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CZ-Si wafer 5 inch 525 um (100) SSP P-doped

Dummy CZ-Si wafer 525 µm 100

Product information "CZ-Si wafer 5 inch 525 um (100) SSP P-doped"

Dummy CZ-Si wafer 5 inch, thickness = 525 ± 50 µm, (100), 1-side polished, n-type (Phosphor), 0.001 - 100 Ohm cm, not particle-specified, units of 25 wafers (carriers)

Diameter (round): 5 inch
Material: CZ-Si
Orientation: 100
Quality: Dummy
Resistivity: 0.1 - 1 Ohm cm
Surface: 1-side polished
Thickness: 501 - 700 µm