Skip to main content

CZ-Si wafer 4 inch 400 um (100) DSP B-doped

Prime CZ-Si wafer 400 µm 100

Product information "CZ-Si wafer 4 inch 400 um (100) DSP B-doped"

Prime CZ-Si wafer 4 inch, thickness = 400 ± 15 µm, (100), 2-side polished, p-type (Boron), TTV < 5 µm, 0.1 - 1 Ohm cm

Diameter (round): 4 inch
Material: CZ-Si
Orientation: 100
Quality: Prime
Resistivity: 0.1 - 1 Ohm cm
Surface: 2-side polished
Thickness: 301 - 400 µm