MC-Dip-Coating Resist - 0.50 l
MicroChemicals GmbH
MC Dip Coating Resist is a positive tone optimized for Dip Coating application.
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Product number:
1dip005
Manufacturer:
MicroChemicals GmbH
Product information "MC-Dip-Coating Resist - 0.50 l"
MC Dip Coating
Resist for Dip Coating
General Information
The MC Dip Coating Resist is a positive tone, ready-to-use (ready-diluted), low-cost resist, optimized for dip coating application with improved large-scale resist film thickness homogeneity.
Product Properties
MC Dip Coating Resist is a low-cost, ready-to-use (ready-diluted), positive tone resist optimized for dip coating with improved large-scale resist film thickness homogeneity. Its dye allows a fast and easy visual inspection on the coating performance. The attainable resist film thickness range is approx. 2 - 10 µm at a pull velocity of 3 - 15 mm/s. MC Dip Coating Resist contains two solvents: The low-boiling MEK causes a fast pre-drying of the resist film thus preventing resist flowing towards the bottom of the substrate (panels) to be coated. The high-boiling (= slowly evaporating) PGMEA yields a very smooth resist film surface.
Dip Coating
A pull velocity of 5 - 8 mm/s is recommended for a high coating homogeneity. Between the dip coating steps, it is recommended to cover the tank in order to prevent the evaporation of MEK and the incorporation of particles into the liquid resist. After coating, few minutes delay at room temperature will allow the resist film to smoothen.
Developers
We recommend the developers AZ® Developer, AZ® 400K and AZ® 351B also possible are simple NaOH, KOH and TMAH solutions.
Resist Removal
Alkaline strippers such as AZ® 100 Remover, or an approx. 3 % aqueous KOH- or NaOH-solution will work. Many organic solvents are also suited for photoresist removal.
Further Information
MSDS:
Safety Data Sheet MC Dip Coating Resist english
Sicherheitsdatenblatt MC Dip Coating Resist german
TDS:
Technical Data Sheet MC Dip Coating Resist english
Application Notes:
Further Information about Photoresist Processing
| Chemically amplified: | no |
|---|---|
| Film thickness: | 2 – 10 µm |
| Film thickness range: | medium (1.6 - 5.0µm), thick (> 5.1µm) |
| High thermal stability: | no |
| Mode: | positive |
| Optimized for: | dip coating, wet etching |
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1A004999
Bottle size:
3.785 l
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Spray Coating
General Information
AZ®4999 is a spray coating dedicated highly transparent photoresist tailored to excel on special spray coating equipment (e.g. SUSS Delta AltaSpray) where it provides defect free and conformal coatings on devices with severe topography. Thick (several to several tens of microns) and uniform resist coatings are obtained on topography such as V-grooves and trenches with optimum coverage of sharp edges. There is no accumulation of resist in trenches. The use of AZ®4999 photoresist enables high reproducibility in volume production applications.
Product Properties
Viscosity (at 25°C): 0.52 cSt
Solids content: 4 %
Absorptivity at 398 nm: 0.1 l/(g*cm)
Spectral sensitivity: 310 nm – 440 nm
Developers
If metal ion containing developers can be used, the KOH-based AZ® 400K in a 1:4 dilution (for higher resist film thicknesses 1:3.5 - 1:3 diluted possible) is a suited developer.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 2026 MIF developer (undiluted).
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents cab be used as stripper. If the resist film is crosslinked (e. g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the products AZ® EBR Solvent or PGMEA.
Further Information
MSDS:
Safety Data Sheet AZ® 4999 Photoresist english
Sicherheitsdatenblatt AZ® 4999 Fotolack german
TDS:
Technical Data Sheet AZ® 4999 Photoresist english
Application Notes:
Further Information about Photoresist Processing
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1A001505
Bottle size:
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General Information
The AZ® 1500 photoresist series yields an improved adhesion for all common wet etching processes. The lateral resolution depends on the resist film thickness and reaches down to sub-µm. The high resolution and adhesion of the AZ® 1505 make this resist a commonly used resist mask for Cr etching in photo mask production.
