REMOVER AND STRIPPER
Usually, photoresists are only used as a temporary mask for structuring steps. The last lithography step is therefore usually the removal of the resist mask. On the one hand, this should be done quickly and residue-free, but on the other hand it should not damage the substrate or the materials already deposited on it, which is not always an easy task to solve.
Solvent as remover
Acetone
Acetone is only suitable for removing photoresist coatings to a limited extent due to its high vapour pressure. If acetone is nevertheless to be used, we recommend rinsing the acetone contaminated with resist with isopropyl alcohol before the acetone dries again and forms streaks. We strongly advise against heating the acetone to increase the dissolving power due to the high vapour pressure and the associated high risk of fire.
NMP
NMP (1-methyl-2-pyrrolidone) is a very suitable solvent for removing photoresist coatings. The very low vapour pressure of NMP allows it to be heated to 80°C in order to remove even more cross-linked photoresist layers. As NMP is classified as toxic and teratogenic, alternatives such as DMSO should be considered.
DMSO
DMSO (dimethyl sulphoxide), which performs similarly well as a remover to NMP and is harmless in terms of occupational safety. We have already included DMSO in semiconductor quality in our range, please ask us for specifications and/or a sample if you are interested.
Alkaline media as remover
If the chemical stability of the substrate allows it and no special remover is to be used, aqueous alkaline media such as 2-3 % KOH or NaOH (= typical developer concentrates) can be used at room temperature to remove photoresist layers as an alternative. For cross-linked photoresist layers, higher concentrations and/or temperatures may also be necessary. However, it should be noted that many metals are etched at high pH values, and crystalline silicon is also attacked by highly concentrated alkaline media.
Alkaline and solvent-based ready-to-use strippers
AZ® 100 Remover
AZ® 100 Remover is an amine-solvent mixture and standard remover for AZ® and TI photoresists. To improve its performance, AZ ® 100 Rem over can be heated to 60 - 80°C to remove even stubborn photoresist layers.
TechniStrip® P1316 and P1331
TechniStrip® P1316 for alkali-sensitive substrates and P1331 for alkali-sensitive substrates are strippers with very strong dissolving power for
- Novolak-based lacquers (including all AZ® positive lacquers)
- Epoxy-based lacquers
- Polyimides, bonding glues
- Dry films
At typical application temperatures of around 75°C, TechniStrip® P1316 also dissolves highly cross-linked paints, e.g. by dry etching or ion implantation, in just a few minutes without leaving any residue. TechniStrip® P1316 can also be used in a spray process.
TechniStrip® NI555
TechniStrip® NI555 is a stripper with very strong dissolving power for Novolak-based negative paints and very thick positive paints such as
- AZ® nLOF 2000
- AZ® 15 nXT
- AZ® 40 XT
TechniStrip® NI555 was developed not only to remove cross-linked coatings, but also to dissolve without leaving any residue. This prevents contamination of the pool and filter by paint particles and skins, which can occur with standard strippers.
TechniStrip® MLO 07
TechniStrip® M LO 07 is a for alkaline sensitive materials like Al suitable, highly efficient remover for positive and negative resists used in the areas IR, III/V, MEMS, Photonic, TSV mask and solder bumping. TechniStrip® MLO 07 is compatible with Cu, Al, Sn/Ag, Alumina and a variety of organic substrates.
TechniStrip® NF52
The TechniStrip ® NF52 is a very efficient remover for negative varnishes (liquid varnishes as well as dry films). Due to its composition and special additives compatible with metals commonly used for BEOL interconnects or WLP bumping.
TechniStrip® Micro D2
TechniStrip® Micro D2 Versatile stripper for lift-off processes or generally for dissolving positive and negative varnishes. Its composition is aimed at improving compatibility with many metals and III/V semiconductors.
Further information:
AZ 100 Remover - 5.00 l
1000100
AZ® 100 Remover
Universal Photoresist Stripper
General Information
AZ®100 Remover is based on solvent and amine (alkaline). AZ®100 Remover is used for photoresist stripping with low attack to aluminium. Low hazard is achieved by the use of ethanol amine.
Low evaporation rate allows the use at elevated temperatures (up to 80°C), high efficiency (>3000 wafer per litre) helps saving costs. Where attack to aluminium is of no concern, it may even be diluted with water.
AZ®100 Remover is not compatible with AZ® nLof 2070 (AZ® nLof 2000 series) resists and other heavily cross linked resists.
