Cr etch 210 - 5.00 l - EVE/EUD!
NB Technologies GmbH
Cr etch 210 is an alkaline etchant for chromium.
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Product number:
nbtcre21005
Manufacturer:
NB Technologies GmbH
Product information "Cr etch 210 - 5.00 l - EVE/EUD!"
Cr etch 210
Chromium Etchant
General Information
Cr etch 210 is an alkaline etchant for Cr. The etchant is used for the wet-chemical patterning or removal of thin Cr layers with selectivity to metals like Au, Sn, Pt, Cu, Ni, Ti, Ta. Common areas of use are for semiconductor fabrication or microsystem technology, e.g. for the removal or patterning of a Cr barrier or adhesion layer in a plating seed stack.
Product Properties
- Low undercut (in the range of the layer thickness), minimum feature size < 1µm
- Selectivity to many materials, e.g. common metals used in electroplating industry
- Available in different purity grades
- Compatible to resist mask
- Use at room temperature
- Increase of the etching rate by increased temperature up to 40°C
Selectivity
Cr etch 210 is compatible/etches selective to following materials:
- Resists: common Novolak as masking resist (e.g. AZ® Photoresist)
- Metals: no attack on Au, Sn, Pt, Cu, Ni, Ti, Ta
- Metals: attacked Cr
- Semiconductor materials: Si, SiO2, Si3N4
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Etching Rate
Under normal condition, the etching rate is around 10 to 15nm/min at 40 °C (accordingly lower at room temperature). A sputtered 30nm Cr layer is etched in about 180 seconds. The mixed etching solution is stable over time and can be used multiple times depending on the requirements of application. It is recommended to dispose the solution at the latest, when the etching rate has changed by 20%.
Further Information
MSDS:
Safety Data Sheet Cr etch 210 english
Sicherheitsdatenblatt Cr etch 210 german
TDS:
Technical Data Sheet Cr etch 210 english
Technical Data Sheet Cr etch 210 german
Application Notes:
Wet Etching english
Nasschemisches Ätzen german
Wet Etching of Metals english
Nasschemisches Ätzen von Metallen german
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General Information
Mixed with H2O2, Ammonia is an ingredient of many etching mixtures for metals such as copper, silver or aluminum.
Our Ammonia solution (28 - 30%) is available in VLSI-quality, which is the usual purity grades applied in semiconductor processing and micro-electronics.
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Further Information
MSDS:
Safety Data Sheet Ammonium Hydroxide Solution (VLSI) 28-30% english
Specs:
Specs Ammonium Hydroxide Solution (VLSI) 28-30%
Application Notes:
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Bottle size:
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Au etch 200
Gold Etchant
General Information
Au etch 200 is a non-hazardous, cyanide-free, slightly alkaline etchant for Au. The etchant is used for the wet-chemical patterning of Au layers with selectivity to metals like Pt, Ni, Cr, Ti, Al. Common areas of use for semiconductor fabrication or micro system technology.
Product Properties
Low undercut (in the range of the layer thickness), minimum feature size < 1 µm
Selectivity to many materials, e.g. common metals used in electroplating industry
Available in different purity grades
Compatible to resist masking
Not hazardous substance and easy to handle
Selectivity
Au etch 200 is compatible/etches selective to following materials:
Resists: common Novolak as masking resist (e.g. AZ® Photoresist)
Metals: no attack on Pt, Ni, Cr, Ti, Al, Ta
Metals: attacked Au, Cu
Semiconductor materials: Si, SiO2, Si3N4
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Etching Rate
Under normal condition, the etching rate is around 40 nm/min (at 50°C). The mixed etching solution is stable over time and can be used multiple times depending on the requirements of application. It is recommended to dispose the solution at the latest, when the etching rate has changed by 20%.
Further Information
MSDS:
Safety Data Sheet Au etch 200 english
Sicherheitsdatenblatt Au etch 200 german
TDS:
Technical Data Sheet Au etch 200 english
Technical Data Sheet Au etch 200 german
Application Notes:
Wet Etching english
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Further Information about Processing
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nbtax1005
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AX 100
Activator
General Information
AX 100 is an acidic solution for activating and pretreating seed layers and metallic surfaces for electroplating, on which a direct metallization may cause problems regarding the adhesive strength. This applies e.g. for the electroplating of Au on Ni surfaces or direct electroplating on Ti or TiW layers.