At 4000 rpm, a coating thickness of approx. 500 nm can be attained. A coating thickness of approx. 400 - 800 nm can also be achieved by varying the spin speed.
Product Properties
Improved resist adhesion to all common substrate materials
Broad process parameter window for stable and reproducible litho-processes
High development rate
Compatible with all common developers (NaOH-, KOH- or TMAH-based)
Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range approx. 0.4 – 0.8 µm
Developers
If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based **AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water.
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the AZ® EBR Solvent.
Further Information
MSDS:
Safety Data Sheet AZ® 1505 Photoresist english
Sicherheitsdatenblatt AZ® 1505 Fotolack german
TDS:
Technical Data Sheet AZ® 1505 Photoresist english
Application Notes:
Further Information about Photoresist Processing
AZ 1512 HS Photoresist - 3.785 l
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Bottle size:
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AZ® 1512 HS
Positive Thin Resists for Wet Etching
General Information
The AZ® 1500 photoresist series yields an improved adhesion for all common wet etching processes. The lateral resolution depends on the resist film thickness and reaches down to sub-µm.
The very high photo active compound concentration of the AZ® 1512 HS maximises the resist contrast (very high development rate, minimized dark erosion).
At 4000 rpm, a coating thickness of approx. 1.2 µm can be attained. A coating thickness of approx. 1.0 – 1.8 µm can also be achieved by varying the spin speed.
Product Properties
Improved resist adhesion to all common substrate materials
Broad process parameter window for stable and reproducible litho-processes
High development rate
Compatible with all common developers (NaOH-, KOH- or TMAH-based)
Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range approx. 1.0 – 1.8 µm
Developers
If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF** developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water.
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the AZ® EBR Solvent.
Further Information
MSDS:
Safety Data Sheet AZ® 1512 HS Photoresist english
Sicherheitsdatenblatt AZ® 1512 HS Fotolack german
TDS:
Technical Data Sheet AZ® 1512 HS Photoresist english
Application Notes:
Further Information about Photoresist Processing
AZ 1514 H Photoresist - 3.785 l
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Bottle size:
3.785 l
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Positive Thin Resists for Wet Etching
General Information
The AZ® 1500 photoresist series yields an improved adhesion for all common wet etching processes. The lateral resolution depends on the resist film thickness and reaches down to sub-µm.
A special resin further improves the resist adhesion on most common (metallic) substrates. Resist film thickness at 4000 rpm approx. 1.4 µm, via variations of the spin speed approx. 1.1 - 2 µm attainable.
Product Properties
Improved resist adhesion to all common substrate materials
Broad process parameter window for stable and reproducible litho-processes
High development rate
Compatible with all common developers (NaOH-, KOH- or TMAH-based)
Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents, or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
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Developers
If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based **AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water.
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the AZ® EBR Solvent.
Further Information
MSDS:
Safety Data Sheet AZ® 1514 H Photoresist english
Sicherheitsdatenblatt AZ® 1514 H Fotolack german
TDS:
Technical Data Sheet AZ® 1514 H Photoresist english
Application Notes:
Further Information about Photoresist Processing
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Bottle size:
3.785 l
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High Resolution with Broad Process Window
General Information
The AZ® ECI 3000 series is a modern, state-of-the-art positive resist series. The resolution potential as well as the process stability allows feature sizes close to the theoretical minimum attainable with broadband (non-DUV) resists.
AZ® ECI 3000 resists are a suitable series for both wet and dry chemical processes due to their good adhesion and thermal stability. The resist are available in three viscosity grades AZ® ECI 3007 (0.7 µm resist film thickness at 4000 rpm), AZ® ECI 3012 (1.2 µm) and AZ® ECI 3027 (2.7 µm).
The very high resolution potential allows lateral structural sizes down to 300 nm and opens a comparatively large and stable process window at lower resolution requirements. These resists can be developed with NaOH, KOH or TMAH based developers.
