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CZ-Si wafer 6 inch 675 um (100) SSP B-doped

Prime CZ-Si wafer 675 µm 100

Product information "CZ-Si wafer 6 inch 675 um (100) SSP B-doped"

Prime CZ-Si wafer 6 inch, thickness = 675 ± 20 µm, (100), 1-side polished, p-type (Boron), TTV < 10 µm, 1 - 10 Ohm cm, Bow/Warp < 40 µm, JEIDA flat 47.5 +/- 2.5 mm on <110>+/- 1 deg