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CZ-Si wafer 4 inch 0525 µm (110), SSP,B-doped

Prime CZ-Si wafer 525 µm 110

Product information "CZ-Si wafer 4 inch 0525 µm (110), SSP,B-doped"

Prime CZ-Si-Wafer 4 inch, thickness = 525 ± 25 µm, (110), 1-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 2 SEMI Flats (Primary Flat @ [111], S Flat @ [111] 109.5° CW from PF)