Cu etch 200 UBM - 5.00 l
NB Technologies GmbH
Cu etch 200 UBM is an alkaline etchant for Cu and is used for the wet-chemical removal of Cu layers.
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Product number:
nbtcue200ubm5
Manufacturer:
NB Technologies GmbH
Product information "Cu etch 200 UBM - 5.00 l"
Cu etch 200 UBM
Copper Etchant
General Information
Cu etch 200 UBM is a slightly alkaline etchant for Cu and is used for the wet-chemical removal of Cu seed layers with selectivity to metals like Ni, Au, Cr, Sn, Ti, Al. Common areas of use are for semiconductor fabrication or microsystem technology especially for the removal of seed layers after the plating of under-bump-metallization (UBM).
Product Properties
- Selectivity to many materials, e.g. common metals used in electroplating industry
- Very small dimension lost
- Available in different purity grades
- Compatible to resist masking
- Usage at room temperature
Selectivity
Cu etch 200 UBM is compatible/etches selective to following materials:
- Resists: common Novolak as masking resist (e.g. AZ® Photoresist)
- Metals: no attack on Ni, Au, Cr, Sn, Ti, Al, Pt
- Metals: attack on Cu, Ag
- Semiconductor materials: Si, SiO2, Si3N4
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Etching Rate
Under normal condition, the etching rate is around 200 to 250nm/min (at RT). The etching solution stable over time and can be used multiple times depending on the requirements of application. It is recommended to dispose the solution at the latest, when the etching rate has changed by 20%.
Further Information
MSDS:
Safety Data Sheet Cu etch 200 english
Sicherheitsdatenblatt Cu etch 200 german
TDS:
Technical Data Sheet Cu etch 200 english
Technical Data Sheet Cu etch 200 german
Application Notes:
Wet Etching english
Nasschemisches Ätzen german
Wet Etching of Metals english
Nasschemisches Ätzen von Metallen german
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Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Further Information
MSDS:
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Specs:
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Application Notes:
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Bottle size:
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General Information
Au etch 200 is a non-hazardous, cyanide-free, slightly alkaline etchant for Au. The etchant is used for the wet-chemical patterning of Au layers with selectivity to metals like Pt, Ni, Cr, Ti, Al. Common areas of use for semiconductor fabrication or micro system technology.
Product Properties
Low undercut (in the range of the layer thickness), minimum feature size < 1 µm
Selectivity to many materials, e.g. common metals used in electroplating industry
Available in different purity grades
Compatible to resist masking
Not hazardous substance and easy to handle
Selectivity
Au etch 200 is compatible/etches selective to following materials:
Resists: common Novolak as masking resist (e.g. AZ® Photoresist)
Metals: no attack on Pt, Ni, Cr, Ti, Al, Ta
Metals: attacked Au, Cu
Semiconductor materials: Si, SiO2, Si3N4
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Etching Rate
Under normal condition, the etching rate is around 40 nm/min (at 50°C). The mixed etching solution is stable over time and can be used multiple times depending on the requirements of application. It is recommended to dispose the solution at the latest, when the etching rate has changed by 20%.
Further Information
MSDS:
Safety Data Sheet Au etch 200 english
Sicherheitsdatenblatt Au etch 200 german
TDS:
Technical Data Sheet Au etch 200 english
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Application Notes:
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Further Information about Processing
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General Information
AX 100 is an acidic solution for activating and pretreating seed layers and metallic surfaces for electroplating, on which a direct metallization may cause problems regarding the adhesive strength. This applies e.g. for the electroplating of Au on Ni surfaces or direct electroplating on Ti or TiW layers.
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Common fields of application are semiconductor fabrication and microsystem technology.
Product Properties
Low or none etch attack on metallic surfaces
Compatible to many materials, e.g. common metals used in electroplating industry
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Moderate operation temperature of about 40°C
Selectivity
AX 100 is compatible/etches selective to following materials:
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Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Further Information
MSDS:
Safety Data Sheet AX 100 english
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TDS:
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Application Notes:
Further Information about Processing
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We supply BOE 7:1 = buffered hydrofluoric acid (HF : NH4F = 12.5 : 87.5%) in VLSI-quality, which is the usual purity grades applied in semiconductor processing and micro-electronics.
