FZ Si + dry SiO2 wafer 4 inch 525 um (100) DSP
Prime Si + SiO2 (dry) (100 nm) wafer 525 µm 100
| Quantity | Unit price |
|---|---|
| To 4 |
€84.00*
|
| To 9 |
€76.00*
|
| To 24 |
€70.00*
|
| To 49 |
€64.00*
|
| To 99 |
€60.00*
|
| From 100 |
€56.00*
|
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Product number:
WTA40525250X1718S101
Product information "FZ Si + dry SiO2 wafer 4 inch 525 um (100) DSP"
Prime FZ Si + dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 2-side polished, TTV < 10 µm, 10000 - 100000 Ohm cm, 100 nm SiO2
| Diameter (round): | 4 inch |
|---|---|
| Material: | Si + SiO2 (dry) (100 nm) |
| Orientation: | 100 |
| Quality: | Prime |
| Resistivity: | > 10000 Ohm cm |
| SiO2 thickness: | 100 - 200 nm |
| Surface: | 2-side polished |
| Thickness: | 501 - 700 µm |