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CZ-Si wafer 4 inch 1000 um (100) DSP B-doped

Prime CZ-Si wafer 1000 µm 100

Product information "CZ-Si wafer 4 inch 1000 um (100) DSP B-doped"

Prime CZ-Si wafer 4 inch, thickness = 1000 ± 25 µm, (100), 2-side polished, p-type (Boron), TTV < 10 µm, 1 - 50 Ohm cm, < 20 particles @ 0,3 µm, 2 SEMI flats

Diameter (round): 4 inch
Material: CZ-Si
Orientation: 100
Quality: Prime
Resistivity: 1 - 10 Ohm cm
Surface: 2-side polished
Thickness: 701 - 1000 µm