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CZ-Si wafer 8 inch 725 um (100) SSP B-doped

Dummy CZ-Si wafer 725 µm 100

Product information "CZ-Si wafer 8 inch 725 um (100) SSP B-doped"

Dummy CZ-Si wafer 8 inch (200 +/- 0.2 mm), thickness = 725 ± 25 µm, (100) +/- 0.5°, 1-side polished, p-type (Boron) TTV < 10 µm, 1 - 100 Ohm cm, V notch, sales units of 25 wafers, not particle specified

Diameter (round): 8 inch
Doping: Bor
Material: CZ-Si
Orientation: 100
Quality: Dummy
Resistivity: 10 - 100 Ohm cm
Surface: 1-side polished
Thickness: 701 - 1000 µm