CZ-Si wafer 4 inch 0525 µm (110), SSP,B-doped
Prime CZ-Si wafer 525 µm 110
| Quantity | Unit price |
|---|---|
| To 4 |
€54.00*
|
| To 9 |
€43.20*
|
| To 24 |
€37.60*
|
| To 49 |
€32.00*
|
| To 99 |
€28.00*
|
| To 199 |
€25.00*
|
| From 200 |
€23.00*
|
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Product number:
WSE40525250B1314SNN1
Product information "CZ-Si wafer 4 inch 0525 µm (110), SSP,B-doped"
Prime CZ-Si-Wafer 4 inch, thickness = 525 ± 25 µm, (110), 1-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 2 SEMI Flats (Primary Flat @ [111], S Flat @ [111] 109.5° CW from PF)
| Diameter (round): | 4 inch |
|---|---|
| Material: | CZ-Si |
| Orientation: | 110 |
| Quality: | Prime |
| Resistivity: | 1 - 10 Ohm cm |
| Surface: | 1-side polished |
| Thickness: | 501 - 700 µm |