS: Safety Data Sheet AZ® 326 MIF Developer english Sicherheitsdatenblatt AZ® 326 MIF Entwickler german TDS: Technical Data Sheet AZ® 326 MIF Developer english Application Notes: Development of Photoresist english Entwicklung von Fotolack german

AZ® 340 Developer Inorganic Developers   General Information AZ® 340 Developer is a high normality sodium based developer concentrate for use in on-site custom dilution applications. This developer concentrate is buffered for extended bath life and stable develop rates in batch processes. Dilute using 1 part AZ® 340 Developer to 4 parts DI water for high contrast processing. Developer normality (and develop rate) may be increased as required by increasing the AZ® 340 Developer to water ratio. Further Information MSDS: Safety Data Sheet AZ® 340 Developer english Sicherheitsdatenblatt AZ® 340 Developer german TDS: Technical Data Sheet AZ® 340 Developer english Application Notes: Development of Photoresist english Entwicklung von Fotolack german

AZ® 351B Developer Inorganic Developers   General Information AZ® 351B Developer is based on buffered NaOH and typically used in a 1:3 to 1:4 dilution (1 part of concentrate and 4 parts of DI-water). 1:3 dilution is the high speed setup while 1:4 will be used for a high contrast setup. It can be used especially for our thinner resist types, such as AZ® 1500 Series resists or image reversal resists such as AZ® 5200E resist series. Further Information MSDS: Safety Data Sheet AZ® 351B Developer english Sicherheitsdatenblatt AZ® 351B Entwickler german TDS: Technical Data Sheet AZ® 351B Developer english Application Notes: Development of Photoresist english Entwicklung von Fotolack german

AZ® 3DT-102M-15 Chemically Amplified Positive Photoresist   General Information AZ® 3DT-102M-15 is a chemically amplified positive tone photoresist with a very high aspect ratio. It is intended for the use as a mask for dry etching, ion implantation, RDL and electroplating applications (Cu-compatible). It can be used with i-line steppers as well as with conventional mask aligners. The AZ® 3DT-102M-15 is intended for a thickness range of 8 - 20 µm. Product Properties Steep sidewalls Compatible with-copper plating-processes For TSV, implantation, RDL, electroplating, dry etching Chemically amplified à PEB obligatory Compatible with most photoresist stripper (e.g. AZ® 100 Remover, organic solvent based or alkaline) i-line sensitive (can be used for broadband exposure as well) Resist film thickness range ca. 8 - 20 µm Developers The recommended developers are AZ® 326 MIF or AZ® 726 MIF for the photoresist AZ® 3DT-102M-15. Removers The recommended strippers for the AZ® 3DT-102M-15 are AZ® 920 Remover, AZ® 100 Remover, TechniStrip P1316, TechniStrip P1331 and TechniStrip MLO07. Thinning/ Edge Bead Removal We recommend for thinning the AZ® EBR Solvent. Further Information MSDS: Safety Data Sheet AZ® 3DT-102M-15 Photoresist english Sicherheitsdatenblatt AZ® 3DT-102M-15 Fotolack german TDS: Technical Data Sheet AZ® 3DT-102M-15 Photoresist english Application Notes: Further Information about Photoresist Processing

AZ® 400K Developer 1:4 Inorganic Developers   General Information In addition to the concentrate, a pre-diluted AZ® 400K 1:4 version is now also available, other dilution ratios on request. AZ® 400K MIC Developer is based on buffered KOH and typically used in a 1:3 to 1:4 dilution (1 part of concentrate and 4 parts of DI-water) and can be used especially for our thicker resist types, such as AZ® 4562, AZ® 10XT, and AZ® 40XT. Further Information MSDS: Safety Data Sheet AZ® 400K 1:4 Developer english Sicherheitsdatenblatt AZ® 400K 1:4 Entwickler german TDS: Technical Data Sheet AZ® 400K 1:4 Developer english Information AZ® 400K 1:4 Developer english Application Notes: Development of Photoresist english Entwicklung von Fotolack german

