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CZ-Si wafer 8 inch 725 um (100) SSP B-doped

Test CZ-Si wafer 725 µm 100

Product information "CZ-Si wafer 8 inch 725 um (100) SSP B-doped"

Test CZ-Si wafer 8 inch, thickness = 725 ± 25 µm, (100), 1-side polished, p-type (Boron), TTV < 10 µm, 1 - 100 Ohm cm, Bow/Warp < 40 µm, V notch

Diameter (round): 8 inch
Material: CZ-Si
Orientation: 100
Quality: Test
Resistivity: 10 - 100 Ohm cm
Surface: 1-side polished
Thickness: 701 - 1000 µm