NOTE:
BOE must be stored and transported above +12.5°C. Below this critical temperature of 12.5°C the material forms particles (little crystals). Since these crystals have a higher density, they will accumulate at the bottom of the bottle and will only be completely re-dissolved when the material is stored at temperatures of 30 - 35°C for some days. After this procedure the crystals should be re-dissolved completely and the BOE can be then used without restrictions.
Further Information
MSDS:
Safety Data Sheet BOE 7:1 (VLSI) english
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Specs:
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Application Notes:
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General Information
Cr etch 210 is an alkaline etchant for Cr. The etchant is used for the wet-chemical patterning or removal of thin Cr layers with selectivity to metals like Au, Sn, Pt, Cu, Ni, Ti, Ta. Common areas of use are for semiconductor fabrication or microsystem technology, e.g. for the removal or patterning of a Cr barrier or adhesion layer in a plating seed stack.
Product Properties
Low undercut (in the range of the layer thickness), minimum feature size < 1µm
Selectivity to many materials, e.g. common metals used in electroplating industry
Available in different purity grades
Compatible to resist mask
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Increase of the etching rate by increased temperature up to 40°C
Selectivity
Cr etch 210 is compatible/etches selective to following materials:
Resists: common Novolak as masking resist (e.g. AZ® Photoresist)
Metals: no attack on Au, Sn, Pt, Cu, Ni, Ti, Ta
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Semiconductor materials: Si, SiO2, Si3N4
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Etching Rate
Under normal condition, the etching rate is around 10 to 15nm/min at 40 °C (accordingly lower at room temperature). A sputtered 30nm Cr layer is etched in about 180 seconds. The mixed etching solution is stable over time and can be used multiple times depending on the requirements of application. It is recommended to dispose the solution at the latest, when the etching rate has changed by 20%.
Further Information
MSDS:
Safety Data Sheet Cr etch 210 english
Sicherheitsdatenblatt Cr etch 210 german
TDS:
Technical Data Sheet Cr etch 210 english
Technical Data Sheet Cr etch 210 german
Application Notes:
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General Information
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Product Properties
High etching rate and rate of under etching with Cu as sacrificial layer
Selectivity to many materials, e.g. common metals used in electroplating industry
Available in different purity grades
Compatible to resist masking
Usage at room temperature
Selectivity
Cu etch 100 is compatible/etches selective to following materials:
Resists: common Novolak as masking resist (e.g. AZ® Photoresist)
Metals: no attack on Ni, Au, Cr, Sn, Ti, Pt, Ta
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Semiconductor materials: Si, SiO2, Si3N4
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Etching Rate
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Further Information
MSDS:
Safety Data Sheet Cu etch 100 english
Sicherheitsdatenblatt Cu etch 100 german
TDS:
Technical Data Sheet Cu etch 100 english
Technical Data Sheet Cu etch 100 german
Application Notes:
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General Information
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Product Properties
Selectivity to many materials, e.g. common metals used in electroplating industry
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Selectivity
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Resists: common Novolak as masking resist (e.g. AZ® Photoresist)
Metals: no attack on Ni, Au, Cr, Sn, Ti, Pt, Ta
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Semiconductor materials: Si, SiO2, Si3N4
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Etching Rate
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Further Information
MSDS:
Safety Data Sheet Cu etch 150 english
Sicherheitsdatenblatt Cu etch 150 german
TDS:
Technical Data Sheet Cu etch 150 english
Technical Data Sheet Cu etch 150 german
Application Notes:
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General Information
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Better process controllability/reliability.
