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BOE 7:1 (87,5 : 12,5) - 2.50 l - VLSI - EVE/EUD!

TECHNIC France

BOE is mainly used for etching glasses, quartz and SiO2 films.

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Product number: TBOV1025

Manufacturer: TECHNIC France

Product information "BOE 7:1 (87,5 : 12,5) - 2.50 l - VLSI - EVE/EUD!"

BOE 7:1

Buffered Oxide Etch

General Information

BOE is mainly used for etching glasses, quartz and SiO2 films. We supply BOE 7:1 = buffered hydrofluoric acid (HF : NH4F = 12.5 : 87.5%) in VLSI-quality, which is the usual purity grades applied in semiconductor processing and micro-electronics.

NOTE: BOE must be stored and transported above +12.5°C. Below this critical temperature of 12.5°C the material forms particles (little crystals). Since these crystals have a higher density, they will accumulate at the bottom of the bottle and will only be completely re-dissolved when the material is stored at temperatures of 30 - 35°C for some days. After this procedure the crystals should be re-dissolved completely and the BOE can be then used without restrictions.

Further Information

MSDS:
Safety Data Sheet BOE 7:1 (VLSI) english
Sicherheitsdatenblatt BOE 7:1 (VLSI) german

Specs:
Specs BOE 7:1 (VLSI)

Application Notes:
Wet Etching english
Nasschemisches Ätzen german

Further Information about Processing

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Au etch 200 Gold Etchant General Information Au etch 200 is a non-hazardous, cyanide-free, slightly alkaline etchant for Au. The etchant is used for the wet-chemical patterning of Au layers with selectivity to metals like Pt, Ni, Cr, Ti, Al. Common areas of use for semiconductor fabrication or micro system technology. Product Properties Low undercut (in the range of the layer thickness), minimum feature size < 1 µm Selectivity to many materials, e.g. common metals used in electroplating industry Available in different purity grades Compatible to resist masking Not hazardous substance and easy to handle Selectivity Au etch 200 is compatible/etches selective to following materials: Resists: common Novolak as masking resist (e.g. AZ® Photoresist) Metals: no attack on Pt, Ni, Cr, Ti, Al, Ta Metals: attacked Au, Cu Semiconductor materials: Si, SiO2, Si3N4 Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details. Etching Rate Under normal condition, the etching rate is around 40 nm/min (at 50°C). The mixed etching solution is stable over time and can be used multiple times depending on the requirements of application. It is recommended to dispose the solution at the latest, when the etching rate has changed by 20%. Further Information MSDS: Safety Data Sheet Au etch 200 english Sicherheitsdatenblatt Au etch 200 german TDS: Technical Data Sheet Au etch 200 english Technical Data Sheet Au etch 200 german Application Notes: Wet Etching english Nasschemisches Ätzen german Wet Etching of Metals english Nasschemisches Ätzen von Metallen german Further Information about Processing

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TechniEtch Al80 Aluminium Etchant General Information TechniEtch Al80 is a ready-to-use etching mixture based on phosphoric acid, nitric acid and acetic acid for aluminium etching. Our aluminium etchant TechniEtch Al80 has the composition H3PO4 : HNO3 : CH3COOH* : H2O = 80% : 5% : 5% : 10% comes in MOS quality. Product Properties High etch rate at room temperature. High stability even in presence of metal contamination Loading & bath life mainly dependent of process temperature, tool and extraction flow Selectivity TechniEtch Al80 is compatible/etches selective to following materials: Metals: no attack on Au, Pt Metals: attack on Al Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details. Further Information MSDS: Safety Data TechniEtch Al80 (MOS) english Sicherheitsdatenblatt TechniEtch Al80 (MOS) german TDS: Technical Data Sheet TechniEtch Al80 (MOS) english Specs: Specs TechniEtch Al80 (MOS) Application Notes: Wet Etching english Nasschemisches Ätzen german Wet Etching Metals english Nasschemisches Ätzen von Metallen german Further Information about Processing