Product Properties
Very high resolution
Optimized resist adhesion to all common substrate materials
Steep resist-sidewalls and high aspect ratio for dry etching or ion implantation
Broad process parameter window for stable and reproducible litho-processes
Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range approx. 0.5 - 1 µm
Developers
If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water.
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal.
Further Information
MSDS:
Safety Data Sheet AZ® ECI 3007 Photoresist english
Sicherheitsdatenblatt AZ® ECI 3007 Fotolack german
TDS:
Technical Data Sheet AZ® ECI 3000 Series english
Application Notes:
Further Information about Photoresist Processing
AZ ECI 3012 Photoresist - 3.785 l
1A003012
Bottle size:
3.785 l
AZ® ECI 3012
High Resolution with Broad Process Window
General Information
The AZ® ECI 3000 series is a modern, state-of-the-art positive resist series. The resolution potential as well as the process stability allows feature sizes close to the theoretical minimum attainable with broadband (non-DUV) resists.
AZ® ECI 3000 resists are a suitable series for both wet and dry chemical processes due to their good adhesion and thermal stability. The resist are available in three viscosity grades AZ® ECI 3007 (0.7 µm resist film thickness at 4000 rpm), AZ® ECI 3012 (1.2 µm) and AZ® ECI 3027 (2.7 µm).
The very high resolution potential allows lateral structural sizes down to 300 nm and opens a comparatively large and stable process window at lower resolution requirements. These resists can be developed with NaOH, KOH or TMAH based developers.
*450 nm resist lines with the AZ® ECI 3012 at approx. 1.2 µm film thickness.
Product Properties
Very high resolution
Optimized resist adhesion to all common substrate materials
Steep resist sidewalls and high aspect ratio for dry etching or ion implantation
-Broad process parameter window for stable and reproducible litho-processes
Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range approx. 0.9 – 1.5 µm
Developers
If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water.
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal.
Further Information
MSDS:
Safety Data Sheet AZ® ECI 3012 Photoresist english
Sicherheitsdatenblatt AZ® ECI 3012 Fotolack german
TDS:
Technical Data Sheet AZ® ECI 3012 Photoresist english
Technical Data Sheet AZ® ECI 3000 Series english
Application Notes:
Further Information about Photoresist Processing
AZ ECI 3027 Photoresist - 3.785 l
1A003027
Bottle size:
3.785 l
AZ® ECI 3027
High Resolution with Broad Process Window
General Information
The AZ® ECI 3000 series is a modern, state-of-the-art positive resist series. The resolution potential as well as the process stability allows feature sizes close to the theoretical minimum attainable with broadband (non-DUV) resists.
AZ® ECI 3000 resists are a suitable series for both wet and dry chemical processes due to their good adhesion and thermal stability. The resist are available in three viscosity grades AZ® ECI 3007 (0.7 µm resist film thickness at 4000 rpm), AZ® ECI 3012 (1.2 µm) and AZ® ECI 3027 (2.7 µm).
The very high resolution potential allows lateral structural sizes down to 300 nm and opens a comparatively large and stable process window at lower resolution requirements. These resists can be developed with NaOH, KOH or TMAH based developers.
900 nm resist lines with the AZ® ECI 3027 at approx. 2.7 µm resist film thickness.
Product Properties
Very high resolution
Optimized resist adhesion to all common substrate materials
Steep resist-sidewalls and high aspect ratio for dry etching or ion implantation
Broad process parameter window for stable and reproducible litho-processes
Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range approx. 2 – 3.5 µm
Developers
If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water.
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal.
Further Information
MSDS:
Safety Data Sheet AZ® ECI 3027 Photoresist english
Sicherheitsdatenblatt AZ® ECI 3027 Fotolack german
TDS:
Technical Data Sheet AZ® ECI 3000 Series english
Application Notes:
Further Information about Photoresist Processing
AZ MIR 701 Photoresist (11 CPS) - 3.785 l
1007011
AZ® MIR 701 (11CPS)
High Resolution and Temperature Stability
General Information
AZ® 701 MIR Series for 0.7 – 3.0 µm Resist Film Thickness (g-, h- and I-line)
As thermally stable (softening point > 130°C), high-resolution positive resist, the AZ® 701 MIR (11CPS) is optimised especially for dry chemical etching of fine to very fine structures. This resist can be easily further diluted in order to attain even better resolutions, for example in applications of laser-interference lithography. We sell this resist in two different viscosities of 11CPS, 14CPS and 29CPS. It can be used with common NaOH, KOH or TMAH based developers.
