Acetic Acid CH3COOH   General Information Acetic Acid as surfactant and buffer is a commonly used additive for various etching mixtures. We supply Acetic Acid (99 %) in VLSI-quality, which is the usual purity grades applied in semiconductor processing and micro-electronics. Further Information   MSDS: Safety Data Sheet Acetic Acid (VLSI) 100 % english Sicherheitsdatenblatt Essigsäure (VLSI) 100 % german Specs: Specs Acetic Acid (VLSI) 100 % Application Notes: Wet Etching english Nasschemisch Ätzen german

Acetone CH3COCH3   General Information Acetone removes organic impurities from substrates and is well suited for greasy/oily contaminations. However, its large vapour pressure causes rapid drying together with a resorption of the contaminants on the substrate. Therefore an immediately subse¬quent rinsing step is recommended with a higher boiling solvent such as isopropanol. Acetone is not well-suited as lift-off medium due to the high fire danger when heated and the trend of particles to be lifted to resorb onto the substrate. Product Properties Density: 0.79 g/cm^3 Melting point: 95°C Boiling point: 56°C Flash point: < -18°C Vapour pressure @ 20°C: 244 hPa   Acetone Molecule Further Information MSDS: Safety Data Sheet Acetone english (TECHNIC France) Sicherheitsdatenblatt Aceton german (TECHNIC France) Safety Data Sheet Acetone english (MicroChemicals GmbH) Sicherheitsdatenblatt Aceton german (MicroChemicals GmbH) Specs: Specs Acetone ULSI (TECHNIC France) Specs Acetone VLSI (TECHNIC France) Specs Acetone ULSI (MicroChemicals GmbH) Application Notes: Solvents english Lösemittel german

Borosilicate 8 inch, thickness = 500 ± 10 µm, , 2-side polished, TTV < 10 µm

Ammonia Solution NH4OH   General Information Mixed with H2O2, Ammonia is an ingredient of many etching mixtures for metals such as copper, silver or aluminum. Our Ammonia solution (28 - 30%) is available in VLSI-quality, which is the usual purity grades applied in semiconductor processing and micro-electronics. Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details. Further Information MSDS: Safety Data Sheet Ammonium Hydroxide Solution (VLSI) 28-30% english Specs: Specs Ammonium Hydroxide Solution (VLSI) 28-30% Application Notes: Wet Etching english Nasschemisches Ätzen german

Calendar 70 x 100cm   We send our wall calendars to our customers every year. If you are interested in a 70 x 100cm annual calendar, please add it to your order or just fill in the form.

Au etch 200 Gold Etchant   General Information Au etch 200 is a non-hazardous, cyanide-free, slightly alkaline etchant for Au. The etchant is used for the wet-chemical patterning of Au layers with selectivity to metals like Pt, Ni, Cr, Ti, Al. Common areas of use for semiconductor fabrication or micro system technology. Product Properties Low undercut (in the range of the layer thickness), minimum feature size < 1 µm Selectivity to many materials, e.g. common metals used in electroplating industry Available in different purity grades Compatible to resist masking Not hazardous substance and easy to handle Selectivity Au etch 200 is compatible/etches selective to following materials: Resists: common Novolak as masking resist (e.g. AZ® Photoresist) Metals: no attack on Pt, Ni, Cr, Ti, Al, Ta Metals: attacked Au, Cu Semiconductor materials: Si, SiO2, Si3N4 Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details. Etching Rate Under normal condition, the etching rate is around 40 nm/min (at 50°C). The mixed etching solution is stable over time and can be used multiple times depending on the requirements of application. It is recommended to dispose the solution at the latest, when the etching rate has changed by 20%. Further Information MSDS: Safety Data Sheet Au etch 200 english Sicherheitsdatenblatt Au etch 200 german TDS: Technical Data Sheet Au etch 200 english Technical Data Sheet Au etch 200 german Application Notes: Wet Etching english Nasschemisches Ätzen german Wet Etching of Metals english Nasschemisches Ätzen von Metallen german Further Information about Processing

