DEVELOPER
After exposure, the subsequent resist mask is present as a latent image in the photoresist: The exposed areas differ chemically from the unexposed areas. The task of the developer is to dissolve either the exposed (for positive resists) or unexposed (for negative resists) resist areas, whereby the finished resist structures are created from the latent image .
Selection criteria for developers
First of all, it must be clarified whether metal-ion-free ( MIF) must/should be developed with ready-to-use preparations or whether metal-ion-containing ( MIC) may be developed with concentrates to be diluted.
The
next selection criterion for a developer is compatibility
with the respective photoresist (see table below) or the
substrate material used.
The schematic process sequence of the exposure (above) up to the
developed resist features (below) in the processing of positive resists
(left column), negative resists (centre) and image reversal resists
(right); the latter in two possible modes. The special features of the
attainable resist profiles are not included in this scheme.
Further Information:
> Application areas and compatibilities
> Image Reversal Resist Processing
AZ 2026 MIF Developer - 5.00 l
1002026
AZ® 2026 MIF Developer
Metal Ion-free Developers
General Information
AZ® 300 MIF, AZ® 326 MIF, AZ® 726 MIF and AZ® 2026 MIF Developers are developer formulations with 2.38 % TMAH (tetramethylammoniumhydroxide) in H2O.
The AZ® 726 MIF Developer contains additionally a surfactant for better wetting and easy to settle up of puddle development. Additionally to the wetting agent of the AZ® 726 MIF the AZ® 2026 MIF contains a scum remover for complete and scum-free removal of resist layers on the price of a slightly higher dark erosion ratio.
However, for our negative resists, such as AZ® nLof 2000 series, AZ® 15nXT series, AZ® 125nXT resists this developer shows outstanding performance. Even for a positive resist like AZ® 10XT resist it significantly reduces t-topping if this problem occurs.
AZ® 2033 MIF is 3.00 % TMAH in H2O with surfactants added for fast and homogeneous substrate wetting and further additives for removal of resist residuals (residues in certain lacquer families), but at the cost of a higher dark removal. Compared to the AZ® 2026 MIF, the normality is not 0.26 but 0.33. Thus the development rate is higher with the AZ® 2033 MIF Developer.
Further Information
MSDS:
Safety Data Sheet AZ® 2026 MIF Developer english
Sicherheitsdatenblatt AZ® 2026 MIF Developer deutsch
TDS:
Technical Data Sheet AZ® 2026 MIF Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack deutsch
AZ 2033 MIF Developer - 5.00 l
1002033
AZ® 2033 MIF Developer
Metal Ion-free Developers
General Information
AZ® 300 MIF, AZ® 326 MIF, AZ® 726 MIF and AZ® 2026 MIF Developers are developer formulations with 2.38 % TMAH (tetramethylammoniumhydroxide) in H2O.
The AZ® 726 MIF Developer contains additionally a surfactant for better wetting and easy to settle up of puddle development. Additionally to the wetting agent of the AZ® 726 MIF the AZ® 2026 MIF contains a scum remover for complete and scum-free removal of resist layers on the price of a slightly higher dark erosion ratio.
However, for our negative resists, such as AZ® nLof 2000 series, AZ® 15nXT series, AZ® 125nXT resists this developer shows outstanding performance. Even for a positive resist like AZ® 10XT resist it significantly reduces t-topping if this problem occurs.
AZ® 2033 MIF is 3.00 % TMAH in H2O with surfactants added for fast and homogeneous substrate wetting and further additives for removal of resist residuals (residues in certain lacquer families), but at the cost of a higher dark removal. Compared to the AZ® 2026 MIF, the normality is not 0.26 but 0.33. Thus the development rate is higher with the AZ® 2033 MIF Developer.
Further Information
MSDS:
Safety Data Sheet AZ® 2033 MIF Developer english
Sicherheitsdatenblatt AZ® 2033 MIF Entwickler german
TDS:
Technical Data Sheet AZ® 2033 MIF Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack german
AZ 300 MIF Developer - 5.00 l
1000300
AZ® 300 MIF Developer
Metal Ion-free Developers
General Information
AZ® 300 MIF, AZ® 326 MIF, AZ® 726 MIF and AZ® 2026 MIF Developers are developer formulations with 2.38 % TMAH (tetramethylammoniumhydroxide) in H2O.
The AZ® 726 MIF Developer contains additionally a surfactant for better wetting and easy to settle up of puddle development. Additionally to the wetting agent of the AZ® 726 MIF the AZ® 2026 MIF contains a scum remover for complete and scum-free removal of resist layers on the price of a slightly higher dark erosion ratio.
