CZ-Si wafer 4 inch 525 um (100) SSP B-doped
Prime CZ-Si wafer 525 µm 100
| Quantity | Unit price |
|---|---|
| To 4 |
€34.00*
|
| To 9 |
€23.80*
|
| To 24 |
€18.20*
|
| To 49 |
€13.60*
|
| To 99 |
€12.80*
|
| To 299 |
€12.20*
|
| To 999 |
€12.00*
|
| From 1000 |
€11.00*
|
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Product number:
WSD40525250B1314SNN2
Product information "CZ-Si wafer 4 inch 525 um (100) SSP B-doped"
Prime CZ-Si wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 1 flat
| Diameter (round): | 4 inch |
|---|---|
| Material: | CZ-Si |
| Orientation: | 100 |
| Quality: | Prime |
| Resistivity: | 1 - 10 Ohm cm |
| Surface: | 1-side polished |
| Thickness: | 501 - 700 µm |