POSITIVE RESISTS

AZ® 10XT (220CPS) Thick Resists for High Resolution   General Information Compared to the AZ® 4500 series, the AZ® 10XT resists have a lower optical absorption. This simplifies the exposure of (also very) thick resist films. Therefore, in combination with the missing g-line sensitivity, the AZ® 10XT series needs a higher exposure time under broadband condition, and reveals a lower development rate as compared to AZ® 4500 films processed under the same conditions. On the other hand, the AZ® 10XT shows a very high aspect ratio and resolution. For lower resist film thicknesses we recommend a dilution with PGMEA = AZ® EBR Solvent. The following resist film thicknesses refer to 4000 rpm under standard conditions: 4.0 µm: 100g AZ® 10XT + 13g PGMEA 3.0 µm: 100g AZ® 10XT + 23g PGMEA 2.0 µm: 100g AZ® 10XT + 42g PGMEA 1.5 µm: 100g AZ® 10XT + 55g PGMEA 1.0 µm: 100g AZ® 10XT + 88g PGMEA The AZ® 10XT is a PFOS-free alternative to the AZ® 9260, which was discontinued in 2019. Viscosity and process parameters are identical to the former AZ® 9260.   3.0 µm lines in 12 µm thick AZ® 10XT Ultratech 1500 Exposure, AZ® 400K Developer 1:4 (260s spray)   Product Properties Good resist adhesion to all common substrate materials Compatible with all common developers (KOH- or TMAH-based) Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline) h- and i-line sensitive (approx. 320 - 410 nm) Resist film thickness range approx. 5 - 30 µm Developers The recommended developers for the AZ® 10XT photoresist are AZ® 400K 1:4 or AZ® 726 MIF. In case of very thick resist films, a rather strong developer concentration such as AZ® 400K 1:3.5 - 1:3.0 might be reasonable for required short development times. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals. Thinning/ Edge Bead Removal We recommend for thinning the AZ® EBR Solvent. Further Information MSDS: Safety Data Sheet AZ® 10XT (220cps) english Sicherheitsdatenblatt AZ® 10XT (220cps) german TDS: Technical Data Sheet AZ® 10XT (220cps) english Application Notes: Further Information about Photoresist Processing

AZ® 10XT (520CPS) Thick Resists for High Resolution   General Information Compared to the AZ® 4500 series, the AZ® 10XT resists have a lower optical absorption. This simplifies the exposure of (also very) thick resist films. Therefore, in combination with the missing g-line sensitivity, the AZ® 10XT series needs a higher exposure time under broadband condition, and reveals a lower development rate as compared to AZ® 4500 films processed under the same conditions. On the other hand, the AZ® 10XT shows a very high aspect ratio and resolution. For lower resist film thicknesses we recommend a dilution with PGMEA = AZ® EBR Solvent. The following resist film thicknesses refer to 4000 rpm under standard conditions: 4.0 µm: 100g AZ® 10XT + 13g PGMEA 3.0 µm: 100g AZ® 10XT + 23g PGMEA 2.0 µm: 100g AZ® 10XT + 42g PGMEA 1.5 µm: 100g AZ® 10XT + 55g PGMEA 1.0 µm: 100g AZ® 10XT + 88g PGMEA The AZ® 10XT is a PFOS-free alternative to the AZ® 9260, which was discontinued in 2019. Viscosity and process parameters are identical to the former AZ® 9260.   3.0 µm lines in 12 µm thick AZ® 10XT Ultratech 1500 Exposure, AZ® 400K Developer 1:4 (260s spray)   Product Properties Good resist adhesion to all common substrate materials Compatible with all common developers (KOH- or TMAH-based) Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline) h- and i-line sensitive (approx. 320 - 410 nm) Resist film thickness range approx. 5 - 30 µm Developers The recommended developers for the AZ® 10XT photoresist are AZ® 400K 1:4 or AZ® 726 MIF. In case of very thick resist films, a rather strong developer concentration such as AZ® 400K 1:3.5 - 1:3.0 might be reasonable for required short development times. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals. Thinning/ Edge Bead Removal We recommend for thinning the AZ® EBR Solvent. Further Information MSDS: Safety Data Sheet AZ® 10XT (520cps) english Sicherheitsdatenblatt AZ® 10XT (520cps) german TDS: Technical Data Sheet AZ® 10XT (520cps) english Application Notes: Further Information about Photoresist Processing