AX 100 Activator   General Information AX 100 is an acidic solution for activating and pretreating seed layers and metallic surfaces for electroplating, on which a direct metallization may cause problems regarding the adhesive strength. This applies e.g. for the electroplating of Au on Ni surfaces or direct electroplating on Ti or TiW layers. AX 100 activates metallic surfaces before electroplating and allows a better adhesive strength of electroplated layers on metallic surfaces, which tend to oxidation. Common fields of application are semiconductor fabrication and microsystem technology. Product Properties Low or none etch attack on metallic surfaces Compatible to many materials, e.g. common metals used in electroplating industry Compatible to resist masking Not poisonous substance and easy to handle Moderate operation temperature of about 40°C Selectivity AX 100 is compatible/etches selective to following materials: Resists: common Novolak as masking resist (e.g. AZ® Photoresist) Metals: no attack on Ni, Ti, TiW, Ta, Cu Semiconductor materials: Si, SiO2, Si3N4 Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details. Further Information MSDS: Safety Data Sheet AX 100 english Sicherheitsdatenblatt AX 100 german TDS: Technical Data Sheet AX 100 english Application Notes: Further Information about Processing

AZ® 100 Remover Universal Photoresist Stripper   General Information AZ®100 Remover is based on solvent and amine (alkaline). AZ®100 Remover is used for photoresist stripping with low attack to aluminium. Low hazard is achieved by the use of ethanol amine. Low evaporation rate allows the use at elevated temperatures (up to 80°C), high efficiency (>3000 wafer per litre) helps saving costs. Where attack to aluminium is of no concern, it may even be diluted with water. AZ®100 Remover is not compatible with AZ® nLof 2070 (AZ® nLof 2000 series) resists and other heavily cross linked resists. Product Properties Density (at 25°C): 0.955 kg/l Color (Alpha): max. 20 Flashpoint (AP): 72°C Normality (potentiometric): 3.1 mol/l Boiling range: 159-194°C Further Information MSDS: Safety Data Sheet AZ® 100 Remover english Sicherheitsdatenblatt AZ® 100 Remover german TDS: Technical Data Sheet AZ® 100 Remover english Application Notes: Photoresist removal english Fotolack entfernen german

AZ® 10XT (220CPS) Thick photoresist for high resolution   General Information AZ® 10XT is an i- and h-line (not g- line !) sensitive positive thick photoresist, as the successor to the AZ® 9260 and is largely identical in construction, but with a different surfactant. In contrast to the similarly named AZ® 12XT, the AZ® 10XT is not chemically amplified.   3.0 µm lines in 12 µm thick AZ® 10XT Ultratech 1500 Exposure, AZ® 400K Developer 1:4 (260s spray)   Product Features AZ® 10XT not only has optimized resist adhesion to common substrate materials, but also the potential for very steep resist sidewalls and high aspect ratios. Accordingly, the AZ® 10XT is often used in electroplating, ion implantation or dry etching/RIE. AZ® 10XT achieves a resist film thickness of approx. 6 µm at a spin speed of 4000 rpm; with an appropriately adjusted spin profile, the resist film thickness range of approx. 4.5 - 20 µm can be covered. If thinner resist layers are desired, the AZ® 10XT can be diluted with PGMEA; alternatively, the thinner AZ® 4533 can also be used for many applications. From a resist film thickness of approximately 10 - 15 µm, processing the AZ® 10XT becomes increasingly time-consuming: the soft bake and subsequent development take longer, more and more time is needed for rehydration between soft bake and exposure, and the risk of nitrogen bubbles forming during exposure increases. For resist film thicknesses greater than 10 µm, it is recommended to consider using a chemically amplified thick resist such as AZ® 12 XT (5 - 20 µm resist film thickness) or AZ®IPS 6090 (> 20 µm resist film thickness), which have significantly shorter soft bake and development times for the corresponding resist thickness, do not need rehydration, require significantly lower exposure doses, and do not release nitrogen during exposure. Developers For development, we recommend either TMAH-based developers such as the ready-to-use AZ® 326 MIF or AZ® 726 MIF, or the KOH-based AZ® 400K 1:4 (typically 1: 4 diluted with water, for faster development also slightly stronger with 1:3.5 or 1:3). On alkaline-sensitive substrate materials such as aluminum, we recommend the aluminum-compatible, undiluted AZ® Developer. Removers If the resist structures have not been thermally cross-linked by plasma processes, ion implantation or high temperatures (> approx. 140 °C), all common removers such as AZ® 100 Remover, DMSO or many other organic solvents (e.g. Acetone rinsed with Isopropanol) are suitable for removing the resist layer. For cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip P1316 or AZ® 920 Remover are recommended, and in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning / Edge Wall Removal If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is the recommended solvent. PGMEA is the solvent for AZ® 10 XT anyway and is also recommended for edge wall removal if necessary. Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® 10XT (220cps) english Safety Data Sheet AZ® 10XT (220cps) german TDS: Technical Data Sheet AZ® 10XT (220cps) english Application Notes: Further Information about Photoresist Processing

