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CZ-Si wafer 4 inch 525 um (100) SSP B-doped

Test CZ-Si wafer 525 µm 100

Product information "CZ-Si wafer 4 inch 525 um (100) SSP B-doped"

Test CZ-Si wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, Bow < 40 µm, 1 - 20 Ohm cm, SEMI Flat 32.5 mm. Laser-marking class 100 "LAAS 2021 TESTXXXX"