AZ® 12XT-20PL-10 Chemically Amplified Positive Tone Photoresists   General Information AZ® 12XT for 5 - 15 µm Resist Film Thickness (i-line) The AZ® 12XT is a chemically amplified thick positive resist with superior photospeed and aspect ratio characterized by its excellent environmental stability and suitability for plating and RIE etc applications. Even for very high resist film thickness AZ® 12XT requires only short softbake times, no delay for rehydration, very small exposure doses due to its chemical amplification and reveals a high development rate.   AZ® 12XT - 2.4mm lines at 10mm film thickness Product Properties High thermal stability Compatible with all common TMAH based developers Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents, or aqueous alkaline) i-line sensitive (approx. 320 - 390 nm) Resist film thickness range approx. 5 - 20 µm Developers We recommend the TMAH-based developers such as the AZ® 326 MIF, AZ® 726 MIF or AZ® 2026 MIF developer. Removers The AZ® 12XT resists are compatible with industry standard solvent based removers such as AZ® 920 Remover, AZ® 100 Remover and DMSO based strippers. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal AZ® EBR Solvent or AZ® EBR70/30 Solvent. Further Information MSDS: Safety Data Sheet AZ® 12XT 20PL-10 english Sicherheitsdatenblatt AZ® 12XT 20PL-10 german TDS: Technical Data Sheet AZ® 12XT 20PL-10 english Application Notes: Further Information about Photoresist Processing

AZ® 12XT-20PL-15 Chemically Amplified Positive Tone Photoresists   General Information AZ® 12XT for 5 - 15 µm Resist Film Thickness (i-line)The AZ® 12XT is a chemically amplified thick positive resist with superior photospeed and aspect ratio characterized by its excellent environmental stability and suitability for plating and RIE etc applications. Even for very high resist film thickness AZ® 12XT requires only short softbake times, no delay for rehydration, very small exposure doses due to its chemical amplification and reveals a high development rate.   AZ® 12XT - 2.4mm lines at 10mm film thickness Product Properties High thermal stability Compatible with all common TMAH based developers Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents, or aqueous alkaline) i-line sensitive (approx. 320 - 390 nm) Resist film thickness range approx. 5 - 20 µm Developers We recommend the TMAH-based developers such as the AZ® 326 MIF, AZ® 726 MIF or AZ® 2026 MIF developer. Removers The AZ® 12XT resists are compatible with industry standard solvent based removers such as AZ® 920 Remover, AZ® 100 Remover and DMSO based strippers. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal AZ® EBR Solvent or AZ® EBR70/30 Solvent. Further Information MSDS: Safety Data Sheet AZ® 12XT 20PL-15 english Sicherheitsdatenblatt AZ® 12XT 20PL-15 german TDS: Technical Data Sheet AZ® 12XT 20PL-15 english Application Notes: Further Information about Photoresist Processing

AZ® 1505 Positive Thin Resists for Wet Etching   General Information The AZ® 1500 photoresist series yields an improved adhesion for all common wet etching processes. The lateral resolution depends on the resist film thickness and reaches down to sub-µm. The high resolution and adhesion of the AZ® 1505 make this resist a commonly used resist mask for Cr etching in photo mask production. At 4000 rpm, a coating thickness of approx. 500 nm can be attained. A coating thickness of approx. 400 - 800 nm can also be achieved by varying the spin speed. Product Properties Improved resist adhesion to all common substrate materials Broad process parameter window for stable and reproducible litho-processes High development rate Compatible with all common developers (NaOH-, KOH- or TMAH-based) Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range approx. 0.4 – 0.8 µm Developers If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based **AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent. Further Information MSDS: Safety Data Sheet AZ® 1505 Photoresist english Sicherheitsdatenblatt AZ® 1505 Fotolack german TDS: Technical Data Sheet AZ® 1505 Photoresist english Application Notes: Further Information about Photoresist Processing

AZ® 1512 HS Positive Thin Resists for Wet Etching   General Information The AZ® 1500 photoresist series yields an improved adhesion for all common wet etching processes. The lateral resolution depends on the resist film thickness and reaches down to sub-µm. The very high photo active compound concentration of the AZ® 1512 HS maximises the resist contrast (very high development rate, minimized dark erosion). At 4000 rpm, a coating thickness of approx. 1.2 µm can be attained. A coating thickness of approx. 1.0 – 1.8 µm can also be achieved by varying the spin speed. Product Properties Improved resist adhesion to all common substrate materials Broad process parameter window for stable and reproducible litho-processes High development rate Compatible with all common developers (NaOH-, KOH- or TMAH-based) Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range approx. 1.0 – 1.8 µm Developers If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF** developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent. Further Information MSDS: Safety Data Sheet AZ® 1512 HS Photoresist english Sicherheitsdatenblatt AZ® 1512 HS Fotolack german TDS: Technical Data Sheet AZ® 1512 HS Photoresist english Application Notes: Further Information about Photoresist Processing