AX 100 activates metallic surfaces before electroplating and allows a better adhesive strength of electroplated layers on metallic surfaces, which tend to oxidation.
Common fields of application are semiconductor fabrication and microsystem technology.
Product Properties
Low or none etch attack on metallic surfaces
Compatible to many materials, e.g. common metals used in electroplating industry
Compatible to resist masking
Not poisonous substance and easy to handle
Moderate operation temperature of about 40°C
Selectivity
AX 100 is compatible/etches selective to following materials:
Resists: common Novolak as masking resist (e.g. AZ® Photoresist)
Metals: no attack on Ni, Ti, TiW, Ta, Cu
Semiconductor materials: Si, SiO2, Si3N4
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Further Information
MSDS:
Safety Data Sheet AX 100 english
Sicherheitsdatenblatt AX 100 german
TDS:
Technical Data Sheet AX 100 english
Application Notes:
Further Information about Processing
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General Information
BOE is mainly used for etching glasses, quartz and SiO2 films.
We supply BOE 7:1 = buffered hydrofluoric acid (HF : NH4F = 12.5 : 87.5%) in VLSI-quality, which is the usual purity grades applied in semiconductor processing and micro-electronics.
NOTE:
BOE must be stored and transported above +12.5°C. Below this critical temperature of 12.5°C the material forms particles (little crystals). Since these crystals have a higher density, they will accumulate at the bottom of the bottle and will only be completely re-dissolved when the material is stored at temperatures of 30 - 35°C for some days. After this procedure the crystals should be re-dissolved completely and the BOE can be then used without restrictions.
Further Information
MSDS:
Safety Data Sheet BOE 7:1 (VLSI) english
Sicherheitsdatenblatt BOE 7:1 (VLSI) german
Specs:
Specs BOE 7:1 (VLSI)
Application Notes:
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Further Information about Processing
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Copper Etchant
General Information
Cu etch 100 is an alkaline etchant for Cu and is used for the wet-chemical removal of Cu layers with selectivity to metals like Ni, Au, Cr, Sn, Ti. Common areas of use are for semiconductor fabrication or microsystem technology.
Product Properties
High etching rate and rate of under etching with Cu as sacrificial layer
Selectivity to many materials, e.g. common metals used in electroplating industry
Available in different purity grades
Compatible to resist masking
Usage at room temperature
Selectivity
Cu etch 100 is compatible/etches selective to following materials:
Resists: common Novolak as masking resist (e.g. AZ® Photoresist)
Metals: no attack on Ni, Au, Cr, Sn, Ti, Pt, Ta
Metals: attacked Cu, TiW, Ag, Zn
Semiconductor materials: Si, SiO2, Si3N4
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Etching Rate
Under normal condition, the etching rate is around 3 to 3.5µm/min (at RT). The mixed etching solution is not stable over time (mixture of two components), but can be used multiple times depending on the requirements of application. It is recommended to dispose the solution at the latest, when the etching rate has changed by 20%.
Further Information
MSDS:
Safety Data Sheet Cu etch 100 english
Sicherheitsdatenblatt Cu etch 100 german
TDS:
Technical Data Sheet Cu etch 100 english
Technical Data Sheet Cu etch 100 german
Application Notes:
Wet Etching english
Nasschemisches Ätzen german
Wet Etching of Metals english
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Further Information about Processing
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General Information
Cu etch 150 is an alkaline etchant for Cu and is used for the wet-chemical removal of Cu layers with selectivity to metals like Ni, Au, Cr, Sn, Ti. Common areas of use are for semiconductor fabrication or microsystem technology.
