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CZ-Si wafer 4 inch 525 um (111) SSP B-doped

Prime CZ-Si wafer 525 µm 111

Product information "CZ-Si wafer 4 inch 525 um (111) SSP B-doped"

Prime CZ-Si wafer 4 inch, thickness = 525 ± 25 µm, (111), 1-side polished, p-type (Boron), TTV < 10 µm, 1 - 10 Ohm cm

Diameter (round): 4 inch
Material: CZ-Si
Orientation: 111
Quality: Prime
Resistivity: 1 - 10 Ohm cm
Surface: 1-side polished
Thickness: 501 - 700 µm