AZ® 1514H Positive Thin Resists for Wet Etching   General Information The AZ® 1500 photoresist series yields an improved adhesion for all common wet etching processes. The lateral resolution depends on the resist film thickness and reaches down to sub-µm. A special resin further improves the resist adhesion on most common (metallic) substrates. Resist film thickness at 4000 rpm approx. 1.4 µm, via variations of the spin speed approx. 1.1 - 2 µm attainable. Product Properties Improved resist adhesion to all common substrate materials Broad process parameter window for stable and reproducible litho-processes High development rate Compatible with all common developers (NaOH-, KOH- or TMAH-based) Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents, or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range approx. 1.1 µm – 2.0 µm Developers If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based **AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent. Further Information MSDS: Safety Data Sheet AZ® 1514 H Photoresist english Sicherheitsdatenblatt AZ® 1514 H Fotolack german TDS: Technical Data Sheet AZ® 1514 H Photoresist english Application Notes: Further Information about Photoresist Processing

AZ® 1518 Positive Thin Resists for Wet Etching   General Information The AZ® 1500 photoresist series yields an improved adhesion for all common wet etching processes. The lateral resolution depends on the resist film thickness and reaches down to sub-µm. The elevated resist film thickness of the AZ® 1518 improve the stability of the resist mask for wet etching processes. At 4000 rpm, a coating thickness of approx. 1.8 µm can be attained. A coating thickness of approx. 1.5 – 3.0 µm can also be achieved by varying the spin speed. Product Properties Improved resist adhesion to all common substrate materials Broad process parameter window for stable and reproducible litho-processes High development rate Compatible with all common developers (NaOH-, KOH- or TMAH-based) Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range approx. 1.5 µm – 3.0 µm Developers If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent. Further Information MSDS: Safety Data Sheet AZ® 1518 Photoresist english Sicherheitsdatenblatt AZ® 1518 Fotolack german TDS: Technical Data Sheet AZ® 1518 Photoresist english Application Notes: Further Information about Photoresist Processing

AZ® 3DT-102M-15 Chemically Amplified Positive Photoresist   General Information AZ® 3DT-102M-15 is a chemically amplified positive tone photoresist with a very high aspect ratio. It is intended for the use as a mask for dry etching, ion implantation, RDL and electroplating applications (Cu-compatible). It can be used with i-line steppers as well as with conventional mask aligners. The AZ® 3DT-102M-15 is intended for a thickness range of 8 - 20 µm. Product Properties Steep sidewalls Compatible with-copper plating-processes For TSV, implantation, RDL, electroplating, dry etching Chemically amplified à PEB obligatory Compatible with most photoresist stripper (e.g. AZ® 100 Remover, organic solvent based or alkaline) i-line sensitive (can be used for broadband exposure as well) Resist film thickness range ca. 8 - 20 µm Developers The recommended developers are AZ® 326 MIF or AZ® 726 MIF for the photoresist AZ® 3DT-102M-15. Removers The recommended strippers for the AZ® 3DT-102M-15 are AZ® 920 Remover, AZ® 100 Remover, TechniStrip P1316, TechniStrip P1331 and TechniStrip MLO07. Thinning/ Edge Bead Removal We recommend for thinning the AZ® EBR Solvent. Further Information MSDS: Safety Data Sheet AZ® 3DT-102M-15 Photoresist english Sicherheitsdatenblatt AZ® 3DT-102M-15 Fotolack german TDS: Technical Data Sheet AZ® 3DT-102M-15 Photoresist english Application Notes: Further Information about Photoresist Processing

