Cu etch 200 UBM - 5.00 l
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Cu etch 200 UBM
Copper Etchant
General Information
Cu etch 200 UBM is a slightly alkaline etchant for Cu and is used for the wet-chemical removal of Cu seed layers with selectivity to metals like Ni, Au, Cr, Sn, Ti, Al. Common areas of use are for semiconductor fabrication or microsystem technology especially for the removal of seed layers after the plating of under-bump-metallization (UBM).
Product Properties
- Selectivity to many materials, e.g. common metals used in electroplating industry
- Very small dimension lost
- Available in different purity grades
- Compatible to resist masking
- Usage at room temperature
Selectivity
Cu etch 200 UBM is compatible/etches selective to following materials:
- Resists: common Novolak as masking resist (e.g. AZ® Photoresist)
- Metals: no attack on Ni, Au, Cr, Sn, Ti, Al, Pt
- Metals: attack on Cu, Ag
- Semiconductor materials: Si, SiO2, Si3N4
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Etching Rate
Under normal condition, the etching rate is around 200 to 250nm/min (at RT). The etching solution stable over time and can be used multiple times depending on the requirements of application. It is recommended to dispose the solution at the latest, when the etching rate has changed by 20%.
Further Information
MSDS:
Safety Data Sheet Cu etch 200 english
Sicherheitsdatenblatt Cu etch 200 german
TDS:
Technical Data Sheet Cu etch 200 english
Technical Data Sheet Cu etch 200 german
Application Notes:
Wet Etching english
Nasschemisches Ätzen german
Wet Etching of Metals english
Nasschemisches Ätzen von Metallen german
| Resist compatible: | yes |
|---|---|
| Selectivity (attacked): | Ag, Cu |
| Selectivity (no attack on): | Al, Au, Cr, Ni, Pt, Sn, Ti |
| Semiconductor materials: | Si, Si3N4, SiO2 |
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