AZ® 10XT (520CPS) Thick photoresist for high resolution   General Information AZ® 10XT is an i- and h-line (not g- line !) sensitive positive thick photoresist, as the successor to the AZ® 9260 and is largely identical in construction, but with a different surfactant. In contrast to the similarly named AZ® 12XT, the AZ® 10XT is not chemically amplified.   3.0 µm lines in 12 µm thick AZ® 10XT Ultratech 1500 Exposure, AZ® 400K Developer 1:4 (260s spray)   Product Features AZ® 10XT not only has optimized resist adhesion to common substrate materials, but also the potential for very steep resist sidewalls and high aspect ratios. Accordingly, the AZ® 10XT is often used in electroplating, ion implantation or dry etching/RIE. AZ® 10XT achieves a resist film thickness of approx. 6 µm at a spin speed of 4000 rpm; with an appropriately adjusted spin profile, the resist film thickness range of approx. 4.5 - 20 µm can be covered. If thinner resist layers are desired, the AZ® 10XT can be diluted with PGMEA; alternatively, the thinner AZ® 4533 can also be used for many applications. From a resist film thickness of approximately 10 - 15 µm, processing the AZ® 10XT becomes increasingly time-consuming: the soft bake and subsequent development take longer, more and more time is needed for rehydration between soft bake and exposure, and the risk of nitrogen bubbles forming during exposure increases. For resist film thicknesses greater than 10 µm, it is recommended to consider using a chemically amplified thick resist such as AZ® 12 XT (5 - 20 µm resist film thickness) or AZ®IPS 6090 (> 20 µm resist film thickness), which have significantly shorter soft bake and development times for the corresponding resist thickness, do not need rehydration, require significantly lower exposure doses, and do not release nitrogen during exposure. Developers For development, we recommend either TMAH-based developers such as the ready-to-use AZ® 326 MIF or AZ® 726 MIF, or the KOH-based AZ® 400K 1:4 (typically 1: 4 diluted with water, for faster development also slightly stronger with 1:3.5 or 1:3). On alkaline-sensitive substrate materials such as aluminum, we recommend the aluminum-compatible, undiluted AZ® Developer. Removers If the resist structures have not been thermally cross-linked by plasma processes, ion implantation or high temperatures (> approx. 140 °C), all common removers such as AZ® 100 Remover, DMSO or many other organic solvents (e.g. Acetone rinsed with Isopropanol) are suitable for removing the resist layer. For cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip P1316 or AZ® 920 Remover are recommended, and in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning / Edge Wall Removal If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is the recommended solvent. PGMEA is the solvent for AZ® 10 XT anyway and is also recommended for edge wall removal if necessary.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® 10XT (520cps) english Safety Data Sheet AZ® 10XT (520cps) german TDS: Technical Data Sheet AZ® 10XT (520cps) english Anwendungshinweis: Further Information about Photoresist Processing