AZ® 40XT Chemically Amplified Thick Photoresist   General Information AZ® 40XT for 15 - 100 µm Resist Film Thickness (i-line) The chemically amplified AZ® 40 XT is an ultra thick resist whose high viscosity allows very large resist film thicknesses via a single coating. It does not require rehydration, requires low light doses, releases no nitrogen during exposure and develops very rapidly, thus permitting significantly shorter process times compared to standard thick resist films. However, the AZ® 40XT necessarily requires a Post Exposure Bake to be developed. Remark: The maximum soft bake temperature must not be applied abruptly, in order to prevent the formation of bubbles in the resist film. We recommend either the usage of a proximity hotplate, or a temperature ramp on a contact hotplate. The correct temperature ramps are crucial for bubble free resist processing with this resist.   Lines and spaces varying from 100 to 10 µm with a 40 µm thick AZ® 40XT at 400 mJ/cm2 exposure dose Product Properties 15 - 100 µm resist film thickness via single-coating Aqueous alkaline developers (e.g. AZ® 326/726/2026 MIF) No rehydration required, no N2-formation during exposure Very good adhesion, very steep resist sidewalls Can be stripped wet- and dry-chemically Optimized for electroplating, wet- and dry etching i-line sensitive (approx. 330 – 390 nm) Developers We recommend common TMAH-based developers such as the AZ® 326 MIF, AZ® 726 MIF or AZ® 2026 MIF developer. Removers AZ® 40XT photoresist is compatible with industry standard solvent based removers (e.g. NMP, DMSO, AZ® 920 Remover or Technistrip MLO07). Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal AZ® EBR Solvent or PGMEA. AZ® EBR70/30 Solvent is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® 40XT Photoresist english Sicherheitsdatenblatt AZ® 40XT Fotolack german TDS: Technical Data Sheet AZ® 40XT Photoresist english Application Notes: Further Information about Photoresist Processing

AZ® 4533 Thick Resists with Optimized Adhesion   General Information The AZ® 4500 series (AZ® 4533 and AZ® 4562) are positive thick resists with optimized adhesion for common wet etching and plating processes. The AZ® 4500 series follows the AZ® 1500 series in the attainable and processable resist film thickness range. AZ® 4533 (3.3 µm resist film thickness at 4000 rpm) and AZ® 4562 (6.2 µm) have a lower photoinitiator con¬centration compared to thin resists. This makes it possible to process thick resist films over 10 µm without N2 bubble formation, but at the expense of a significantly lower development rate. Product Properties Optimized resist adhesion to all common substrate materials Broad process parameter window for stable and reproducible litho-processes Compatible with all common developers (KOH- or TMAH-based) Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents, or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range approx. 2.5 - 5 µm Developers If metal ion containing developers can be used the KOH-based AZ® 400K in a 1:4 dilution or the finish diluted version AZ® 400K 1:4 (for higher resist film thicknesses 1:3.5 - 1:3 diluted possible) is a suited developer. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 2026 MIF developer (undiluted). Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals. Further Information MSDS: Safety Data Sheet AZ® 4533 Photoresist english Sicherheitsdatenblatt AZ® 4533 Fotolack german TDS: Technical Data Sheet AZ® 4533 Photoresist english Application Notes: Further Information about Photoresist Processing

AZ® 4562 Thick Resists with Optimized Adhesion   General Information The AZ® 4500 series (AZ® 4533 and AZ® 4562) are positive thick resists with optimized adhesion for common wet etching and plating processes. The AZ® 4500 series follows the AZ® 1500 series in the attainable and processable resist film thickness range. AZ® 4533 (3.3 µm resist film thickness at 4000 rpm) and AZ® 4562 (6.2 µm) have a lower photoinitiator con¬centration compared to thin resists. This makes it possible to process thick resist films over 10 µm without N2 bubble formation, but at the expense of a significantly lower development rate. A resist film thicknes up to 30 µm can be achieved by single-coating with adjusted spin profiles (short spin times at medium spin speed). Higher layer thicknesses can be achieved by multiple coating. Higher film thickness attainable with multiple coating. Please note: Resist Film Thicknesses > 30 µm Generally, the AZ® 4562 can be coated and processed up to 30 µm and beyond. However, softbake, rehydration, exposure and development become very time-consuming in this thickness range. Additionally, even the rather transparent AZ® 4562 photoresist may form N2-bubbles during exposure when applied too thick. Therefore, for resist film thicknesses > 20 µm, we strongly recommend the chemically amplified AZ® 40XT. Product Properties Optimized resist adhesion to all common substrate materials Broad process parameter window for stable and reproducible litho-processes Compatible with all common developers (KOH- or TMAH-based) Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents, or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range approx. 5 - 30 µm Developers If metal ion containing developers can be used the KOH-based AZ® 400K in a 1:4 dilution or the finish diluted version AZ® 400K 1:4 (for higher resist film thicknesses 1:3.5 - 1:3 diluted possible) is a suited developer. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 2026 MIF developer (undiluted). Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal AZ® EBR Solvent. Further Information MSDS: Safety Data Sheet AZ® 4562 Photoresist english Sicherheitsdatenblatt AZ® 4562 Fotolack german TDS: Technical Data Sheet AZ® 4562 Photoresist english Application Notes: Further Information about Photoresist Processing

AZ® 4999 Spray Coating   General Information AZ®4999 is a spray coating dedicated highly transparent photoresist tailored to excel on special spray coating equipment (e.g. SUSS Delta AltaSpray) where it provides defect free and conformal coatings on devices with severe topography. Thick (several to several tens of microns) and uniform resist coatings are obtained on topography such as V-grooves and trenches with optimum coverage of sharp edges. There is no accumulation of resist in trenches. The use of AZ®4999 photoresist enables high reproducibility in volume production applications. Product Properties Viscosity (at 25°C): 0.52 cSt Solids content: 4 % Absorptivity at 398 nm: 0.1 l/(g*cm) Spectral sensitivity: 310 nm – 440 nm Developers If metal ion containing developers can be used, the KOH-based AZ® 400K in a 1:4 dilution (for higher resist film thicknesses 1:3.5 - 1:3 diluted possible) is a suited developer. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 2026 MIF developer (undiluted). Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents cab be used as stripper. If the resist film is crosslinked (e. g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the products AZ® EBR Solvent or PGMEA. Further Information MSDS: Safety Data Sheet AZ® 4999 Photoresist english Sicherheitsdatenblatt AZ® 4999 Fotolack german TDS: Technical Data Sheet AZ® 4999 Photoresist english Application Notes: Further Information about Photoresist Processing

AZ® ECI 3007 High Resolution with Broad Process Window   General Information The AZ® ECI 3000 series is a modern, state-of-the-art positive resist series. The resolution potential as well as the process stability allows feature sizes close to the theoretical minimum attainable with broadband (non-DUV) resists. AZ® ECI 3000 resists are a suitable series for both wet and dry chemical processes due to their good adhesion and thermal stability. The resist are available in three viscosity grades AZ® ECI 3007 (0.7 µm resist film thickness at 4000 rpm), AZ® ECI 3012 (1.2 µm) and AZ® ECI 3027 (2.7 µm). The very high resolution potential allows lateral structural sizes down to 300 nm and opens a comparatively large and stable process window at lower resolution requirements. These resists can be developed with NaOH, KOH or TMAH based developers. Product Properties Very high resolution Optimized resist adhesion to all common substrate materials Steep resist-sidewalls and high aspect ratio for dry etching or ion implantation Broad process parameter window for stable and reproducible litho-processes Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range approx. 0.5 - 1 µm Developers If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® ECI 3007 Photoresist english Sicherheitsdatenblatt AZ® ECI 3007 Fotolack german TDS: Technical Data Sheet AZ® ECI 3000 Series english Application Notes: Further Information about Photoresist Processing

AZ® ECI 3012 High Resolution with Broad Process Window   General Information The AZ® ECI 3000 series is a modern, state-of-the-art positive resist series. The resolution potential as well as the process stability allows feature sizes close to the theoretical minimum attainable with broadband (non-DUV) resists. AZ® ECI 3000 resists are a suitable series for both wet and dry chemical processes due to their good adhesion and thermal stability. The resist are available in three viscosity grades AZ® ECI 3007 (0.7 µm resist film thickness at 4000 rpm), AZ® ECI 3012 (1.2 µm) and AZ® ECI 3027 (2.7 µm). The very high resolution potential allows lateral structural sizes down to 300 nm and opens a comparatively large and stable process window at lower resolution requirements. These resists can be developed with NaOH, KOH or TMAH based developers.   *450 nm resist lines with the AZ® ECI 3012 at approx. 1.2 µm film thickness. Product Properties Very high resolution Optimized resist adhesion to all common substrate materials Steep resist sidewalls and high aspect ratio for dry etching or ion implantation -Broad process parameter window for stable and reproducible litho-processes Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range approx. 0.9 – 1.5 µm Developers If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® ECI 3012 Photoresist english Sicherheitsdatenblatt AZ® ECI 3012 Fotolack german TDS: Technical Data Sheet AZ® ECI 3012 Photoresist english Technical Data Sheet AZ® ECI 3000 Series english Application Notes: Further Information about Photoresist Processing

