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CZ-Si wafer 3 inch 380 um (100) SSP B-doped

Prime CZ-Si wafer 380 µm 100

Product information "CZ-Si wafer 3 inch 380 um (100) SSP B-doped"

Prime CZ-Si wafer 3 inch, thickness = 380 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 20 µm, 1 - 50 Ohm cm, in units of 25 wafers (cassette package)