However, for our negative resists, such as AZ® nLof 2000 series, AZ® 15nXT series, AZ® 125nXT resists this developer shows outstanding performance. Even for a positive resist like AZ® 10XT resist it significantly reduces t-topping if this problem occurs.
AZ® 2033 MIF is 3.00 % TMAH in H2O with surfactants added for fast and homogeneous substrate wetting and further additives for removal of resist residuals (residues in certain lacquer families), but at the cost of a higher dark removal. Compared to the AZ® 2026 MIF, the normality is not 0.26 but 0.33. Thus the development rate is higher with the AZ® 2033 MIF Developer.
Further Information
MSDS:
Safety Data Sheet AZ® 300 MIF Developer english
Sicherheitsdatenblatt AZ® 300 MIF Entwickler german
TDS:
Technical Data Sheet AZ® 300 MIF Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack german
AZ 303 Developer - 5.00 l
1000303
AZ® 303 Developer
Inorganic Developers
General Information
AZ® 303 MIC is based on KOH and NaOH and contains strong surfactants. It is designed for positive and aqueous alkaline compatible negative resists, it can be used for AZ® nLof 20XX series resists as well and is the only one TMAH free developer for this resist. AZ® 303 Developer is typically diluted 1:5 - 1:10 with water.
Further Information
MSDS:
Safety Data Sheet AZ® 303 Developer english
Sicherheitsdatenblatt AZ® 303 Entwickler german
TDS:
Technical Data Sheet AZ® 303 Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack german
AZ 326 MIF Developer - 5.00 l
1000326
AZ® 326 MIF Developer
Metal Ion-free Developers
General Information
AZ® 300 MIF, AZ® 326 MIF, AZ® 726 MIF and AZ® 2026 MIF Developers are developer formulations with 2.38 % TMAH (tetramethylammoniumhydroxide) in H2O.
The AZ® 726 MIF Developer contains additionally a surfactant for better wetting and easy to settle up of puddle development. Additionally to the wetting agent of the AZ® 726 MIF the AZ® 2026 MIF contains a scum remover for complete and scum-free removal of resist layers on the price of a slightly higher dark erosion ratio.
However, for our negative resists, such as AZ® nLof 2000 series, AZ® 15nXT series, AZ® 125nXT resists this developer shows outstanding performance. Even for a positive resist like AZ® 10XT resist it significantly reduces t-topping if this problem occurs.
AZ® 2033 MIF is 3.00 % TMAH in H2O with surfactants added for fast and homogeneous substrate wetting and further additives for removal of resist residuals (residues in certain lacquer families), but at the cost of a higher dark removal. Compared to the AZ® 2026 MIF, the normality is not 0.26 but 0.33. Thus the development rate is higher with the AZ® 2033 MIF Developer.
Further Information
MSDS:
Safety Data Sheet AZ® 326 MIF Developer english
Sicherheitsdatenblatt AZ® 326 MIF Entwickler german
TDS:
Technical Data Sheet AZ® 326 MIF Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack german
AZ 340 Developer - 5.00 l
1000340
AZ® 340 Developer
Inorganic Developers
General Information
AZ® 340 Developer is a high normality sodium based developer concentrate for use in on-site custom dilution applications. This developer concentrate is buffered for extended bath life and stable develop rates in batch processes. Dilute using 1 part AZ® 340 Developer to 4 parts DI water for high contrast processing. Developer normality (and develop rate) may be increased as required by increasing the AZ® 340 Developer to water ratio.
Further Information
MSDS:
Safety Data Sheet AZ® 340 Developer english
Sicherheitsdatenblatt AZ® 340 Developer german
TDS:
Technical Data Sheet AZ® 340 Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack german
AZ 351 B Developer - 5.00 l
1000351
AZ® 351B Developer
Inorganic Developers
General Information
AZ® 351B Developer is based on buffered NaOH and typically used in a 1:3 to 1:4 dilution (1 part of concentrate and 4 parts of DI-water). 1:3 dilution is the high speed setup while 1:4 will be used for a high contrast setup. It can be used especially for our thinner resist types, such as AZ® 1500 Series resists or image reversal resists such as AZ® 5200E resist series.
Further Information
MSDS:
Safety Data Sheet AZ® 351B Developer english
Sicherheitsdatenblatt AZ® 351B Entwickler german
TDS:
Technical Data Sheet AZ® 351B Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack german
AZ 400 K Dev 1:4 - 5.00 l
1004145
AZ® 400K Developer 1:4
Inorganic Developers
General Information
In addition to the concentrate, a pre-diluted AZ® 400K 1:4 version is now also available, other dilution ratios on request.