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TechniEtch Cr01 Chromium Etchant General Information TechniEtch Cr01 is a ready-to-use etching mixture based on ceric ammonium nitrate and perchloric acid for Cr etching. TechniEtch Cr01 consists of ceric ammonium nitrate : Perchloric acid : water = 10.9% : 4.25% : 84.85% with an etching rate of about 60 nm/minute at room temperature comes in VLSI quality. Product Properties Cr etch rate at room temperature 60-100 nm/min Al, Ti, W, Ni @ RT from 10nm/min to 200 nm/min Cu, Ag, V are heavily etched > 200 nm/min Au, Pd, Pt are compatible Compatible with positive tone resin Can be diluted down to adjust Cr etch rate Selectivity TechniEtch Cr01 is compatible/etches selective to following materials: Metals: no attack on Au, Pd, Pt Metals: attack on Cr, Fe, Mo, Ni, Al, Ti, W, Cu, Ag, V, Co, Mg, Mn, Sn Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details. Further Information MSDS: Safety Data TechniEtch Cr01 (VLSI) english Sicherheitsdatenblatt TechniEtch Cr01 (VLSI) german TDS: Technical Data Sheet TechniEtch Cr01 (VLSI) english Specs: Specs TechniEtch Cr01 (VLSI) Application Notes: Wet Etching english Nasschemisches Ätzen german Wet Etching Metals english Nasschemisches Ätzen von Metallen german Further Information about Processing

TiW Etch 100 - 5.00 l

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Bottle size: 5.00 l

TiW etch 100 Titan-Wolfram Etchant General Information TiW etch 100 is applied as etchant for Titan-Wolfram layers. Usual applications are found in the semiconductor or microsystem technology field for etching adhesion layers or diffusion barriers. Product Properties Low undercut (in the range of the layer thickness), minimum feature size < 1µm Selectivity to many materials, e.g. common metals used in electroplating industry Compatible to resist masking Selectivity TiW etch 100 is compatible/etches selective to following materials: Resists: common Novolak as masking resist (e.g. AZ® Photoresist) Metals: no attack on Au, Pt, Ni, Cr, Sn Metals: attack on TiW, Cu Cu impact at prolonged exposition Semiconductor materials: Si, SiO2, Si3N4 Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details. Etching Rate Under normal condition, the etching rate is around 1nm/sec (at room temperature). The mixed etching solution is stable over time and can be used multiple times depending on the requirements of application. It is recommended to dispose the solution at the latest, when the etching rate has changed by 20%. Further Information MSDS: Safety Data Sheet TiW etch 100 english Sicherheitsdatenblatt TiW etch 100 german TDS: Technical Data Sheet TiW etch 100 english Technisches Datenblatt TiW etch 100 german Application Notes: Wet Etching english Nasschemisches Ätzen german Wet Etching of Metals english Nasschemisches Ätzen von Metallen german Further Information about Processing

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Bottle size: 5.00 l

TiW etch 200 Titan-Wolfram Etchant General Information TiW etch 200 is applied as etchant for titanium-wolfram layers. Usual applications are found in the semiconductor or microsystem technology field for etching adhesion layers or diffusion barriers. Product Properties Low undercut (in the range of the layer thickness), minimum feature size < 1µm Selectivity to many materials, e.g. common metals used in electroplating industry Compatible to resist masking Selectivity TiW etch 200 is compatible/etches selective to following materials: Resists: common Novolak as masking resist (e.g. AZ® Photoresist) Metals: no attack on Au, Pt, Ni, Cr Metals: attacked TiW, Cu Semiconductor materials: Si, SiO2, Si3N4 Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details. Etching Rate Under normal condition, the etching rate is around 5nm/min (at room temperature). The mixed etching solution is stable over time and can be used multiple times depending on the requirements of application. It is recommended to dispose the solution at the latest, when the etching rate has changed by 20%. Further Information MSDS: Safety Data Sheet TiW etch 200 EN Sicherheitsdatenblatt TiW etch 200 DE TDS: Technical Data Sheet TiW etch 200 EN Technisches Datenblatt TiW etch 200 DE Application Notes: Wet Etching Nasschemisches Ätzen Wet Etching of Metals Nasschemisches Ätzen von Metallen Further Information about Processing

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Hydrofluoric Acid EVE 50% - 2.50 l - VLSI - EVE/EUD!

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Hydrofluoric Acid HF General Information Hydrofluoric Acid is mainly used for etching glasses, quartz and SiO2 films as well as (mixed with HNO3) for isotropic silicon etching. We supply hydrofluoric acid (1%, 10% and 50%) in VLSI-quality, which is the usual purity grades applied in semiconductor processing and micro-electronics. Further Information MSDS: Safety Data Sheet Hydrofluoric Acid 1% (VLSI) english Sicherheitsdatenblatt Hydrofluoric Acid 1% (VLSI) german Safety Data Sheet Hydrofluoric Acid 10% (VLSI) english Sicherheitsdatenblatt Hydrofluoric Acid 10% (VLSI) german Safety Data Sheet Hydrofluoric Acid 50% (VLSI) english Sicherheitsdatenblatt Hydrofluoric Acid 50% (VLSI) german Specs: Specs Hydrofluoric Acid 1% (VLSI) Specs Hydrofluoric Acid 10% (VLSI) Specs Hydrofluoric Acid 50% (VLSI) Application Notes: Wet Etching english Nasschemisches Ätzen german Further Information about Processing

