CZ-Si wafer 4 inch 325 um (100) SSP B-doped
Prime CZ-Si wafer 325 µm 100
| Quantity | Unit price |
|---|---|
| To 4 |
€38.00*
|
| To 9 |
€27.20*
|
| To 24 |
€21.60*
|
| To 49 |
€16.00*
|
| To 99 |
€15.00*
|
| To 299 |
€14.50*
|
| From 300 |
€14.00*
|
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Product number:
WSD40325250B1314SNN1
Product information "CZ-Si wafer 4 inch 325 um (100) SSP B-doped"
Prime CZ-Si wafer 4 inch, thickness = 325 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm
| Diameter (round): | 4 inch |
|---|---|
| Material: | CZ-Si |
| Orientation: | 100 |
| Quality: | Prime |
| Resistivity: | 1 - 10 Ohm cm |
| Surface: | 1-side polished |
| Thickness: | 301 - 400 µm |