AZ® 125nXT-10B Ultra-Thick Negative Resist for Plating   General Information The AZ® 125nXT-10B is an i-line sensitive, negative ultra-thick resist with steep resist sidewalls and high aspect ratio. 20 µm lines at 60 µm resist film thickness. 15 µm holes at 60 µm resist film thickness. 80 µm plated CuNi image. Product Features The ultra-thick negative resist AZ® 125nXT-10B covers a resist film thickness range of 20 - 50 µm and can be built up and processed to 100 µm and much more with adapted spin profiles. AZ® 125nXT-10B is only i-line sensitive and, as a special feature (for negative resists), does not require a post exposure bake after exposure for cross-linking, i.e. the AZ® 125nXT-10B photopolymerizes. Due to its low absorption, even very thick resist layers can be easily exposed and steep resist sidewalls can be achieved. This and its very good adhesion to all common substrate materials make this resist suitable for the galvanic molding of thick to very thick layers as well as DRIE. With low exposure doses or very thick resist layers - related to the respective resist film thickness - the resist profile becomes slightly negative, since the resist areas close to the substrate experience less cross-linking. If the electroplating process shows that these weakly cross-linked areas of the resist are attacked, but a higher structuring exposure dose is not an option, flood exposure (without a photomask) after development with very high doses can cross-link the resist sidewalls even near the substrate, which, however, makes it more difficult to strip the resist later. Even after such flood exposure, no further post exposure back is necessary. AZ® 125nXT-10B can generally be processed with resist films of less than 20 µm thick, but processing becomes problematic below 10 µm thickness: Since the additive responsible for cross-linking escapes from the resist surface during softbaking, only a few micrometers of the exposed resist surface are removed during development, which accounts for a correspondingly large proportion of the total thickness in the case of thin resist films. Developers AZ® 326 MIF (immersion development), AZ® 726 MIF (puddle development) or AZ® 2026 MIF (which has an additive that promotes residue-free development, especially with cross-linking resists) are recommended for developing the AZ® 125nXT-10B. KOH- or NaOH-based developers such as AZ® 400K or AZ® 351B are generally not suitable for the AZ® 125nXT-10B. If TMAH-based developers cannot be used, a KOH-based developer in higher concentration than usual can be considered. Removers AZ® 125nXT-10B can be removed wet-chemically using conventional strippers, but stripping very thick cross-linked resist structures can be quite a challenge. If organic solvents are preferred for this, (hot) DMSO is recommended, which does not dissolve cross-linked resists, but can detach them from the substrate after a certain exposure time. This process can be accelerated by reducing the degree of cross-linking of the resist near the substrate by using a lower exposure dose. Alternatively, high-performance strippers such as the NMP-free TechniStrip P1316 are recommended, or in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning/ Edge Wall Removal If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is an option. PGMEA is the solvent for AZ® 125nXT-10B anyway and is also recommended for edge wall removal if necessary.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® 125nXT-10B english Safety Data Sheet AZ® 125nXT-10B german TDS: Technical Data Sheet AZ® 125nXT-10B english Application Notes: Further Information about Photoresist Processing

AZ® 12XT-20PL-10 Chemically Amplified Positive Tone Photoresists   General Information AZ® 12XT is a chemically amplified, i-line sensitive thick photoresist for high aspect ratios and with an increased thermal softening point.   AZ® 12XT - 2.4mm lines at 10mm film thickness   Product Features AZ® 12XT covers a resist film thickness range of approx. 5 - 20 µm. As a chemically amplified resist, the AZ® 12XT does not require rehydration between softbake and exposure, requires significantly lower exposure doses compared to non-chemically amplified resists of comparable thickness, does not release nitrogen during exposure (no bubble formation in the resist film during exposure), and has very high development rates for a thick resist. These properties help to make the entire process significantly faster and less prone to problems than with non-chemically amplified thick resists. Its good adhesion to all common substrate materials and its potential for steep resist sidewalls make it suitable for galvanic molding, and its high thermal softening point (approx. 130 °C) also recommends it for dry etching or DRIE. Basically, the AZ® 12XT is only sensitive to i-line, but with correspondingly high exposure doses and resist film thicknesses, the h-line (405 nm) can also be used. If resist film thicknesses of less than approx. 5 µm are required, the AZ® 12XT can easily be diluted with PGMEA = AZ® EBR Solvent. For resist film thicknesses greater than 15 µm, the chemically amplified AZ® IPS 6090 should be considered. Developers TMAH-based developers such as the ready-to-use AZ® 326 MIF or AZ® 726 MIF are recommended for developing this chemically amplified photoresist. KOH- or NaOH-based developers such as the AZ® 400 K or AZ® 351B are less suitable for the AZ® 12 XT. Removers If the resist structures have not been thermally cross-linked by plasma processes, ion implantation or high temperatures (> approx. 140 °C), all common removers such as AZ® 100 Remover, DMSO or many other organic solvents (e.g. acetone rinsed with isopropanol) are suitable for removing the resist layer. For cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip P1316 or AZ® 920 Remover are recommended, and in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning/ Edge Bead Removal If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is an option. PGMEA is the solvent for AZ® 12 XT anyway and is also recommended for edge wall removal if necessary.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® 12XT 20PL-10 english Safety Data Sheet AZ® 12XT 20PL-10 german TDS: Technical Data Sheet AZ® 12XT 20PL-10 english Application Notes: Further Information about Photoresist Processing