Product Properties
Density (at 25°C): 0.955 kg/l
Color (Alpha): max. 20
Flashpoint (AP): 72°C
Normality (potentiometric): 3.1 mol/l
Boiling range: 159-194°C
Further Information
MSDS:
Safety Data Sheet AZ® 100 Remover english
Sicherheitsdatenblatt AZ® 100 Remover german
TDS:
Technical Data Sheet AZ® 100 Remover english
Application Notes:
Photoresist removal english
Fotolack entfernen german
AZ Remover 910 - 5.00 l
1000910
AZ® Remover 910
Organic Solvent Based Remover
General Information
AZ® Remover 910 is designed to strip and dissolve positive and negative-tone, chemically amplified and DNQ/Novolak resists. It is a solvent based product that contains acids and is therefore acidic. The formulation is EH&S friendly, it contains no NMP, DMAC, DMSO and no TMAH and it is amine free.
It is especially suited for our cross-linking negative resists such as AZ® nLof 2070, 2035 and 2020, the AZ® nLof 5110 and the AZ® 15nXT series resists.
Compatibility
It is suitable for processes where sensitive metals and other materials are exposed.
It shows low etch rates on:
Al, Cu, Ti, W, TiW, TiN, Sn, Ni
Si, SiO2
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Further Information
MSDS:
Safety Data Sheet AZ® Remover 910 english
Sicherheitsdatenblatt AZ® Remover 910 german
TDS:
Technical Data Sheet AZ® Remover 910 english
Application Notes:
Photoresist Removal english
Entfernen von Fotolack german
AZ Remover 920 - 5.00 l
1000920
AZ® Remover 920
Organic Solvent Based Remover
General Information
AZ® Remover 920 is designed for fast delamination and dissolution of photoresist patterns while maintaining broad compatibility with device substrates and metal films.
Merck’s proprietary solvent and additive blend is environmentally friendly and fully compliant with the European Union’s REACH regulatory code. Compatible with most AZ® positive resists (complete dissolution) and most AZ® negative resists (dissolution or delamination depending on degree of cross-linking).
Product Properties
Flashpoint: 84.4°C
Viscosity (20°C): 1.84 cSt
Boiling point: 188°C
Density (at 25°C): 1.084 g/cm3
Compatibility
Metals: no attack on Al, Cu, Ti, W, TiW, TiN, Sn, Ni
Substrates: Si, SiO2, GaAs
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Main Features
Fast delamination of photoresist patterns
Broad compatibility
Environmentally friendly
Some Applications
Bulk Photoresist Removal
Metal Lift-off Lithography
Cu Pillar Metallization Cleans
RDL Metallization Cleans
Delamination of Heavily Cured Photoresist Patterns & Organic Residues
Further Information
MSDS:
Safety Data Sheet AZ® Remover 920 english
Sicherheitsdatenblatt AZ® Remover 920 german
TDS:
Technical Data Sheet AZ® Remover 920 english
Application Notes:
Photoresist Removal english
Entfernen von Fotolack german
DMSO - 2.50 l - ULSI
MDMU1025
DMSO
Dimethyl Sulfoxide
General Information
Due to its low vapour pressure and its water solubility, DMSO is an excellent stripper for resists respectively Lift-off media and is a non-toxic substitute for the NMP, which has been classified as toxic since a while. The optional addition of Cyclopentanone or MEK increases the performance of the stripper for certain applications and significantly lowers the melting point of pure DMSO.
NOTE:
The solvent DMSO (dimethyl sulfoxide) has a melting point just below room temperature, so it can possi¬bly freeze in storage in cooler rooms. Thawing may require several days, but afterwards the product can still be used as it is.
For more details please download the info letter.
Product Properties
Density: 1.1 g/cm3
Melting point: 18°C
Boiling point: 189°C
Flash point: 87°C
Vapour pressure @ 20°C: 0.56 hPa
DMSO Molecule
Further Information
MSDS:
Safety Data Sheet DMSO (ULSI) english
Sicherheitsdatenblatt DMSO (ULSI) german
Specs:
Specs DMSO (ULSI)
Application Notes:
Solvents: Theory and Application english
Lösemittel: Theorie und Anwendung german
Photoresist Removal english
Fotolack entfernen german
Further Information about Processing
TechniClean CA25 - 5.00 l - MOS
TTCA25M5
TechniCleanTM CA25
Post Etch Residue (PER) Remover
General Information
TechniCleanTM CA25 is a semi-aqueous proprietary blend formulated to address post etch residue (PER) removal for all interconnect and technology nodes. Extremely efficient in the rapid and selective removal of organo-metal oxides from Al, Cu, Ti, TiN, W and Ni.