Low Toxicity compared to cyanide and HF/HNO3 based solutions
Selectivity
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Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Further Information
MSDS:
Safety Data TechniEtch™ACI2 (VLSI) english
Sicherheitsdatenblatt TechniEtch™ACI2 (VLSI) german
TDS:
Technical Data Sheet TechniEtch™ACI2 (VLSI) english
Specs:
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Application Notes:
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Further Information about Processing
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General Information
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Product Properties
High etch rate at room temperature.
High stability even in presence of metal contamination
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Selectivity
TechniEtch Al80 is compatible/etches selective to following materials:
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Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Further Information
MSDS:
Safety Data TechniEtch Al80 (MOS) english
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TDS:
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Specs:
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Application Notes:
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Further Information about Processing
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General Information
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Product Properties
Better process controllability/reliability
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Selectivity
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Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Further Information
MSDS:
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Sicherheitsdatenblatt TechniEtch™ CN10 (MOS) german
TDS:
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Mixing TechniEtch™ CN10 (MOS) english
Specs:
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General Information
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Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Further Information
MSDS:
Safety Data TechniEtch Cr01 (VLSI) english
Sicherheitsdatenblatt TechniEtch Cr01 (VLSI) german
TDS:
Technical Data Sheet TechniEtch Cr01 (VLSI) english
Specs:
Specs TechniEtch Cr01 (VLSI)
Application Notes:
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General Information
TiW etch 100 is applied as etchant for titanium-for the wet-chemical patterning of TiW layers with selectivity to metals like Au, Pt, Ni, Cr, Sn. Usual applications are found in the semiconductor or microsystem technology field for etching adhesion layers or diffusion barriers.
Product Properties
Low undercut (in the range of the layer thickness), minimum feature size < 1µm
Selectivity to many materials, e.g. common metals used in electroplating industry
Compatible to resist masking
Selectivity
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Resists: common Novolak as masking resist (e.g. AZ® Photoresist)
Metals: no attack on Au, Pt, Ni, Cr, Sn
Metals: attack on TiW, Cu
Cu impact at prolonged exposition
Semiconductor materials: Si, SiO2, Si3N4
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Etching Rate
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Further Information
MSDS:
Safety Data Sheet TiW etch 100 english
Sicherheitsdatenblatt TiW etch 100 german
TDS:
Technical Data Sheet TiW etch 100 english
Technisches Datenblatt TiW etch 100 german
Application Notes:
Wet Etching english
Nasschemisches Ätzen german
Wet Etching of Metals english
Nasschemisches Ätzen von Metallen german
Further Information about Processing
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General Information
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Product Properties
Low undercut (in the range of the layer thickness), minimum feature size < 1µm
Selectivity to many materials, e.g. common metals used in electroplating industry
Compatible to resist masking
Selectivity
TiW etch 200 is compatible/etches selective to following materials:
Resists: common Novolak as masking resist (e.g. AZ® Photoresist)
Metals: no attack on Au, Pt, Ni, Cr
Metals: attacked TiW, Cu
Semiconductor materials: Si, SiO2, Si3N4
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Etching Rate
Under normal condition, the etching rate is around 5nm/min (at room temperature). The mixed etching solution is stable over time and can be used multiple times depending on the requirements of application. It is recommended to dispose the solution at the latest, when the etching rate has changed by 20%.
Further Information
MSDS:
Safety Data Sheet TiW etch 200 EN
Sicherheitsdatenblatt TiW etch 200 DE
TDS:
Technical Data Sheet TiW etch 200 EN
Technisches Datenblatt TiW etch 200 DE
Application Notes:
Wet Etching
Nasschemisches Ätzen
Wet Etching of Metals
Nasschemisches Ätzen von Metallen
Further Information about Processing
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Hydrogene Peroxide
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General Information
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H2O2 (30%) is available in VLSI-quality, which is the usual purity grades applied in semiconductor processing and micro-electronics.
Further Information
MSDS:
Safety Data Sheet Hydrogen Peroxide 30% (VLSI) english
Sicherheitsdatenblatt Hydrogen Peroxide 30% (VLSI) german
Specs:
Specs Hydrogen Peroxide 30% (VLSI)
Application Notes:
Wet Etching english
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Further Information about Processing