AZ® 12XT-20PL-15 Chemically Amplified Positive Tone Photoresists   General Information AZ® 12XT is a chemically amplified, i-line sensitive thick photoresist for high aspect ratios and with an increased thermal softening point.   AZ® 12XT - 2.4mm lines at 10mm film thickness   Product Features AZ® 12XT covers a resist film thickness range of approx. 5 - 20 µm. As a chemically amplified resist, the AZ® 12XT does not require rehydration between softbake and exposure, requires significantly lower exposure doses compared to non-chemically amplified resists of comparable thickness, does not release nitrogen during exposure (no bubble formation in the resist film during exposure), and has very high development rates for a thick resist. These properties help to make the entire process significantly faster and less prone to problems than with non-chemically amplified thick resists. Its good adhesion to all common substrate materials and its potential for steep resist sidewalls make it suitable for galvanic molding, and its high thermal softening point (approx. 130 °C) also recommends it for dry etching or DRIE. Basically, the AZ® 12XT is only sensitive to i-line, but with correspondingly high exposure doses and resist film thicknesses, the h-line (405 nm) can also be used. If resist film thicknesses of less than approx. 5 µm are required, the AZ® 12XT can easily be diluted with PGMEA = AZ® EBR Solvent. For resist film thicknesses greater than 15 µm, the chemically amplified AZ® IPS 6090 should be considered. Developers TMAH-based developers such as the ready-to-use AZ® 326 MIF or AZ® 726 MIF are recommended for developing this chemically amplified photoresist. KOH- or NaOH-based developers such as the AZ® 400 K or AZ® 351B are less suitable for the AZ® 12 XT. Removers If the resist structures have not been thermally cross-linked by plasma processes, ion implantation or high temperatures (> approx. 140 °C), all common removers such as AZ® 100 Remover, DMSO or many other organic solvents (e.g. acetone rinsed with isopropanol) are suitable for removing the resist layer. For cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip P1316 or AZ® 920 Remover are recommended, and in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning/ Edge Bead Removal If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is an option. PGMEA is the solvent for AZ® 12 XT anyway and is also recommended for edge wall removal if necessary.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® 12XT 20PL-15 english Safety Data Sheet AZ® 12XT 20PL-15 german TDS: Technical Data Sheet AZ® 12XT 20PL-15 english Application Notes: Further Information about Photoresist Processing

AZ® 1505 Positive Thin Resists for Wet Etching   General Information The AZ® 1500 photoresist series yields an improved adhesion for all common wet etching processes. The lateral resolution depends on the resist film thickness and reaches down to sub-µm. The high resolution and adhesion of the AZ® 1505 make this resist a commonly used resist mask for Cr etching in photo mask production. At 4000 rpm, a coating thickness of approx. 500 nm can be attained. A coating thickness of approx. 400 - 800 nm can also be achieved by varying the spin speed. Product Properties Improved resist adhesion to all common substrate materials Broad process parameter window for stable and reproducible litho-processes High development rate Compatible with all common developers (NaOH-, KOH- or TMAH-based) Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range approx. 0.4 – 0.8 µm Developers If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based **AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent. Further Information MSDS: Safety Data Sheet AZ® 1505 Photoresist english Sicherheitsdatenblatt AZ® 1505 Fotolack german TDS: Technical Data Sheet AZ® 1505 Photoresist english Application Notes: Further Information about Photoresist Processing

AZ® 1512 HS Positive Thin Resists for Wet Etching   General Information The AZ® 1500 photoresist series yields an improved adhesion for all common wet etching processes. The lateral resolution depends on the resist film thickness and reaches down to sub-µm. The very high photo active compound concentration of the AZ® 1512 HS maximises the resist contrast (very high development rate, minimized dark erosion). At 4000 rpm, a coating thickness of approx. 1.2 µm can be attained. A coating thickness of approx. 1.0 – 1.8 µm can also be achieved by varying the spin speed. Product Properties Improved resist adhesion to all common substrate materials Broad process parameter window for stable and reproducible litho-processes High development rate Compatible with all common developers (NaOH-, KOH- or TMAH-based) Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range approx. 1.0 – 1.8 µm Developers If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF** developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent. Further Information MSDS: Safety Data Sheet AZ® 1512 HS Photoresist english Sicherheitsdatenblatt AZ® 1512 HS Fotolack german TDS: Technical Data Sheet AZ® 1512 HS Photoresist english Application Notes: Further Information about Photoresist Processing

