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CZ-Si wafer 3 inch 380 um (100) SSP B-doped

Dummy CZ-Si wafer 380 µm 100

Product information "CZ-Si wafer 3 inch 380 um (100) SSP B-doped"

Dummy CZ-Si wafer 3 inch, thickness = 380 ± 25 µm, (100), 1-side polished, p-type (Boron), 0.001 - 100 Ohm cm, not particle specified, tiny scratches possible, units of 25 wafers in standard boxes with carriers

Diameter (round): 3 inch
Material: CZ-Si
Orientation: 100
Quality: Dummy
Resistivity: 0.1 - 1 Ohm cm
Surface: 1-side polished
Thickness: 301 - 400 µm