MIF DEVELOPER
Basic chemistry of the developer
Aqueous alkaline developers
Positive varnishes and the negative varnishes we sell can be developed aqueous alkaline. The corresponding developers are based either on diluted sodium hydroxide or potassium hydroxide solution or an aqueous solution of the metal ion-free organic TMAH (TetraMethylAmmoniumHydroxide). Some developers contain chemical buffers against neutralisation byCO2 to extend the service life, surface wetting agents for puddle development or additives to remove coating residues that are difficult to dissolve in the developer .
Selection criteria for developers
Compatibility with photoresists
Not every photoresist can be developed residue-free with every developer. For example, the NaOH-based AZ® 351B is less suitable for the AZ® 4500 series than KOH- or TMAH-based developers, while the AZ® 111 XFS requires the AZ® 303 as a developer. If there is a risk of unintentional partial exposure of nominally dark resist areas via scattering, diffraction or reflections when processing negative resists , the TMAH-based AZ® 2026 MIF can be used. This contains an additive for the removal of difficult to develop resist areas, which can also lead to a cleaner development image when developing positive resists, but at the expense of a higher dark removal.
Metal ion-containing or metal ion-free?
Developers containing metal ions such as the NaOH-based AZ® 351B or the KOH-based AZ® 400K are generally much cheaper than metal ion-free TMAH-based developers, with no fundamental difference in their performance or capacity. An important selection criterion for the optimal developer is therefore the question of whether metal ion-free development is required or whether metal-containing development is permitted. Freedom from metal ions is a condition, for example, if it is absolutely necessary to exclude the possibility of residual sodium or potassium ions from the developer on the substrate diffusing into the semiconductor substrate during subsequent high-temperature processes and influencing its electronic properties there as impurities.
Further Information:
> Application areas and compatibilities
> Image Reversal Resist Processing
AZ 2026 MIF Developer - 5.00 l
1002026
AZ® 2026 MIF Developer
Metal Ion-free Developers
General Information
AZ® 300 MIF, AZ® 326 MIF, AZ® 726 MIF and AZ® 2026 MIF Developers are developer formulations with 2.38 % TMAH (tetramethylammoniumhydroxide) in H2O.
The AZ® 726 MIF Developer contains additionally a surfactant for better wetting and easy to settle up of puddle development. Additionally to the wetting agent of the AZ® 726 MIF the AZ® 2026 MIF contains a scum remover for complete and scum-free removal of resist layers on the price of a slightly higher dark erosion ratio.
However, for our negative resists, such as AZ® nLof 2000 series, AZ® 15nXT series, AZ® 125nXT resists this developer shows outstanding performance. Even for a positive resist like AZ® 10XT resist it significantly reduces t-topping if this problem occurs.
AZ® 2033 MIF is 3.00 % TMAH in H2O with surfactants added for fast and homogeneous substrate wetting and further additives for removal of resist residuals (residues in certain lacquer families), but at the cost of a higher dark removal. Compared to the AZ® 2026 MIF, the normality is not 0.26 but 0.33. Thus the development rate is higher with the AZ® 2033 MIF Developer.
Further Information
MSDS:
Safety Data Sheet AZ® 2026 MIF Developer english
Sicherheitsdatenblatt AZ® 2026 MIF Developer deutsch
TDS:
Technical Data Sheet AZ® 2026 MIF Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack deutsch
AZ 2033 MIF Developer - 5.00 l
1002033
AZ® 2033 MIF Developer
Metal Ion-free Developers
General Information
AZ® 300 MIF, AZ® 326 MIF, AZ® 726 MIF and AZ® 2026 MIF Developers are developer formulations with 2.38 % TMAH (tetramethylammoniumhydroxide) in H2O.
The AZ® 726 MIF Developer contains additionally a surfactant for better wetting and easy to settle up of puddle development. Additionally to the wetting agent of the AZ® 726 MIF the AZ® 2026 MIF contains a scum remover for complete and scum-free removal of resist layers on the price of a slightly higher dark erosion ratio.
However, for our negative resists, such as AZ® nLof 2000 series, AZ® 15nXT series, AZ® 125nXT resists this developer shows outstanding performance. Even for a positive resist like AZ® 10XT resist it significantly reduces t-topping if this problem occurs.
AZ® 2033 MIF is 3.00 % TMAH in H2O with surfactants added for fast and homogeneous substrate wetting and further additives for removal of resist residuals (residues in certain lacquer families), but at the cost of a higher dark removal. Compared to the AZ® 2026 MIF, the normality is not 0.26 but 0.33. Thus the development rate is higher with the AZ® 2033 MIF Developer.
