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CZ-Si wafer 4 inch 525 um (100) SSP B-doped

Prime CZ-Si wafer 525 µm 100

Product information "CZ-Si wafer 4 inch 525 um (100) SSP B-doped"

Prime CZ-Si wafer 4 inch, thickness = 525 ± 20 µm, (100), 1-side polished, p-type (Boron), TTV < 5 µm, 1 - 20 Ohm cm, Laser-marking on polished side: MC02-XXX (xxx = 000 ... 999)