300 nm resist lines attained with the AZ® 701 MIR
1.2µm structure after 130°C hardbake
Product Properties
Very high resolution, for 0.5 µm and 0.35 µm technology nodes
High thermal stability
Excellent process latitude for both line/space and contact whole applications
Steep resist-sidewalls and high aspect ratio for dry etching or ion implantation
Broad process parameter window for stable and reproducible litho-processes
Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range AZ® MIR 701 (11CPS): approx. 0.6 – 1.0 µm
Developers
If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for resist film thicknesses and resolutions < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer.
The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution and very thin resist layers - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water.
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 or AZ® Remover 920.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal.
Further Information
MSDS:
Safety Data Sheet AZ® MIR 701 (11CPS) Photoresist english
Sicherheitsdatenblatt AZ® MIR 701 (11CPS) Fotolack german
TDS:
Technical Data Sheet AZ® MIR 701 Series english
Application Notes:
Further Information about Photoresist Processing
AZ MIR 701 Photoresist (14 CPS) - 3.785 l
10070114
Bottle size:
3.785 l
AZ® MIR 701 (14CPS)
High Resolution and Temperature Stability
General Information
AZ® 701 MIR Series for 0.7 – 3.0 µm Resist Film Thickness (g-, h- and I-line)
As thermally stable (softening point > 130°C), high-resolution positive resist, the AZ® 701 MIR (14CPS) is optimised especially for dry chemical etching of fine to very fine structures. This resist can be easily further diluted in order to attain even better resolutions, for example in applications of laser-interference lithography. We sell this resist in three different viscosities of 11CPS, 14CPS and 29CPS. It can be used with common NaOH, KOH or TMAH based developers.
300 nm resist lines attained with the AZ® 701 MIR
1.2µm structure after 130°C hardbake
Product Properties
Very high resolution, for 0.5 µm and 0.35 µm technology nodes
High thermal stability
Excellent process latitude for both line/space and contact whole applications
Steep resist-sidewalls and high aspect ratio for dry etching or ion implantation
Broad process parameter window for stable and reproducible litho-processes
Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range AZ® MIR 701 (14CPS): approx. 0.6 – 1.1 µm
Developers
If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for resist film thicknesses and resolutions < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer.
The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution and very thin resist layers - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water.
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 or AZ® Remover 920.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal.
Further Information
MSDS:
Safety Data Sheet AZ® MIR 701 (14CPS) Photoresist english
Sicherheitsdatenblatt AZ® MIR 701 (14CPS) Fotolack german
TDS:
Technical Data Sheet AZ® MIR 701 Series english
Application Notes:
Further Information about Photoresist Processing
AZ MIR 701 Photoresist (29 CPS) - 3.785 l
10070129
Bottle size:
3.785 l
AZ® MIR 701 (29CPS)
High Resolution and Temperature Stability
General Information
AZ® 701 MIR Series for 0.7 – 3.0 µm Resist Film Thickness (g-, h- and I-line)
As thermally stable (softening point > 130°C), high-resolution positive resist, the AZ® 701 MIR (29CPS) is optimised especially for dry chemical etching of fine to very fine structures. This resist can be easily further diluted in order to attain even better resolutions, for example in applications of laser-interference lithography. We sell this resist in two different viscosities of 11CPS, 14CPS and 29CPS. It can be used with common NaOH, KOH or TMAH based developers.
300 nm resist lines attained with the AZ® 701 MIR
1.2µm structure after 130°C hardbake
Product Properties
Very high resolution, for 0.5 µm and 0.35 µm technology nodes
High thermal stability
Excellent process latitude for both line/space and contact whole applications
Steep resist-sidewalls and high aspect ratio for dry etching or ion implantation
Broad process parameter window for stable and reproducible litho-processes
Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range AZ® MIR 701 (29CPS): approx. 1.2 – 2.5 µm
Developers
If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for resist film thicknesses and resolutions < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer.
