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CZ-Si wafer 6 inch 400 um (100) DSP B-doped

Prime CZ-Si wafer 400 µm 100

Product information "CZ-Si wafer 6 inch 400 um (100) DSP B-doped"

Prime CZ-Si wafer 6 inch, thickness = 400 ± 10 µm, (100), 2-side polished, p-type (Boron), TTV < 7 µm, 10 - 20 Ohm cm, Bow/Warp < 30 µm, 1 Primary Flat SEMI Standard

Diameter (round): 6 inch
Material: CZ-Si
Orientation: 100
Quality: Prime
Resistivity: 10 - 100 Ohm cm
Surface: 2-side polished
Thickness: 301 - 400 µm