Skip to main content

CZ-Si wafer 8 inch 650 um (100) SSP B-doped

Dummy CZ-Si wafer 650 µm 100

Product information "CZ-Si wafer 8 inch 650 um (100) SSP B-doped"

Dummy CZ-Si wafer 8 inch, thickness = 650 ± 50 µm, (100), 1-side polished, p-type (Boron), 0.001 - 1000 Ohm cm, not particle-specified, units of 25 wafers in carriers

Diameter (round): 8 inch
Material: CZ-Si
Orientation: 100
Quality: Dummy
Resistivity: 1 - 10 Ohm cm
Surface: 1-side polished
Thickness: 501 - 700 µm