The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution and very thin resist layers - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water.
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 or AZ® Remover 920.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal.
Further Information
MSDS:
Safety Data Sheet AZ® MIR 701 (29CPS) Photoresist english
Sicherheitsdatenblatt AZ® MIR 701 (29CPS) Fotolack german
TDS:
Technical Data Sheet AZ® MIR 701 (29CPS) english
Technical Data Sheet AZ® MIR 701 Series english
Application Notes:
Further Information about Photoresist Processing
AZ TFP-650F5 (15CP) Photoresist - 3.785 l
34000511
AZ® TFP 650
Flat Panel Display Photoresist
General Information
The AZ® TFP 650 F5 resist is suitable for spin coat and extrusion coat applications excellent adhesion requirements and/or harsh etching conditions. It is designed to meet the requirements of the flat panel display industry. They are specifically optimized for a variety of applications including spin coat, extrusion coat and roller coat. These production-proven photoresists can be used with a variety of developers and removers, and they are formulated to be compatible with the underlying layers.
Product Properties
Ultra high photospeed
Low dark film loss
Optimized resist adhesion
Easy removal after hardbake
High resistance to harsh etchants
Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range approx. 1 – 2 µm
Developers
We recommend the TMAH-based AZ® 726 MIF or AZ® 326 MIF (this one contains surfactants).
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents cab be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free such as AZ® 920 Remover or TechniStrip P1316 as remover.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the products AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal.
Further Information
MSDS:
Safety Data Sheet AZ® TFP 650 Photoresist english
Sicherheitsdatenblatt AZ® TFP 650 Fotolack german
TDS:
Technical Data Sheet AZ® TFP 650 english
Information AZ® TFP 650 english
Application Notes:
Further Information about Photoresist Processing
AZ 1518 Photoresist - 3.785 l
1A001518
Bottle size:
3.785 l
AZ® 1518
Positive Thin Resists for Wet Etching
General Information
The AZ® 1500 photoresist series yields an improved adhesion for all common wet etching processes. The lateral resolution depends on the resist film thickness and reaches down to sub-µm.
The elevated resist film thickness of the AZ® 1518 improve the stability of the resist mask for wet etching processes.
At 4000 rpm, a coating thickness of approx. 1.8 µm can be attained. A coating thickness of approx. 1.5 – 3.0 µm can also be achieved by varying the spin speed.
Product Properties
Improved resist adhesion to all common substrate materials
Broad process parameter window for stable and reproducible litho-processes
High development rate
Compatible with all common developers (NaOH-, KOH- or TMAH-based)
Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline)
g-, h- and i-line sensitive (approx. 320 - 440 nm)
Resist film thickness range approx. 1.5 µm – 3.0 µm
Developers
If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required.
If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water.
Removers
For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the AZ® EBR Solvent.
Further Information
MSDS:
Safety Data Sheet AZ® 1518 Photoresist english
Sicherheitsdatenblatt AZ® 1518 Fotolack german
TDS:
Technical Data Sheet AZ® 1518 Photoresist english
Application Notes:
Further Information about Photoresist Processing
Developer
AZ Developer - 5.00 l
1000001
AZ® Developer
Inorganic Developers
General Information
AZ® Developer is optimized for minimum Al attack. It is an odourless, aqueous, inorganic, alkaline solution, which is compatible with batch and in-line developing processes. It is typically applied 1:1 diluted in DI-H2O for high contrast, or undiluted for a high development rate. The dark erosion of AZ® Developer is slightly higher as compared to other developers. AZ® Developer can be used in combination with most families of AZ® Photoresists (i.e. AZ® 1500, AZ® ECI3000 and AZ® 4500 or AZ® PL177). AZ® Developer displays the lowest aluminium etch rate (it is more or less zero!) of all AZ® Developer - types and is ideal for metal levels.
