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MCZ-Si wafer 8 inch 725 um (100) SSP B-doped

Prime CZ-Si wafer 725 µm 100

Product information "MCZ-Si wafer 8 inch 725 um (100) SSP B-doped"

Prime MCZ-Si wafer 8 inch, thickness = 725 ± 25 µm, (100), 1-side polished, p-type (Boron), 1000 - 10000 Ohm cm, SEMI Notch

Diameter (round): 8 inch
Material: CZ-Si
Orientation: 100
Quality: Prime
Resistivity: 1000 - 10000 Ohm cm
Surface: 1-side polished
Thickness: 701 - 1000 µm