AZ® ECI 3027 High Resolution with Broad Process Window   General Information The AZ® ECI 3000 series is a modern, state-of-the-art positive resist series. The resolution potential as well as the process stability allows feature sizes close to the theoretical minimum attainable with broadband (non-DUV) resists. AZ® ECI 3000 resists are a suitable series for both wet and dry chemical processes due to their good adhesion and thermal stability. The resist are available in three viscosity grades AZ® ECI 3007 (0.7 µm resist film thickness at 4000 rpm), AZ® ECI 3012 (1.2 µm) and AZ® ECI 3027 (2.7 µm). The very high resolution potential allows lateral structural sizes down to 300 nm and opens a comparatively large and stable process window at lower resolution requirements. These resists can be developed with NaOH, KOH or TMAH based developers.   900 nm resist lines with the AZ® ECI 3027 at approx. 2.7 µm resist film thickness. Product Properties Very high resolution Optimized resist adhesion to all common substrate materials Steep resist-sidewalls and high aspect ratio for dry etching or ion implantation Broad process parameter window for stable and reproducible litho-processes Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range approx. 2 – 3.5 µm Developers If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® ECI 3027 Photoresist english Sicherheitsdatenblatt AZ® ECI 3027 Fotolack german TDS: Technical Data Sheet AZ® ECI 3000 Series english Application Notes: Further Information about Photoresist Processing

AZ® IPS-6090 Positive Thick Resist   General Information AZ® IPS-6090 for 30 - 150 µm Resist Film Thickness (i-line) The chemically amplified AZ® IPS-6090 is, comparable to the AZ® 40XT, an ultra thick resist whose high viscosity allows very large resist film thicknesses via a single coating. It does not require rehydration, requires low light doses, releases no nitrogen during exposure, and develops very rapidly, thus permitting significantly shorter process times compared to standard thick resist films. However, the AZ® IPS-6090 necessarily requires a post exposure bake to be developed. It has been developed for use as patterning in semiconductors advanced packaging application (3DIC/TSV, CU Pillar, WLCSP, MEMS).   IPS 6050 (80 µm resist film thickness) Product Properties Very high resolution High aspect ratio Low exposure dose for the thickness of the film Straight pattern profile and footing free i-line sensitive, 330 – 390 nm Film thickness range: 30 - 150 µm Suited for applications such as electro chemical deposition / plating of Cu RDL in WLCSP process Electro chemical deposition / plating of Cu, Ni, Sn, SnAg, Au for 3DIC, FO and Flipchip processing Sacrificial layer for Si etching process in TSV Sacrificial layer for SiO2 or SiN etching process in CMOS sensor processing Developers We recommend AZ® 326 MIF Developer or AZ® 726 MIF Developer (this one contains surfactants) for the photoresist AZ® IPS-6090. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes, such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover or the TechniStrip P1331. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal AZ® EBR Solvent or PGMEA. AZ® EBR70/30 Solvent is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® IPS-6090 Photoresist english Sicherheitsdatenblatt AZ® IPS-6090 Fotolack german TDS: Technical Data Sheet AZ® IPS-6090 english Information AZ® IPS-6090 english Application Notes: Further Information about Photoresist Processing

AZ® MIR 701 (11CPS) High Resolution and Temperature Stability   General Information AZ® 701 MIR Series for 0.7 – 3.0 µm Resist Film Thickness (g-, h- and I-line) As thermally stable (softening point > 130°C), high-resolution positive resist, the AZ® 701 MIR (11CPS) is optimised especially for dry chemical etching of fine to very fine structures. This resist can be easily further diluted in order to attain even better resolutions, for example in applications of laser-interference lithography. We sell this resist in two different viscosities of 11CPS, 14CPS and 29CPS. It can be used with common NaOH, KOH or TMAH based developers.   300 nm resist lines attained with the AZ® 701 MIR   1.2µm structure after 130°C hardbake Product Properties Very high resolution, for 0.5 µm and 0.35 µm technology nodes High thermal stability Excellent process latitude for both line/space and contact whole applications Steep resist-sidewalls and high aspect ratio for dry etching or ion implantation Broad process parameter window for stable and reproducible litho-processes Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range AZ® MIR 701 (11CPS): approx. 0.6 – 1.0 µm Developers If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for resist film thicknesses and resolutions < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution and very thin resist layers - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 or AZ® Remover 920. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® MIR 701 (11CPS) Photoresist english Sicherheitsdatenblatt AZ® MIR 701 (11CPS) Fotolack german TDS: Technical Data Sheet AZ® MIR 701 Series english Application Notes: Further Information about Photoresist Processing

