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CZ-Si wafer 4 inch 525 um (100) SSP B-doped

Prime CZ-Si wafer 525 µm 100

Product information "CZ-Si wafer 4 inch 525 um (100) SSP B-doped"

Prime CZ-Si wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 1 flat