Product Properties
Selectivity to many materials, e.g. common metals used in electroplating industry
Available in different purity grades
Compatible to resist masking
Usage at room temperature
Selectivity
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Resists: common Novolak as masking resist (e.g. AZ® Photoresist)
Metals: no attack on Ni, Au, Cr, Sn, Ti, Pt, Ta
Metals: attacked Cu, TiW, Ag, Zn
Semiconductor materials: Si, SiO2, Si3N4
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Etching Rate
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Further Information
MSDS:
Safety Data Sheet Cu etch 150 english
Sicherheitsdatenblatt Cu etch 150 german
TDS:
Technical Data Sheet Cu etch 150 english
Technical Data Sheet Cu etch 150 german
Application Notes:
Wet Etching english
Nasschemisches Ätzen german
Wet Etching of Metals english
Nasschemisches Ätzen von Metallen german
Further Information about Processing
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General Information
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Available in different purity grades
Compatible to resist masking
Usage at room temperature
Selectivity
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Resists: common Novolak as masking resist (e.g. AZ® Photoresist)
Metals: no attack on Ni, Au, Cr, Sn, Ti, Al, Pt
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Semiconductor materials: Si, SiO2, Si3N4
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Etching Rate
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Further Information
MSDS:
Safety Data Sheet Cu etch 200 english
Sicherheitsdatenblatt Cu etch 200 german
TDS:
Technical Data Sheet Cu etch 200 english
Technical Data Sheet Cu etch 200 german
Application Notes:
Wet Etching english
Nasschemisches Ätzen german
Wet Etching of Metals english
Nasschemisches Ätzen von Metallen german
Further Information about Processing
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General Information
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High etch rate at room temperature
Low surface tension for enhanced wetting property
High stability even in presence of metal contamination (Cu, Ni…).
Loading & bath life independent of the solution Cu contamination level (up to 1g/l)
Enlarged loading capacity compared to standard I2/KI based solutions.
Better process controllability/reliability.
Low Toxicity compared to cyanide and HF/HNO3 based solutions
Selectivity
TechniEtch™ACI2 is compatible/etches selective to following materials:
Metals: no attack on Ni, Al, Ti, TiN
Metals: attack on Au, Cu, Sn, Pt, W
Semiconductor materials: Si, SiO2, Si3N4
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Further Information
MSDS:
Safety Data TechniEtch™ACI2 (VLSI) english
Sicherheitsdatenblatt TechniEtch™ACI2 (VLSI) german
TDS:
Technical Data Sheet TechniEtch™ACI2 (VLSI) english
Specs:
Specs TechniEtch™ACI2 (VLSI)
Application Notes:
Wet Etching english
Nasschemisches Ätzen german
Wet Etching Metals english
Nasschemisches Ätzen von Metallen german
Further Information about Processing
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General Information
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Product Properties
High etch rate at room temperature.
High stability even in presence of metal contamination
Loading & bath life mainly dependent of process temperature, tool and extraction flow
Selectivity
TechniEtch Al80 is compatible/etches selective to following materials:
Metals: no attack on Au, Pt
Metals: attack on Al
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Further Information
MSDS:
Safety Data TechniEtch Al80 (MOS) english
Sicherheitsdatenblatt TechniEtch Al80 (MOS) german
TDS:
Technical Data Sheet TechniEtch Al80 (MOS) english
Specs:
Specs TechniEtch Al80 (MOS)
Application Notes:
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Further Information about Processing
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General Information
TechniEtch™ CN10 is a copper and nickel etchant, which is a mixture of nitric- and phosphoric acid.
The etching process should be carried out with an addition of 8-16 % Hydrogenperoxide (30 %).
At 25° C the etching rate is approx. 0.3-0.4 µm per minute. Without the Addition of Hydrogenperoxide the etching rate is significantly lower and less homogenous.
TechniEtch CN10 (90 s RT Cu seed removal)
Product Properties
Better process controllability/reliability
High stability even in presence of metal contamination
Selectivity
TechniEtch™ CN10 is compatible/etches selective to following materials:
Metals: no attack on Ti, TiN
Metals: attack on Cu, Ni
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Further Information
MSDS:
Safety Data TechniEtch™ CN10 (MOS) english
Sicherheitsdatenblatt TechniEtch™ CN10 (MOS) german
TDS:
TF Technical Data Sheet TechniEtch™ CN10 (MOS) english
MC Technical Data Sheet TechniEtch™ CN10 (MOS) english
Mixing TechniEtch™ CN10 (MOS) english
Specs:
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Application Notes:
Wet Etching english
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General Information
TechniEtch Cr01 is a ready-to-use etching mixture based on ceric ammonium nitrate and perchloric acid for Cr etching.
TechniEtch Cr01 consists of ceric ammonium nitrate : Perchloric acid : water = 10.9% : 4.25% : 84.85% with an etching rate of about 60 nm/minute at room temperature comes in VLSI quality.
Product Properties
Cr etch rate at room temperature 60-100 nm/min
Al, Ti, W, Ni @ RT from 10nm/min to 200 nm/min
Cu, Ag, V are heavily etched > 200 nm/min
Au, Pd, Pt are compatible
Compatible with positive tone resin
Can be diluted down to adjust Cr etch rate
Selectivity
TechniEtch Cr01 is compatible/etches selective to following materials:
Metals: no attack on Au, Pd, Pt
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Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Further Information
MSDS:
Safety Data TechniEtch Cr01 (VLSI) english
Sicherheitsdatenblatt TechniEtch Cr01 (VLSI) german
TDS:
Technical Data Sheet TechniEtch Cr01 (VLSI) english
Specs:
Specs TechniEtch Cr01 (VLSI)
Application Notes:
Wet Etching english
Nasschemisches Ätzen german
Wet Etching Metals english
Nasschemisches Ätzen von Metallen german
Further Information about Processing
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nbttiw1005
Bottle size:
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Titan-Wolfram Etchant
General Information
TiW etch 100 is applied as etchant for titanium-for the wet-chemical patterning of TiW layers with selectivity to metals like Au, Pt, Ni, Cr, Sn. Usual applications are found in the semiconductor or microsystem technology field for etching adhesion layers or diffusion barriers.
Product Properties
Low undercut (in the range of the layer thickness), minimum feature size < 1µm
Selectivity to many materials, e.g. common metals used in electroplating industry
Compatible to resist masking
Selectivity
TiW etch 100 is compatible/etches selective to following materials:
Resists: common Novolak as masking resist (e.g. AZ® Photoresist)
Metals: no attack on Au, Pt, Ni, Cr, Sn
Metals: attack on TiW, Cu
Cu impact at prolonged exposition
Semiconductor materials: Si, SiO2, Si3N4
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Etching Rate
Under normal condition, the etching rate is around 1nm/sec (at room temperature). The mixed etching solution is stable over time and can be used multiple times depending on the requirements of application. It is recommended to dispose the solution at the latest, when the etching rate has changed by 20%.
Further Information
MSDS:
Safety Data Sheet TiW etch 100 english
Sicherheitsdatenblatt TiW etch 100 german
TDS:
Technical Data Sheet TiW etch 100 english
Technisches Datenblatt TiW etch 100 german
Application Notes:
Wet Etching english
Nasschemisches Ätzen german
Wet Etching of Metals english
Nasschemisches Ätzen von Metallen german
Further Information about Processing
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nbttiw2005
Bottle size:
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Titan-Wolfram Etchant
General Information
TiW etch 200 is applied as etchant for titanium-for the wet-chemical patterning of TiW layers with selectivity to metals like Au, Pt, Ni, Cr. Usual applications are found in the semiconductor or microsystem technology field for etching adhesion layers or diffusion barriers.
Product Properties
Low undercut (in the range of the layer thickness), minimum feature size < 1µm
Selectivity to many materials, e.g. common metals used in electroplating industry
Compatible to resist masking
Selectivity
TiW etch 200 is compatible/etches selective to following materials:
Resists: common Novolak as masking resist (e.g. AZ® Photoresist)
Metals: no attack on Au, Pt, Ni, Cr
Metals: attacked TiW, Cu
Semiconductor materials: Si, SiO2, Si3N4
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Etching Rate
Under normal condition, the etching rate is around 5nm/min (at room temperature). The mixed etching solution is stable over time and can be used multiple times depending on the requirements of application. It is recommended to dispose the solution at the latest, when the etching rate has changed by 20%.
Further Information
MSDS:
Safety Data Sheet TiW etch 200 EN
Sicherheitsdatenblatt TiW etch 200 DE
TDS:
Technical Data Sheet TiW etch 200 EN
Technisches Datenblatt TiW etch 200 DE
Application Notes:
Wet Etching
Nasschemisches Ätzen
Wet Etching of Metals
Nasschemisches Ätzen von Metallen
Further Information about Processing
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Hydrogene Peroxide
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General Information
H2O2 is an ingredient of the Piranha-etch, RCA-1 and RCA-2 etching solutions, as well as etching solutions for various III/V-semiconductors.
H2O2 (30%) is available in VLSI-quality, which is the usual purity grades applied in semiconductor processing and micro-electronics.
Further Information
MSDS:
Safety Data Sheet Hydrogen Peroxide 30% (VLSI) english
Sicherheitsdatenblatt Hydrogen Peroxide 30% (VLSI) german
Specs:
Specs Hydrogen Peroxide 30% (VLSI)
Application Notes:
Wet Etching english
Nasschemisches Ätzen german
Further Information about Processing