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CZ-Si wafer 4 inch 300 um (100) DSP P-doped

Prime CZ-Si wafer 300 µm 100

Product information "CZ-Si wafer 4 inch 300 um (100) DSP P-doped"

Prime CZ-Si wafer 4 inch, thickness = 300 ± 05 µm, (100) +/- 0.3°, 2-side polished, n-type (Phosphor) TTV < 3 µm, Bow/Warp < 25 µm, 2 - 10 Ohm cm, Laser-marking SEMI M13, 1.8-2 mm height, code: 100-Nxxxx-YYY (xxxx = consecutive number, YYY = fixed number defined by customer)

Diameter (round): 4 inch
Material: CZ-Si
Orientation: 100
Quality: Prime
Resistivity: 1 - 10 Ohm cm
Surface: 2-side polished
Thickness: 201 - 300 µm