Further Information
MSDS:
Safety Data Sheet AZ® 2033 MIF Developer english
Sicherheitsdatenblatt AZ® 2033 MIF Entwickler german
TDS:
Technical Data Sheet AZ® 2033 MIF Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack german
AZ 300 MIF Developer - 5.00 l
1000300
AZ® 300 MIF Developer
Metal Ion-free Developers
General Information
AZ® 300 MIF, AZ® 326 MIF, AZ® 726 MIF and AZ® 2026 MIF Developers are developer formulations with 2.38 % TMAH (tetramethylammoniumhydroxide) in H2O.
The AZ® 726 MIF Developer contains additionally a surfactant for better wetting and easy to settle up of puddle development. Additionally to the wetting agent of the AZ® 726 MIF the AZ® 2026 MIF contains a scum remover for complete and scum-free removal of resist layers on the price of a slightly higher dark erosion ratio.
However, for our negative resists, such as AZ® nLof 2000 series, AZ® 15nXT series, AZ® 125nXT resists this developer shows outstanding performance. Even for a positive resist like AZ® 10XT resist it significantly reduces t-topping if this problem occurs.
AZ® 2033 MIF is 3.00 % TMAH in H2O with surfactants added for fast and homogeneous substrate wetting and further additives for removal of resist residuals (residues in certain lacquer families), but at the cost of a higher dark removal. Compared to the AZ® 2026 MIF, the normality is not 0.26 but 0.33. Thus the development rate is higher with the AZ® 2033 MIF Developer.
Further Information
MSDS:
Safety Data Sheet AZ® 300 MIF Developer english
Sicherheitsdatenblatt AZ® 300 MIF Entwickler german
TDS:
Technical Data Sheet AZ® 300 MIF Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack german
AZ 326 MIF Developer - 5.00 l
1000326
AZ® 326 MIF Developer
Metal Ion-free Developer
General Information
AZ® 326 MIF is a TMAH-based developer for dip or spray development, compatible with all AZ®</sup photoresists from our portfolio.
Product Features
The ready-to-use AZ® 326 MIF developer is an aqueous 2.38% TMAH solution without any additives. This makes it suitable for dip or spray development, but less for puddle development, for which the AZ® 726 MIF developer is the better choice due to its special surfactant for substrate wetting. TMAH-based developers are always used when development must be carried out metal ion free. In addition, TMAH- based developers are primarily recommended for our chemically amplified positive resists and our negative resists. For very thin resist layers (< 1 µm) or very high resolution requirements, it can be useful to dilute the AZ® 326 MIF with water (AZ® 326 MIF : water = 2:1 to a maximum of 1:1). AZ® 326 MIF attacks aluminum with an etching rate of approx. 70 nm/min. If this cannot be tolerated, the Al-compatible AZ® Developer is an alternative, which, however, is based on sodium compounds and is therefore not metal ion-free.
For standard (non chemically amplified), DNQ-based positive resists without the requirement of metal ion-free development, a KOH- or NaOH-based developer such as AZ® 400K or AZ® 351B can be considered instead of a TMAH-based developer for cost reasons. For cross-linking negative resists, AZ® 2026 MIF can prove advantageous, which promotes residue-free development with these resists through certain additives.
Further Information
Our safety data sheets and some of our technical data sheets are password-protected.
You will receive the access data after completing the form.
The access data for the data sheets are not your login data from our shop!
MSDS:
Safety Data Sheet AZ® 326 MIF Developer english
Safety Data Sheet AZ® 326 MIF Entwickler german
TDS:
Technical Data Sheet AZ® 326 MIF Developer english
Application Notes:
Development of Photoresist english
Development of Photoresist german
AZ 726 MIF Developer - 5.00 l
1000726
AZ® 726 MIF Developer
Metal Ion-free Developers
General Information
AZ® 300 MIF, AZ® 326 MIF, AZ® 726 MIF and AZ® 2026 MIF Developers are developer formulations with 2.38 % TMAH (tetramethylammoniumhydroxide) in H2O.
The AZ® 726 MIF Developer contains additionally a surfactant for better wetting and easy to settle up of puddle development. Additionally to the wetting agent of the AZ® 726 MIF the AZ® 2026 MIF contains a scum remover for complete and scum-free removal of resist layers on the price of a slightly higher dark erosion ratio.
However, for our negative resists, such as AZ® nLof 2000 series, AZ® 15nXT series, AZ® 125nXT resists this developer shows outstanding performance. Even for a positive resist like AZ® 10XT resist it significantly reduces t-topping if this problem occurs.
AZ® 2033 MIF is 3.00 % TMAH in H2O with surfactants added for fast and homogeneous substrate wetting and further additives for removal of resist residuals (residues in certain lacquer families), but at the cost of a higher dark removal. Compared to the AZ® 2026 MIF, the normality is not 0.26 but 0.33. Thus the development rate is higher with the AZ® 2033 MIF Developer.
Further Information
MSDS:
Safety Data Sheet AZ® 726MIF Developer english
Sicherheitsdatenblatt AZ® 726MIF Entwickler german
TDS:
Technical Data Sheet AZ® 726MIF Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack german