CZ-Si wafer 4 inch 525 um (100) SSP B-doped
Prime CZ-Si wafer 525 µm 100
| Quantity | Unit price |
|---|---|
| To 4 |
€34.00*
|
| To 9 |
€26.00*
|
| To 24 |
€20.00*
|
| To 49 |
€14.60*
|
| To 99 |
€13.60*
|
| To 199 |
€12.80*
|
| To 499 |
€12.20*
|
| From 500 |
€11.80*
|
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Product number:
WSD40525250B1314SNN5
Product information "CZ-Si wafer 4 inch 525 um (100) SSP B-doped"
Prime CZ-Si wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, Bow/Warp < 30 µm Laser-marking: B0001-xxxMSCC (xxx = 000 - 999, MS = vendor code, CC = check code), top of characters towards edge, Font SEMI OCR, height 1.0 +/- 0.025 mm, width 0.5 +/- 0.025 mm, spacing 0.875 +/- 0.025 mm, dot matrix density (W x H) 5x9, distance to edge 1.1 +/- 0.3 mm, laser mark depth < 50 µm, on front side in the middle of the long flat
| Diameter (round): | 4 inch |
|---|---|
| Material: | CZ-Si |
| Orientation: | 100 |
| Quality: | Prime |
| Resistivity: | 1 - 10 Ohm cm |
| Surface: | 1-side polished |
| Thickness: | 501 - 700 µm |