Skip to main content

FZ-Si wafer 4 inch 280 um (100) DSP B-doped

Prime FZ-Si wafer 280 µm 100

Product information "FZ-Si wafer 4 inch 280 um (100) DSP B-doped"

Prime FZ-Si wafer 4 inch, thickness = 280 ± 10 µm, (100), 2-side polished, p-type (Boron) TTV < 10 µm, 2000 - 8000 Ohm cm, 1 SEMI flat

Diameter (round): 4 inch
Material: FZ-Si
Orientation: 100
Quality: Prime
Resistivity: 1000 - 10000 Ohm cm
Surface: 2-side polished
Thickness: 201 - 300 µm