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CZ-Si wafer 4 inch 500 um (111) DSP P-doped

Dummy CZ-Si wafer 500 µm 111

Product information "CZ-Si wafer 4 inch 500 um (111) DSP P-doped"

Dummy CZ-Si wafer 4 inch, thickness = 500 ± 25 µm, (111), 2-side polished, n-type (Phosphor), 5 - 100 Ohm cm, packed in units of 25 wafers in carriers, NO FLAT, tiny scratches possible, not particle-specified

Diameter (round): 4 inch
Material: CZ-Si
Orientation: 111
Quality: Dummy
Resistivity: 10 - 100 Ohm cm
Surface: 2-side polished
Thickness: 401 - 500 µm