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CZ-Si wafer 1 inch 275 um (100) SSP B-doped

Dummy CZ-Si wafer 275 µm 100

Product information "CZ-Si wafer 1 inch 275 um (100) SSP B-doped"

Dummy CZ-Si wafer 1 inch, thickness = 275 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 1 - 20 Ohm cm, no flat, units of 25 wafers, not particle specified (packaging leaves back particles which need to be cleaned before being used in particle-critical applications)