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CZ-Si wafer 3 inch 640 um (100) SSP P-doped

Prime CZ-Si wafer 640 µm 100

Product information "CZ-Si wafer 3 inch 640 um (100) SSP P-doped"

Prime CZ-Si wafer 3 inch, thickness = 640 ± 25 µm, (100), 1-side polished, n-type (Phosphor) TTV < 10 µm, 1 - 10 Ohm cm, 2 flats, surface roughness < 1 nm

Diameter (round): 3 inch
Material: CZ-Si
Orientation: 100
Quality: Prime
Resistivity: 1 - 10 Ohm cm
Surface: 1-side polished
Thickness: 501 - 700 µm