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FZ Si + wet SiO2 wafer 4 inch 525 um (100) SSP

Prime Si + SiO2 (wet) (300 nm) wafer 525 µm 100

Product information "FZ Si + wet SiO2 wafer 4 inch 525 um (100) SSP"

Prime FZ Si + wet SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, TTV < 10 µm, intrinsic (undoped) 1000 - 100000 Ohm cm, 300 nm thermal SiO2 dry/wet/dry

Diameter (round): 4 inch
Material: Si + SiO2 (wet) (300 nm)
Orientation: 100
Quality: Prime
Resistivity: > 10000 Ohm cm
SiO2 thickness: 201 - 300 nm
Surface: 1-side polished
Thickness: 501 - 700 µm