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FZ-Si wafer 4 inch 290 um (100) DSP B-doped

Prime FZ-Si wafer 290 µm 100

Product information "FZ-Si wafer 4 inch 290 um (100) DSP B-doped"

Prime FZ-Si wafer 4 inch, thickness = 290 ± 10 µm, (100), 2-side polished, p-type (Boron) TTV < 10 µm, 2000 - 8000 Ohm cm, 2 flats