AZ® MIR 701 (14CPS) High Resolution and Temperature Stability   General Information AZ® 701 MIR Series for 0.7 – 3.0 µm Resist Film Thickness (g-, h- and I-line) As thermally stable (softening point > 130°C), high-resolution positive resist, the AZ® 701 MIR (14CPS) is optimised especially for dry chemical etching of fine to very fine structures. This resist can be easily further diluted in order to attain even better resolutions, for example in applications of laser-interference lithography. We sell this resist in three different viscosities of 11CPS, 14CPS and 29CPS. It can be used with common NaOH, KOH or TMAH based developers.   300 nm resist lines attained with the AZ® 701 MIR   1.2µm structure after 130°C hardbake Product Properties Very high resolution, for 0.5 µm and 0.35 µm technology nodes High thermal stability Excellent process latitude for both line/space and contact whole applications Steep resist-sidewalls and high aspect ratio for dry etching or ion implantation Broad process parameter window for stable and reproducible litho-processes Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range AZ® MIR 701 (14CPS): approx. 0.6 – 1.1 µm Developers If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for resist film thicknesses and resolutions < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution and very thin resist layers - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 or AZ® Remover 920. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® MIR 701 (14CPS) Photoresist english Sicherheitsdatenblatt AZ® MIR 701 (14CPS) Fotolack german TDS: Technical Data Sheet AZ® MIR 701 Series english Application Notes: Further Information about Photoresist Processing

AZ® MIR 701 (29CPS) High Resolution and Temperature Stability   General Information AZ® 701 MIR Series for 0.7 – 3.0 µm Resist Film Thickness (g-, h- and I-line) As thermally stable (softening point > 130°C), high-resolution positive resist, the AZ® 701 MIR (29CPS) is optimised especially for dry chemical etching of fine to very fine structures. This resist can be easily further diluted in order to attain even better resolutions, for example in applications of laser-interference lithography. We sell this resist in two different viscosities of 11CPS, 14CPS and 29CPS. It can be used with common NaOH, KOH or TMAH based developers.   300 nm resist lines attained with the AZ® 701 MIR   1.2µm structure after 130°C hardbake Product Properties Very high resolution, for 0.5 µm and 0.35 µm technology nodes High thermal stability Excellent process latitude for both line/space and contact whole applications Steep resist-sidewalls and high aspect ratio for dry etching or ion implantation Broad process parameter window for stable and reproducible litho-processes Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range AZ® MIR 701 (29CPS): approx. 1.2 – 2.5 µm Developers If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for resist film thicknesses and resolutions < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution and very thin resist layers - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 or AZ® Remover 920. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® MIR 701 (29CPS) Photoresist english Sicherheitsdatenblatt AZ® MIR 701 (29CPS) Fotolack german TDS: Technical Data Sheet AZ® MIR 701 (29CPS) english Technical Data Sheet AZ® MIR 701 Series english Application Notes: Further Information about Photoresist Processing

AZ® P4110 Positive Thick Resist - AZ® P4110, AZ® P4330, AZ® P4903, AZ® P4620   General Information The AZ® P4000 positive resist series with its members AZ® P4110, AZ® P4330, AZ® P4620 and AZ® P4903 have two main characteristics: An improved adhesion to all common substrates for a higher stability for e.g. wet etching or plating and a lower photo active compound concentration, which allows the application of thick and very thick resist films (approx. 1 - 30 µm). This resist series have a medium thermal stability and can be developed with common KOH or TMAH based developers. Product Properties Resist film thickness: 0.9 - 1.3 µm Steep wall profiles, high aspect ratios Sensitive to g-, h-, and i-line Recommended developers: KOH-based (e.g. AZ® 400K) or TMAH-based (e.g. AZ® 2026 MIF) Standard strippers (e.g. AZ® 100 Remover, TechniStrip P1316) Thinner and edge bead remover: AZ® EBR Solvent or PGMEA Developers If metal ion containing developers can be used the KOH-based AZ® 400K in a 1:4 dilution or the finish diluted version AZ® 400K 1:4 (for higher resist film thicknesses 1:3.5 - 1:3 diluted possible) is a suited developer. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 2026 MIF developer (undiluted). Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes, such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well in case of harsh treated or hard to remove resist residuals. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal AZ® EBR Solvent or PGMEA. AZ® EBR70/30 Solvent is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® P4110 Photoresist english Sicherheitsdatenblatt AZ® P4110 Fotolack german TDS: Technical Data Sheet AZ® P4000 Series english Information AZ® P400 Series english Application Notes: Further Information about Photoresist Processing