Product Properties
Flashpoint: > 120°C
Water Solubility: Totally miscible
Viscosity (20°C): < 3 cP
Boiling point: 100°C
Density (at 20°C): 1.041 g/cm3
Compatibility
It removes organo-metal oxides from:
Metals: no attack on Al, Cu, Ti, TiN, W, Ni
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Main Features
Unmatched PER cleaning versatility
High efficiency at low temperature
No intermediary rinse
Low environmental impact (fluoride, amine, hydroxylamine and catechol free)
Cost efficiency
Further Information
MSDS:
Safety Data Sheet TechniClean™CA25 (MOS) english
Sicherheitsdatenblatt TechniClean™CA25 (MOS) german
TDS:
Technical Data Sheet TechniClean™CA25 (MOS) english
Specs:
Specs TechniClean™CA25 (MOS)
Application Notes:
Photoresist Removal english
Fotolack entfernen german
Further Information about Processing
TechniStrip Micro D2 - 5.00 l - VLSI
TPD2V500
TechniStrip® Micro D2
Remover with high metal and material compatibility
General Information
TechniStrip® Micro D2 is a versatile stripper which is dedicated to address resin lift off and dissolution on negative and positive tone resist. The organic mixture has the particularity to offer high metal and material compatibility allowing to be used on all stacks and particularly on sensitive substrates.
TechniStrip® Micro D2 is a very well suited substitute for the NMP and DMSO/Amine strippers, that are regarded as toxic since a while, or which are corrosive to some metals.
Product Properties
Flashpoint: 87°C
Water Solubility: Fully miscible
Boiling point: 190°C
Density (at 20°C): 1.113 g/cm3
Compatibility
Metals: no attack on Al, Cu, Ni, Ta, TaN, Ti, TiN, TiW, Au, Ag, Sn
Substrates: SiO2, Si
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Some Applications
Positive resin stripping
Negative tone resist lift off
Lift off process to pattern metals and dielectric layers
Reworking
Adhesive, glue cleaner
Further Information
MSDS:
Safety Data TechniStrip Micro D2 (VLSI) english
Sicherheitsdatenblatt TechniStrip Micro D2 (VLSI) german
TDS:
Technical Data Sheet TechniStrip Micro D2 (VLSI) english
Specs:
Specs TechniStrip Micro D2 (VLSI)
Application Notes:
Photoresist Removal english
Fotolack entfernen german
Further Information about Processing
TechniStrip Micro D350 - 2.50 l - ULSI
TD350U1025
Bottle size:
2.50 l
TechniStrip Micro D350
DMSO-based Stripper
General Information
TechniStrip® Micro D350 is a DMSO-based stripper and is a very well suited non-toxic substitute for the NMP that is regarded as toxic since a while. As a stripper or as lift off media, TechniStrip® Micro D350 can be regarded as a non toxic alternative to NMP. Mixtures with Cyclopentanone or with MEK even increase the strip performance of this product.
NOTE:
The solvent TechniStrip® Micro D350 has a melting point just below room temperature, so it can possi¬bly freeze in storage in cooler rooms. Thawing may require several days, but afterwards the product can still be used as it is.
For more details please download the info letter.
Further Information
MSDS:
Safety Data Sheet TechniStrip Micro D350 (ULSI) english
Sicherheitsdatenblatt TechniStrip Micro D350 (ULSI) german
TDS:
Technical Data Sheet TechniStrip Micro D350 (ULSI) english
Specs:
Specs TechniStrip Micro D350 (ULSI)
Application Notes:
Photoresist Removal english
Fotolack entfernen german
Further Information about Processing
TechniStrip MLO-07 - 5.00 l - MOS
TPMLO075
TechniStrip® MLO07
DMSO-based Stripper
General Information
TechniStrip® MLO 07 is a highly efficient positive and negative tone photoresist remover used for IR, III/V, MEMS, Photonic, TSV mask, solder bumping and hard disk stripping applications. TechniStrip® MLO 07 is developed to address high dissolution performance and high material compatibility on Cu, Al, Sn/Ag, Alu¬mina and common organic substrates.