AZ® 400K MIC Developer is based on buffered KOH and typically used in a 1:3 to 1:4 dilution (1 part of concentrate and 4 parts of DI-water) and can be used especially for our thicker resist types, such as AZ® 4562, AZ® 10XT, and AZ® 40XT.
Further Information
MSDS:
Safety Data Sheet AZ® 400K 1:4 Developer english
Sicherheitsdatenblatt AZ® 400K 1:4 Entwickler german
TDS:
Technical Data Sheet AZ® 400K 1:4 Developer english
Information AZ® 400K 1:4 Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack german
AZ 400 K Developer - 5.00 l
1000400
AZ® 400K Developer
Inorganic Developers
General Information
AZ® 400K MIC is based on buffered KOH and typically used in a 1:3 to 1:4 dilution (1 part of concentrate and 4 parts of DI-water) and can be used especially for our thicker resist types, such as AZ® 4562, AZ® 10XT, and AZ® 40XT. In addition to the concentrate, a pre-diluted AZ® 400K 1:4 version is now also available, other dilution ratios on request.
Further Information
MSDS:
Safety Data Sheet AZ® 400K Developer english
Sicherheitsdatenblatt AZ® 400K Entwickler german
TDS:
Technical Data Sheet AZ® 400K Developer english
Information AZ® 400K Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack german
AZ 726 MIF Developer - 5.00 l
1000726
AZ® 726 MIF Developer
Metal Ion-free Developers
General Information
AZ® 300 MIF, AZ® 326 MIF, AZ® 726 MIF and AZ® 2026 MIF Developers are developer formulations with 2.38 % TMAH (tetramethylammoniumhydroxide) in H2O.
The AZ® 726 MIF Developer contains additionally a surfactant for better wetting and easy to settle up of puddle development. Additionally to the wetting agent of the AZ® 726 MIF the AZ® 2026 MIF contains a scum remover for complete and scum-free removal of resist layers on the price of a slightly higher dark erosion ratio.
However, for our negative resists, such as AZ® nLof 2000 series, AZ® 15nXT series, AZ® 125nXT resists this developer shows outstanding performance. Even for a positive resist like AZ® 10XT resist it significantly reduces t-topping if this problem occurs.
AZ® 2033 MIF is 3.00 % TMAH in H2O with surfactants added for fast and homogeneous substrate wetting and further additives for removal of resist residuals (residues in certain lacquer families), but at the cost of a higher dark removal. Compared to the AZ® 2026 MIF, the normality is not 0.26 but 0.33. Thus the development rate is higher with the AZ® 2033 MIF Developer.
Further Information
MSDS:
Safety Data Sheet AZ® 726MIF Developer english
Sicherheitsdatenblatt AZ® 726MIF Entwickler german
TDS:
Technical Data Sheet AZ® 726MIF Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack german
AZ Developer - 5.00 l
1000001
AZ® Developer
Inorganic Developers
General Information
AZ® Developer is optimized for minimum Al attack. It is an odourless, aqueous, inorganic, alkaline solution, which is compatible with batch and in-line developing processes. It is typically applied 1:1 diluted in DI-H2O for high contrast, or undiluted for a high development rate. The dark erosion of AZ® Developer is slightly higher as compared to other developers. AZ® Developer can be used in combination with most families of AZ® Photoresists (i.e. AZ® 1500, AZ® ECI3000 and AZ® 4500 or AZ® PL177). AZ® Developer displays the lowest aluminium etch rate (it is more or less zero!) of all AZ® Developer - types and is ideal for metal levels.
Further Information
MSDS:
Safety Data Sheet AZ® Developer english
Sicherheitsdatenblatt AZ® Developer german
TDS:
Technical Data Sheet AZ® Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack german
AZ Developer 1:1 - 5.00 l
1000115
AZ® Developer 1:1
Inorganic Developers
General Information
AZ® Developer 1:1 is a ready-to-use product and is a 1:1 dilution of AZ Developer. The developer is optimized for minimum Al attack. It is an odourless, aqueous, inorganic, alkaline solution, which is compatible with batch and in-line developing processes. AZ® Developer 1:1 is for high contrast. The dark erosion of AZ® Developer 1:1 is slightly higher as compared to other developers. AZ® Developer 1:1 can be used in combination with most families of AZ® Photoresists (i.e. AZ® 1500, AZ® ECI3000 and AZ® 4500 or AZ® PL177). AZ® Developer 1:1 displays the lowest aluminium etch rate (it is more or less zero!) of all AZ® Developer 1:1 types and is ideal for metal levels.
Further Information
MSDS:
Safety Data Sheet AZ® Developer 1:1 english
Sicherheitsdatenblatt AZ® Developer 1:1 german
TDS:
Technical Data Sheet AZ® Developer 1:1 english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack german