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CZ-Si wafer 3 inch 420 um (111) SSP B-doped

Dummy CZ-Si wafer 420 µm 111

Product information "CZ-Si wafer 3 inch 420 um (111) SSP B-doped"

Dummy CZ-Si wafer 3 inch, thickness = 420 ± 25 µm, (111), 1-side polished, p-type (Boron), 0.001 - 1 Ohm cm, units of 125 wafers in cakeboxes, not particle-specified, tiny scratches possible

Diameter (round): 3 inch
Material: CZ-Si
Orientation: 111
Quality: Dummy
Resistivity: 0.01 - 0.1 Ohm cm
Surface: 1-side polished
Thickness: 401 - 500 µm