AZ® 1514H Positive Thin Resists for Wet Etching   General Information The AZ® 1500 photoresist series yields an improved adhesion for all common wet etching processes. The lateral resolution depends on the resist film thickness and reaches down to sub-µm. A special resin further improves the resist adhesion on most common (metallic) substrates. Resist film thickness at 4000 rpm approx. 1.4 µm, via variations of the spin speed approx. 1.1 - 2 µm attainable. Product Properties Improved resist adhesion to all common substrate materials Broad process parameter window for stable and reproducible litho-processes High development rate Compatible with all common developers (NaOH-, KOH- or TMAH-based) Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents, or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range approx. 1.1 µm – 2.0 µm Developers If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based **AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent. Further Information MSDS: Safety Data Sheet AZ® 1514 H Photoresist english Sicherheitsdatenblatt AZ® 1514 H Fotolack german TDS: Technical Data Sheet AZ® 1514 H Photoresist english Application Notes: Further Information about Photoresist Processing

AZ® 1518 Positive Thin Resists for Wet Etching   General Information The AZ® 1500 photoresist series yields an improved adhesion for all common wet etching processes. The lateral resolution depends on the resist film thickness and reaches down to sub-µm. The elevated resist film thickness of the AZ® 1518 improve the stability of the resist mask for wet etching processes. At 4000 rpm, a coating thickness of approx. 1.8 µm can be attained. A coating thickness of approx. 1.5 – 3.0 µm can also be achieved by varying the spin speed. Product Properties Improved resist adhesion to all common substrate materials Broad process parameter window for stable and reproducible litho-processes High development rate Compatible with all common developers (NaOH-, KOH- or TMAH-based) Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range approx. 1.5 µm – 3.0 µm Developers If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent. Further Information MSDS: Safety Data Sheet AZ® 1518 Photoresist english Sicherheitsdatenblatt AZ® 1518 Fotolack german TDS: Technical Data Sheet AZ® 1518 Photoresist english Application Notes: Further Information about Photoresist Processing

AZ® 15nXT (115CPS) Thick Negative Resist for Plating   General Information The i-line sensitive negative resist AZ® 15nXT (115CPS) is a thick resist with approx. 3 - 5 µm film thickness and very steep resist sidewalls for e. g. RIE or electroplating, for example. 5 µm lines at 10 µm resist film thickness. 5 µm holes at 10 µm resist film thickness. 5 µm plated CuNi image. 3.6 µm plated CuNi image. Product Features AZ® 15nXT (115CPS) covers a resist film thickness range of - depending on the spin speed - approx. 2 - 3 µm. It is only i-line sensitive and requires a post exposure bake after exposure to complete the cross-linking induced during exposure. The resist structures developed are very vertical with adjusted process parameters, becoming increasingly negative towards thick resist films or - based on the respective resist film thickness - lower exposure doses. If thinner resist films are required, the AZ® 15nXT (115CPS) can be diluted with PGMEA = AZ® EBR Solvent; for thicker layers, the higher viscosity AZ® 15nXT (450CPS) is recommended. AZ® 15nXT (115CPS) is suitable as a mask for the galvanic deposition of e.g. Cu, Ni or Au due to its good adhesion to all common substrate materials and its high chemical stability. Developers For the development of the AZ® 15nXT (115CPS), TMAH-based developers such as the ready-to-use AZ® 326 MIF (immersion development), AZ® 726 MIF (puddle development) or AZ® 2026 MIF are recommended, which promotes residue-free development, especially with cross-linking resists, thanks to an additive. KOH- or NaOH-based developers such as the AZ® 400 K or AZ® 351B are generally not suitable for the AZ® 15nXT (115CPS). If TMAH-based developers cannot be used, an attempt with a KOH-based developer in higher concentration than usual can be considered. Removers If the resist structures have not been thermally cross-linked too much, for example through metallization, stripping or lift-off with organic solvents (acetone rinsed with isopropanol or DMSO) can be successful. For more strongly cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip NI555 or AZ® 910 Remover are recommended, or in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning/ Edge Wall Removal If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is an option. PGMEA is the solvent for AZ® 15nXT (115CPS) anyway and is also recommended for edge wall removal if necessary.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® 15nXT (115CPS) Photoresist english Safety Data Sheet AZ® 15nXT (115CPS) Photoresist german TDS: Technical Data Sheet AZ® 15nXT (115CPS) Photoresist english Technical Data Sheet AZ® 15nXT Series english Application Notes: Further Information about Photoresist Processing

