Skip to main content

CZ-Si wafer 4 inch 300 um (100) SSP P-doped

Prime CZ-Si wafer 300 µm 100

Product information "CZ-Si wafer 4 inch 300 um (100) SSP P-doped"

Prime CZ-Si wafer 4 inch, thickness = 300 ± 25 µm, (100), 1-side polished, n-type (Phosphor), TTV < 10 µm, 1 - 10 Ohm cm