CZ-Si wafer 4 inch 525 um (100) SSP B-doped
Test CZ-Si wafer 525 µm 100
| Quantity | Unit price |
|---|---|
| To 999 |
€8.40*
|
| From 1000 |
€8.40*
|
No longer available - availability check on request
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Product number:
WSM40525250B1324SNN3
Product information "CZ-Si wafer 4 inch 525 um (100) SSP B-doped"
Test CZ-Si wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, Bow < 40 µm, 1 - 20 Ohm cm, SEMI Flat 32.5 mm. Laser-marking class 100 "LAAS 2021 TESTXXXX"
| Diameter (round): | 4 inch |
|---|---|
| Material: | CZ-Si |
| Orientation: | 100 |
| Quality: | Test |
| Resistivity: | 1 - 10 Ohm cm |
| Surface: | 1-side polished |
| Thickness: | 501 - 700 µm |