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CZ-Si wafer 4 inch 400 um (100) DSP B-doped

Prime CZ-Si wafer 400 µm 100

Product information "CZ-Si wafer 4 inch 400 um (100) DSP B-doped"

Prime CZ-Si wafer 4 inch, thickness = 400 ± 15 µm, (100), 2-side polished, p-type (Boron), TTV < 5 µm, 0.1 - 1 Ohm cm