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Phosphoric Acid 85% - 2.50 l - (VLSI)

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Phosphoric Acid H3PO4 General Information Phosphoric Acid mixed with HNO3 is an ingredient of many etching mixtures for e.g. Aluminium and many other metals. We supply Phosphoric Acid (85%) in VLSI-quality, which is the usual purity grades applied in semiconductor processing and micro-electronics. Further Information MSDS: Safety Data Sheet Phosphoric Acid 85% (VLSI) english Sicherheitsdatenblatt Phosphoric Acid 85% (VLSI) german Specs: Specs Phosphoric Acid 85% (VLSI) Application Notes: Wet Etching english Nasschemisches Ätzen german Further Information about Processing

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Nitric Acid 69.5% - 2.50 l - (VLSI) - PERSO+EVE/EUD!

TSAV1025

Nitric Acid HNO3 General Information Nitric Acid is the oxidizing ingredient of many etching mixtures for e.g. Silver, Copper, Aluminium, Silicon, Germanium and (together with HCl as aqua regia) Gold. We supply Nitric Acid (69%) in VLSI-quality, which is the usual purity grades applied in semiconductor processing and micro-electronics. Further Information MSDS: Safety Data Sheet Nitric Acid 69,5% (VLSI) english Sicherheitsdatenblatt Nitric Acid 69,5% (VLSI) german Specs: Specs Nitric Acid 69,5% (VLSI) Application Notes: Wet Etching english Nasschemisches Ätzen german Further Information about Processing

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Hydrochloric Acid 37% - 2.50 l - VLSI - EVE/EUD!

HHCV1025

Hydrochloric Acid HCI General Information Hydrochloric Acid is an ingredient of various etching mixtures for e.g. ITO, Silver and (together with HNO3 as aqua regia) gold. HCl is suited for the removal of oxide films on many metals. Our Hydrochloric Acid (37%) is available in VLSI-quality, which is the usual purity grades applied in semiconductor processing and micro-electronics. NOTE: HCl (hydrogen chloride), is a gas that dissolves very well in water and forms hydrochloric acid in dissolved form. With a molar mass of 36 g / mol, hydrogen chloride is a very small molecule, which means that it can diffuse through polymers very well. For reasons of purity, the hydrochloric acid is filled in HD-PE polymer bottles. In order to protect the bottles from particles and contaminations, these bottles (which are intended for the use in clean rooms) are packed in plastic bags. Over the time of storage, however, the hydrogen chloride diffuses through the wall of the bottle, which is made of polymer, and collects in the foil bag. There is air that contains not only carbon dioxide but also water vapor and it can react with the hydrogen chloride, whereby either a white dust or fine droplets can be found in the foil bag. This happens during storage even if there is not the slightest leak in the bottles. This white dust or the possible fine droplets are the reason why the 37% hydrochlo¬ric acid, unlike e.g. sulfuric acid of the same degree of purity, has not a shelf life of 3 years, but is only „durable“ for 1 year. It is therefore not the reason that the acid would not maintain its purity or its properties, but rather the label and also the bottles or foil bags are increasingly affected by the problem described above in the course of storage. Further Information MSDS: Safety Data Sheet Hydrochloric Acid 37% (VLSI) english Sicherheitsdatenblatt Salzsäure 37% (VLSI) german Specs: Specs Hydrochloric Acid 37% (VLSI) Application Notes: Wet Etching english Nasschemisches Ätzen german Further Information about Processing

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Sulfuric Acid 96% - 2.50 l - VLSI - PERSO+EVE/EUD!

TSWV1025

Sulfuric Acid H2SO4 General Information A mixture of Sulfuric Acid with H2O2 is a powerful stripper for organic impurities or residuals on substrates. We supply Sulfuric Acid (96%) in VLSI-quality, which is the usual purity grades applied in semiconductor processing and micro-electronics. Further Information MSDS: Safety Data Sheet Sulfuric Acid 96% (VLSI) english Sicherheitsdatenblatt Sulfuric Acid 96% (VLSI) german Specs: Specs Sulfuric Acid 96% (VLSI) Application Notes: Wet Etching english Nasschemisches Ätzen german Further Information about Processing