Product Properties
Flashpoint: 94°C
Water Solubility: Fully miscible
Boiling point: 189°C
Density (at 20°C): 1.093 g/cm3
Compatibility
Metals: no attack on Al, Cu, Ni, Ta, TaN, Ti, TiN, TiW, Au, Ag, Sn
Substrates: Si, SiO2
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Main Features
Improved performance over NMP in many applications
Provides dissolution for many positive resists
High material compatibility on Cu, Al, Sn, Ag, alumina, magnetic alloys and organic substrates
Ideally suited for gold and aluminum metal lift-off
Formulated to minimize the formation of metal fragments during the lift-off process
Some Applications
Metal Lift-Off Process
Further Information
MSDS:
Safety Data Sheet TechniStrip MLO-07 (MOS) english
Sicherheitsdatenblatt TechniStrip MLO-07 (MOS) german
TDS:
Technical Data Sheet TechniStrip MLO-07 (MOS) english
Specs:
Specs TechniStrip MLO-07 (MOS)
Application Notes:
Photoresist Removal english
Fotolack entfernen german
Further Information about Processing
TechniStrip NF26 - 5.00 l - MOS
TPNF2650
TechniStrip™ NF26
Dry Film Remover
General Information
TechniStrip™ NF26 is a highly effective negative tone photoresist remover used mainly for TSV mask and solder bumping applications.
Developed to address laminated photo-resins (dry-film resists) and liquid resins, the novel cleaning formulation TMAH-based showed high dissolution performance compared to standard TMAH-based blends. Additional advantages of the TechniStrip™ NF26 are its very high material compatibility compared to standard TMAH-based solutions. The intrinsic nature of the additives and solvent make the blend totally compatible with metals used throughout the BEOL interconnects to WLP bumping applications.
Product Properties
Flashpoint: 90°C
Viscosity (20°C): < 2cP
Water Solubility: Totally miscible
Boiling point: 189°C
Density (at 20°C): 1.02 g/cm3
Compatibility
Metals: no attack on Al, Cu, Ni, Ta, TaN, Ti, TiN, TiW, Ag, Sn
Substrates: Si, SiO2
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Main Features
Very high stripping rate, > 10µm/min
Great resin dissolution efficiency of dry film
Bath life up to 72 hours @ 70°C
Total metal compatibility, < 2 A/min @ 60°C
Complete water miscibility
Further Information
MSDS:
Safety Data Sheet TechniStrip NF26 (MOS) english
Sicherheitsdatenblatt TechniStrip NF26 (MOS) german
TDS:
Technical Data Sheet TechniStrip NF26 (MOS) english
Specs:
Specs TechniStrip NF26 (MOS)
Application Notes:
Photoresist Removal english
Fotolack entfernen german
Further Information about Processing
TechniStrip NF52 - 5.00 l - MOS
TPNF5250
TechniStrip™ NF52
Highly Effective Remover
General Information
TechniStrip™ NF52 is a highly effective remover for negative resists (liquid resists as well as dry films). The intrinsic nature of the additives and solvent make the blend totally compatible with metals used throughout the BEOL interconnects to WLP bumping applications.
Product Properties
Flashpoint: 90°C
Viscosity (20°C): < 2cP
Water Solubility: Totally miscible
Boiling point: 189°C
Density (at 20°C): 1.08 g/cm3
Compatibility
Metals: no attack on Al, Cu, Ni, Ta, TaN, Ti, TiN, TiW, Ag, Sn
Substrates: Si, SiO2
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Main Features
Very high stripping rate, >10µm/min
Great resin dissolution efficiency of dry film
Bath life up to 72 hours @ 70°C
Total metal compatibility, <2A/min @60°C
Complete water miscibility
Further Information
MSDS:
Safety Data Sheet TechniStrip NF52 (MOS) english
Sicherheitsdatenblatt TechniStrip NF52 (MOS) german
TDS:
Technical Data Sheet TechniStrip NF52 (MOS) english
Specs:
Specs TechniStrip NF52 (MOS)
Application Notes:
Photoresist Removal english
Fotolack entfernen german
Further Information about Processing
TechniStrip NI555 - 5.00 l - MOS
TNI555M5
TechniStrip® NI555
Stripper
General Information
TechniStrip® NI555 was developed to address fast and complete photoresist film dissolution thus avoiding filter clogging and subsequent insoluble resin debris deposition encountered with most of standard stripping solutions.
A cross-linked AZ® 15 nXT film peels from the substrate in DMSO-, NMP- or TMAH-based strippers, while TechniStrip® NI555 completely dissolves the resist film after 20 minutes.