AZ® P4620 Positive Thick Resist - AZ® P4110, AZ® P4330, AZ® P4903, AZ® P4620   General Information The AZ® P4000 positive resist series with its members AZ® P4110, AZ® P4330, AZ® P4620 and AZ® P4903 have two main characteristics: An improved adhesion to all common substrates for a higher stability for e.g. wet etching or plating and a lower photo active compound concentration, which allows the application of thick and very thick resist films (approx. 1 - 30 µm). This resist series have a medium thermal stability and can be developed with common KOH or TMAH based developers.   AZ® P4620 (15µm holes at 24µm film thickness for Au plating) Product Properties Optimized resist adhesion to all common substrate materials Broad process parameter window for stable and reproducible litho-processes Compatible with all common developers (KOH- or TMAH-based) Compatible with all common strippers (e. g. with AZ® 100 Remover, organic solvents or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range approx. 5 - 30 µm Developers If metal ion containing developers can be used the KOH-based AZ® 400K in a 1:4 dilution or the finish diluted version AZ® 400K 1:4 (for higher resist film thicknesses 1:3.5 - 1:3 diluted possible) is a suited developer. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 2026 MIF developer (undiluted). Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes, such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well in case of harsh treated or hard to remove resist residuals. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal AZ® EBR Solvent or PGMEA. AZ® EBR 70/30 Solvent is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® P4620 Photoresist english Sicherheitsdatenblatt AZ® P4620 Fotolack german TDS: Technical Data Sheet AZ® P4620 Photoresist english Technical Data Sheet AZ® P4000 Series english Information AZ® P400 Series english Application Notes: Further Information about Photoresist Processing

AZ® P4903 Positive Thick Resist - AZ® P4110, AZ® P4330, AZ® P4903, AZ® P4620   General Information The AZ® P4000 positive resist series with its members AZ® P4110, AZ® P4330, AZ® P4620 and AZ® P4903 have two main characteristics: An improved adhesion to all common substrates for a higher stability for e.g. wet etching or plating and a lower photo active compound concentration, which allows the application of thick and very thick resist films (approx. 1 - 30 µm). This resist series have a medium thermal stability and can be developed with common KOH or TMAH based developers. Product Properties Optimized resist adhesion to all common substrate materials Broad process parameter window for stable and reproducible litho-processes Compatible with all common developers (KOH- or TMAH-based) Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range approx. 10 - 35 µm Developers If metal ion containing developers can be used the KOH-based AZ® 400K in a 1:4 dilution or the finish diluted version AZ® 400K 1:4 (for higher resist film thicknesses 1:3.5 - 1:3 diluted possible) is a suited developer. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 2026 MIF developer (undiluted). Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes, such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well in case of harsh treated or hard to remove resist residuals. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal AZ® EBR Solvent or PGMEA. AZ® EBR70/30 Solvent is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® P4903 Photoresist english Sicherheitsdatenblatt AZ® P4903 Fotolack german TDS: Technical Data Sheet AZ® P4000 Series english Information AZ® P400 Series english Application Notes: Further Information about Photoresist Processing

AZ® TFP 650 Flat Panel Display Photoresist   General Information The AZ® TFP 650 F5 resist is suitable for spin coat and extrusion coat applications excellent adhesion requirements and/or harsh etching conditions. It is designed to meet the requirements of the flat panel display industry. They are specifically optimized for a variety of applications including spin coat, extrusion coat and roller coat. These production-proven photoresists can be used with a variety of developers and removers, and they are formulated to be compatible with the underlying layers. Product Properties Ultra high photospeed Low dark film loss Optimized resist adhesion Easy removal after hardbake High resistance to harsh etchants Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range approx. 1 – 2 µm Developers We recommend the TMAH-based AZ® 726 MIF or AZ® 326 MIF (this one contains surfactants). Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents cab be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free such as AZ® 920 Remover or TechniStrip P1316 as remover. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the products AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® TFP 650 Photoresist english Sicherheitsdatenblatt AZ® TFP 650 Fotolack german TDS: Technical Data Sheet AZ® TFP 650 english Information AZ® TFP 650 english Application Notes: Further Information about Photoresist Processing