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FZ-Si wafer 4 inch 525 um (111) DSP P-doped

Prime FZ-Si wafer 525 µm 111

Product information "FZ-Si wafer 4 inch 525 um (111) DSP P-doped"

Prime FZ-Si wafer 4 inch, thickness = 525 ± 15 µm, (111), 2-side polished, n-type (Phosphor) TTV < 5 µm, 2000 - 1000000 Ohm cm, Flats: 2, [InvP]