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CZ-Si wafer 1 inch 280 um (100) SSP B-doped

Prime CZ-Si wafer 280 µm 100

Product information "CZ-Si wafer 1 inch 280 um (100) SSP B-doped"

Prime CZ-Si wafer 1 inch, thickness = 280 ± 25 µm, (100), 1-side polished, p-type (Boron), TTV < 10 µm, 0.001 - 0.05 Ohm cm, no flat