Product Properties
Flashpoint: 89°C
Water Solubility: Totally miscible
Boiling point: 190°C
Density (at 20°C): 0.978 g/cm3
Compatibility
TechniStrip® NI555 is a powerful remover for Novolak-based negative resists and ultrathick positive resists such as:
AZ® nLOF200 series
AZ® 15nXT
AZ® 40XT
NOTE: Please note that the TechniStrip® NI555 is not compatible with GaAs**, which can cause problems in the application.
Metals: attacked GaAs
Metals: no attack on Al, Cu, Ni, Ta, TaN, Ti, TiN, TiW, Au, Ag, Sn, Pd
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Further Information
MSDS:
Safety Data Sheet TechniStrip NI555 (MOS) english
Sicherheitsdatenblatt TechniStrip NI555 (MOS) german
TDS:
Technical Data Sheet TechniStrip NI555 (MOS) english
Specs:
Specs TechniStrip NI555 (MOS)
Application Notes:
Photoresist Removal english
Fotolack entfernen german
Further Information about Processing
TechniStrip P1316 - 5.00 l - MOS
TP1316M5
TechniStrip® P1316
High Performance Remover
General Information
TechniStrip® P1316 is a remover with very strong stripping power for Novolak-based resists (including all AZ® positive resists), epoxy-based coatings, polyimides and dry films. At a typical application temperatures around 75°C TechniStrip® P1316 may dissolve cross-linked resists without residue also, e.g. through dry etching or ion implantation. The remover can also be used in spraying processes.
Product Properties
Flashpoint: 93°C
Viscosity (20°C): < 2 cP
Water Solubility: Totally miscible
Boiling point: 189°C
Density (at 20°C): 1.03 g/cm3
Compatibility
Metals: attacked Al, Cu, Au
Metals: no attack on Ta, Ni, Ti, TiN
Substrates: Si, SiO2
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Some Applications
TechniStrip® P1316 is a powerful NMP-free remover for:
Novolak-based positive resists such as all positive AZ® resists
Epoxy-based resists
Polyimides, bonding glues
Dry films
Further Information
MSDS:
Safety Data Sheet TechniStrip P1316 (MOS) english
Sicherheitsdatenblatt TechniStrip P1316 (MOS) german
TDS:
Technical Data Sheet TechniStrip P1316 (MOS) english
Specs:
Specs TechniStrip P1316 (MOS)
Application Notes:
Photoresist Removal english
Fotolack entfernen german
Further Information about Processing
TechniStrip P1331 - 5.00 l - MOS
TP1331M
TechniStrip® P1331
High Performance Remover
General Information
TechniStrip® P1331 is a remover with very strong stripping power for Novolak-based resists (including all AZ® positive resists), epoxy-based coatings, polyimides and dry films. At a typical application temperatures around 75°C TechniStrip® P1331 may dissolve cross-linked resists without residue also, e.g. through dry etching or ion implantation. The remover can also be used in spraying processes.
TechniStrip® P1331 is, for alkaline sensitive materials, an alternative to the P1316.
Product Properties
Flashpoint: 100,5°C
Viscosity (20°C): < 2 cP
Water Solubility: Totally miscible
Boiling point: 189°C
Density (at 20°C): 1.109 g/cm3
Compatibility
Metals: attacked Al, Cu, Au
Metals: no attack on Ta, Ni, Ti, TiN
Substrates: Si, SiO2
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Main Features
Very high stripping rate, >10µm/min
Great resin dissolution efficiency
Enhanced resin loading capacity, > 2 times to standard POR
THB121N, 21µm, 8” wafer- up to 15 wafers/liter
Bath life up to 72 hours @ 70°C
Total metal compatibility, <10A/min @60°C
Complete water miscibility
Safety: labeled irritant
Some Applications
TechniStrip® P1316 is a powerful NMP-free remover for:
Novolak-based positive resists such as all positive AZ® resists
Epoxy-based resists
Polyimides, bonding glues
Dry films
Further Information
MSDS:
Safety Data Sheet TechniStrip P1331 (MOS) english
Sicherheitsdatenblatt TechniStrip P1331 (MOS) german
TDS:
Technical Data Sheet TechniStrip P1331 (MOS) english
Specs:
Specs TechniStrip P1331 (MOS)
Application Notes:
Photoresist Removal english
Fotolack entfernen german
Further Information about Processing