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CZ-Si wafer 3 inch 450 um (100) SSP B-doped

Prime CZ-Si wafer 450 µm 100

Product information "CZ-Si wafer 3 inch 450 um (100) SSP B-doped"

Prime CZ-Si wafer 3 inch (76,2 mm +/- 0.3 mm), thickness = 450 ± 10 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 1 - 20 Ohm cm, Bow/Warp < 30 µm, Ra< 1 nm, 1 Flat [mm] 22 ± 1 mm, Edge Rounding 0.25 mmR