AZ® 400K Developer Inorganic Developers   General Information AZ® 400K MIC is based on buffered KOH and typically used in a 1:3 to 1:4 dilution (1 part of concentrate and 4 parts of DI-water) and can be used especially for our thicker resist types, such as AZ® 4562, AZ® 10XT, and AZ® 40XT. In addition to the concentrate, a pre-diluted AZ® 400K 1:4 version is now also available, other dilution ratios on request. Further Information MSDS: Safety Data Sheet AZ® 400K Developer english Sicherheitsdatenblatt AZ® 400K Entwickler german TDS: Technical Data Sheet AZ® 400K Developer english Information AZ® 400K Developer english Application Notes: Development of Photoresist english Entwicklung von Fotolack german

AZ® 40XT Chemically Amplified Thick Photoresist   General Information AZ® 40XT for 15 - 100 µm Resist Film Thickness (i-line) The chemically amplified AZ® 40 XT is an ultra thick resist whose high viscosity allows very large resist film thicknesses via a single coating. It does not require rehydration, requires low light doses, releases no nitrogen during exposure and develops very rapidly, thus permitting significantly shorter process times compared to standard thick resist films. However, the AZ® 40XT necessarily requires a Post Exposure Bake to be developed. Remark: The maximum soft bake temperature must not be applied abruptly, in order to prevent the formation of bubbles in the resist film. We recommend either the usage of a proximity hotplate, or a temperature ramp on a contact hotplate. The correct temperature ramps are crucial for bubble free resist processing with this resist.   Lines and spaces varying from 100 to 10 µm with a 40 µm thick AZ® 40XT at 400 mJ/cm2 exposure dose Product Properties 15 - 100 µm resist film thickness via single-coating Aqueous alkaline developers (e.g. AZ® 326/726/2026 MIF) No rehydration required, no N2-formation during exposure Very good adhesion, very steep resist sidewalls Can be stripped wet- and dry-chemically Optimized for electroplating, wet- and dry etching i-line sensitive (approx. 330 – 390 nm) Developers We recommend common TMAH-based developers such as the AZ® 326 MIF, AZ® 726 MIF or AZ® 2026 MIF developer. Removers AZ® 40XT photoresist is compatible with industry standard solvent based removers (e.g. NMP, DMSO, AZ® 920 Remover or Technistrip MLO07). Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal AZ® EBR Solvent or PGMEA. AZ® EBR70/30 Solvent is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® 40XT Photoresist english Sicherheitsdatenblatt AZ® 40XT Fotolack german TDS: Technical Data Sheet AZ® 40XT Photoresist english Application Notes: Further Information about Photoresist Processing

AZ® 4533 Thick Resists with Optimized Adhesion   General Information The AZ® 4500 series (AZ® 4533 and AZ® 4562) are positive thick resists with optimized adhesion for common wet etching and plating processes. The AZ® 4500 series follows the AZ® 1500 series in the attainable and processable resist film thickness range. AZ® 4533 (3.3 µm resist film thickness at 4000 rpm) and AZ® 4562 (6.2 µm) have a lower photoinitiator con¬centration compared to thin resists. This makes it possible to process thick resist films over 10 µm without N2 bubble formation, but at the expense of a significantly lower development rate. Product Properties Optimized resist adhesion to all common substrate materials Broad process parameter window for stable and reproducible litho-processes Compatible with all common developers (KOH- or TMAH-based) Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents, or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range approx. 2.5 - 5 µm Developers If metal ion containing developers can be used the KOH-based AZ® 400K in a 1:4 dilution or the finish diluted version AZ® 400K 1:4 (for higher resist film thicknesses 1:3.5 - 1:3 diluted possible) is a suited developer. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 2026 MIF developer (undiluted). Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals. Further Information MSDS: Safety Data Sheet AZ® 4533 Photoresist english Sicherheitsdatenblatt AZ® 4533 Fotolack german TDS: Technical Data Sheet AZ® 4533 Photoresist english Application Notes: Further Information about Photoresist Processing