AZ® 15nXT (450CPS) Thick Negative Resist for Plating   General Information The i-line sensitive negative resist AZ® 15nXT (450CPS) is a thick resist with a thickness of approx. 5 - 10 µm and vertical resist sidewalls for RIE or electroplating, for example. 5 µm lines at 10 µm resist film thickness. 5 µm holes at 10 µm resist film thickness. 5 µm plated CuNi image. 3.6 µm plated CuNi image. Product Features AZ® 15nXT (450CPS) covers a resist film thickness range of - depending on the spin speed - approx. 5 - 10 µm. It is only i-line sensitive and requires a post exposure bake after exposure to complete the cross-linking induced during exposure. With adjusted process parameters, the resist structures developed are vertical, increasingly negative towards thick resist films or - based on the respective resist film thickness - lower exposure doses. If thinner resist films are required, the AZ® 15nXT (450CPS) can be diluted with PGMEA = AZ® EBR Solvent. AZ® 15nXT (450CPS) is suitable as a mask for the galvanic deposition of e.g. Cu, Ni or Au due to its good adhesion to all common substrate materials and its high chemical stability. Developers For the development of the AZ® 15nXT (450CPS), TMAH-based developers such as the ready-to-use AZ® 326 MIF (immersion development), AZ® 726 MIF (puddle development) or AZ® 2026 MIF are recommended, which promotes residue-free development, especially with cross-linking resists, thanks to an additive. KOH- or NaOH-based developers such as the AZ® 400 K or AZ® 351B are generally not suitable for the AZ® 15nXT (450CPS). If TMAH-based developers cannot be used, an attempt with a KOH-based developer in higher concentration than usual can be considered. Removers If the resist structures have not been thermally cross-linked too much, for example through metallization, stripping or lift-off with organic solvents (acetone rinsed with isopropanol or DMSO) can be successful. For more strongly cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip NI555 or AZ® 910 Remover are recommended, or in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning/ Edge Wall Removal If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is an option. PGMEA is the solvent for AZ® 15nXT (450CPS) anyway and is also recommended for edge wall removal if necessary.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® 15nXT (450CPS) Photoresist english Safety Data Sheet AZ® 15nXT (450CPS) Photoresist german TDS: Technical Data Sheet AZ® 15nXT (450CPS) Photoresist english Technical Data Sheet AZ® 15nXT Series english Information AZ® 15nXT (450CPS) Photoresist english Application Notes: Further Information about Photoresist Processing

AZ® 2026 MIF Developer Metal Ion-free Developers   General Information AZ® 300 MIF, AZ® 326 MIF, AZ® 726 MIF and AZ® 2026 MIF Developers are developer formulations with 2.38 % TMAH (tetramethylammoniumhydroxide) in H2O. The AZ® 726 MIF Developer contains additionally a surfactant for better wetting and easy to settle up of puddle development. Additionally to the wetting agent of the AZ® 726 MIF the AZ® 2026 MIF contains a scum remover for complete and scum-free removal of resist layers on the price of a slightly higher dark erosion ratio. However, for our negative resists, such as AZ® nLof 2000 series, AZ® 15nXT series, AZ® 125nXT resists this developer shows outstanding performance. Even for a positive resist like AZ® 10XT resist it significantly reduces t-topping if this problem occurs. AZ® 2033 MIF is 3.00 % TMAH in H2O with surfactants added for fast and homogeneous substrate wetting and further additives for removal of resist residuals (residues in certain lacquer families), but at the cost of a higher dark removal. Compared to the AZ® 2026 MIF, the normality is not 0.26 but 0.33. Thus the development rate is higher with the AZ® 2033 MIF Developer. Further Information MSDS: Safety Data Sheet AZ® 2026 MIF Developer english Sicherheitsdatenblatt AZ® 2026 MIF Developer deutsch TDS: Technical Data Sheet AZ® 2026 MIF Developer english Application Notes: Development of Photoresist english Entwicklung von Fotolack deutsch

AZ® 2033 MIF Developer Metal Ion-free Developers   General Information AZ® 300 MIF, AZ® 326 MIF, AZ® 726 MIF and AZ® 2026 MIF Developers are developer formulations with 2.38 % TMAH (tetramethylammoniumhydroxide) in H2O. The AZ® 726 MIF Developer contains additionally a surfactant for better wetting and easy to settle up of puddle development. Additionally to the wetting agent of the AZ® 726 MIF the AZ® 2026 MIF contains a scum remover for complete and scum-free removal of resist layers on the price of a slightly higher dark erosion ratio. However, for our negative resists, such as AZ® nLof 2000 series, AZ® 15nXT series, AZ® 125nXT resists this developer shows outstanding performance. Even for a positive resist like AZ® 10XT resist it significantly reduces t-topping if this problem occurs. AZ® 2033 MIF is 3.00 % TMAH in H2O with surfactants added for fast and homogeneous substrate wetting and further additives for removal of resist residuals (residues in certain lacquer families), but at the cost of a higher dark removal. Compared to the AZ® 2026 MIF, the normality is not 0.26 but 0.33. Thus the development rate is higher with the AZ® 2033 MIF Developer. Further Information MSDS: Safety Data Sheet AZ® 2033 MIF Developer english Sicherheitsdatenblatt AZ® 2033 MIF Entwickler german TDS: Technical Data Sheet AZ® 2033 MIF Developer english Application Notes: Development of Photoresist english Entwicklung von Fotolack german