Further Information
MSDS:
Safety Data Sheet AZ® Developer english
Sicherheitsdatenblatt AZ® Developer german
TDS:
Technical Data Sheet AZ® Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack german
AZ 400 K Developer - 5.00 l
1000400
AZ® 400K Developer
Inorganic Developers
General Information
AZ® 400K MIC is based on buffered KOH and typically used in a 1:3 to 1:4 dilution (1 part of concentrate and 4 parts of DI-water) and can be used especially for our thicker resist types, such as AZ® 4562, AZ® 10XT, and AZ® 40XT. In addition to the concentrate, a pre-diluted AZ® 400K 1:4 version is now also available, other dilution ratios on request.
Further Information
MSDS:
Safety Data Sheet AZ® 400K Developer english
Sicherheitsdatenblatt AZ® 400K Entwickler german
TDS:
Technical Data Sheet AZ® 400K Developer english
Information AZ® 400K Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack german
AZ 351 B Developer - 5.00 l
1000351
AZ® 351B Developer
Inorganic Developers
General Information
AZ® 351B Developer is based on buffered NaOH and typically used in a 1:3 to 1:4 dilution (1 part of concentrate and 4 parts of DI-water). 1:3 dilution is the high speed setup while 1:4 will be used for a high contrast setup. It can be used especially for our thinner resist types, such as AZ® 1500 Series resists or image reversal resists such as AZ® 5200E resist series.
Further Information
MSDS:
Safety Data Sheet AZ® 351B Developer english
Sicherheitsdatenblatt AZ® 351B Entwickler german
TDS:
Technical Data Sheet AZ® 351B Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack german
KOH 44% - 2.50 l - VLSI
TKOV1025
KOH
Potassium Hydroxide
General Information
KOH is mainly used for anisotropic silicon etching.
We supply KOH (44 %) in VLSI-quality, which is the usual purity grades applied in semiconductor processing and micro-electronics.
Further Information
MSDS:
Safety Data Sheet KOH Solution 44% (VLSI) english
Sicherheitsdatenblatt KOH Solution 44% (VLSI) german
Specs:
Specs KOH Solution 44% (VLSI)
Application Notes:
Wet Etching english
Nasschemisches Ätzen german
Further Information about Processing
TMAH 25% - 2.50 l - VLSI - EVE/EUD!
TTMV1025
TMAH
Tetramethylammonium hydroxide
General Information
TMAH is mainly used for anisotropic silicon etching when metal ion free processing is required.
TMAH (25%) is available in VLSI-quality, which is the usual purity grades applied in semiconductor processing and micro-electronics.
Further Information
MSDS:
Safety Data Sheet TMAH 25 % (VLSI) english
Sicherheitsdatenblatt TMAH 25 % (VLSI) german
Specs:
Specs TMAH 25 % (VLSI)
Application Notes:
Wet Etching english
Nasschemisches Ätzen german
Remover
AZ 100 Remover - 5.00 l
1000100
AZ® 100 Remover
Universal Photoresist Stripper
General Information
AZ®100 Remover is based on solvent and amine (alkaline). AZ®100 Remover is used for photoresist stripping with low attack to aluminium. Low hazard is achieved by the use of ethanol amine.
Low evaporation rate allows the use at elevated temperatures (up to 80°C), high efficiency (>3000 wafer per litre) helps saving costs. Where attack to aluminium is of no concern, it may even be diluted with water.
AZ®100 Remover is not compatible with AZ® nLof 2070 (AZ® nLof 2000 series) resists and other heavily cross linked resists.
Product Properties
Density (at 25°C): 0.955 kg/l
Color (Alpha): max. 20
Flashpoint (AP): 72°C
Normality (potentiometric): 3.1 mol/l
Boiling range: 159-194°C
Further Information
MSDS:
Safety Data Sheet AZ® 100 Remover english
Sicherheitsdatenblatt AZ® 100 Remover german
TDS:
Technical Data Sheet AZ® 100 Remover english
Application Notes:
Photoresist removal english
Fotolack entfernen german