Skip to main content

CZ-Si wafer 4 inch 500 um (100) SSP B-doped

Dummy CZ-Si wafer 500 µm 100

Product information "CZ-Si wafer 4 inch 500 um (100) SSP B-doped"

Dummy CZ-Si wafer 4 inch, thickness = 500 ± 50 µm, (100), 1-side polished, p-type (Boron), 0.001 - 100 Ohm cm, not particle-specified, units of 25 wafers (carriers)

Diameter (round): 4 inch
Material: CZ-Si
Orientation: 100
Quality: Dummy
Resistivity: 0.1 - 1 Ohm cm
Surface: 1-side polished
Thickness: 401 - 500 µm