AZ® 300 MIF Developer Metal Ion-free Developers   General Information AZ® 300 MIF, AZ® 326 MIF, AZ® 726 MIF and AZ® 2026 MIF Developers are developer formulations with 2.38 % TMAH (tetramethylammoniumhydroxide) in H2O. The AZ® 726 MIF Developer contains additionally a surfactant for better wetting and easy to settle up of puddle development. Additionally to the wetting agent of the AZ® 726 MIF the AZ® 2026 MIF contains a scum remover for complete and scum-free removal of resist layers on the price of a slightly higher dark erosion ratio. However, for our negative resists, such as AZ® nLof 2000 series, AZ® 15nXT series, AZ® 125nXT resists this developer shows outstanding performance. Even for a positive resist like AZ® 10XT resist it significantly reduces t-topping if this problem occurs. AZ® 2033 MIF is 3.00 % TMAH in H2O with surfactants added for fast and homogeneous substrate wetting and further additives for removal of resist residuals (residues in certain lacquer families), but at the cost of a higher dark removal. Compared to the AZ® 2026 MIF, the normality is not 0.26 but 0.33. Thus the development rate is higher with the AZ® 2033 MIF Developer. Further Information MSDS: Safety Data Sheet AZ® 300 MIF Developer english Sicherheitsdatenblatt AZ® 300 MIF Entwickler german TDS: Technical Data Sheet AZ® 300 MIF Developer english Application Notes: Development of Photoresist english Entwicklung von Fotolack german

AZ® 303 Developer Inorganic Developers   General Information AZ® 303 MIC is a KOH and NaOH based developer for positive and negative resists. Product Features AZ® 303 Developer is based on an aqueous KOH and NaOH solution and contains strong surfactants. It is compatible with positive and negative resists and is therefore suitable, for example, as the only non-TMAH-based developer for the AZ® nLOF 2000 series. AZ® 303 Developer is usually used diluted 1: 5 - 1:10 with water.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® 303 Developer english Safety Data Sheet AZ ® 303 Entwickler german TDS: Technical Data Sheet AZ® 303 Developer english Application Notes: Development of Photoresist english Development of Photoresist german

AZ® 326 MIF Developer Metal Ion-free Developer   General Information AZ® 326 MIF is a TMAH-based developer for dip or spray development, compatible with all AZ®</sup photoresists from our portfolio. Product Features The ready-to-use AZ® 326 MIF developer is an aqueous 2.38% TMAH solution without any additives. This makes it suitable for dip or spray development, but less for puddle development, for which the AZ® 726 MIF developer is the better choice due to its special surfactant for substrate wetting. TMAH-based developers are always used when development must be carried out metal ion free. In addition, TMAH- based developers are primarily recommended for our chemically amplified positive resists and our negative resists. For very thin resist layers (< 1 µm) or very high resolution requirements, it can be useful to dilute the AZ® 326 MIF with water (AZ® 326 MIF : water = 2:1 to a maximum of 1:1). AZ® 326 MIF attacks aluminum with an etching rate of approx. 70 nm/min. If this cannot be tolerated, the Al-compatible AZ® Developer is an alternative, which, however, is based on sodium compounds and is therefore not metal ion-free. For standard (non chemically amplified), DNQ-based positive resists without the requirement of metal ion-free development, a KOH- or NaOH-based developer such as AZ® 400K or AZ® 351B can be considered instead of a TMAH-based developer for cost reasons. For cross-linking negative resists, AZ® 2026 MIF can prove advantageous, which promotes residue-free development with these resists through certain additives.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® 326 MIF Developer english Safety Data Sheet AZ® 326 MIF Entwickler german TDS: Technical Data Sheet AZ® 326 MIF Developer english Application Notes: Development of Photoresist english Development of Photoresist german