Au etch 200 - 5.00 l

Cr etch 210 Chromium Etchant   General Information Cr etch 210 is an alkaline etchant for Cr. The etchant is used for the wet-chemical patterning or removal of thin Cr layers with selectivity to metals like Au, Sn, Pt, Cu, Ni, Ti, Ta. Common areas of use are for semiconductor fabrication or microsystem technology, e.g. for the removal or patterning of a Cr barrier or adhesion layer in a plating seed stack. Product Properties Low undercut (in the range of the layer thickness), minimum feature size < 1µm Selectivity to many materials, e.g. common metals used in electroplating industry Available in different purity grades Compatible to resist mask Use at room temperature Increase of the etching rate by increased temperature up to 40°C Selectivity Cr etch 210 is compatible/etches selective to following materials: Resists: common Novolak as masking resist (e.g. AZ® Photoresist) Metals: no attack on Au, Sn, Pt, Cu, Ni, Ti, Ta Metals: attacked Cr Semiconductor materials: Si, SiO2, Si3N4 Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details. Etching Rate Under normal condition, the etching rate is around 10 to 15nm/min at 40 °C (accordingly lower at room temperature). A sputtered 30nm Cr layer is etched in about 180 seconds. The mixed etching solution is stable over time and can be used multiple times depending on the requirements of application. It is recommended to dispose the solution at the latest, when the etching rate has changed by 20%. Further Information MSDS: Safety Data Sheet Cr etch 210 english Sicherheitsdatenblatt Cr etch 210 german TDS: Technical Data Sheet Cr etch 210 english Technical Data Sheet Cr etch 210 german Application Notes: Wet Etching english Nasschemisches Ätzen german Wet Etching of Metals english Nasschemisches Ätzen von Metallen german Further Information about Processing

AX 100 Activator   General Information AX 100 is an acidic solution for activating and pretreating seed layers and metallic surfaces for electroplating, on which a direct metallization may cause problems regarding the adhesive strength. This applies e.g. for the electroplating of Au on Ni surfaces or direct electroplating on Ti or TiW layers. AX 100 activates metallic surfaces before electroplating and allows a better adhesive strength of electroplated layers on metallic surfaces, which tend to oxidation. Common fields of application are semiconductor fabrication and microsystem technology. Product Properties Low or none etch attack on metallic surfaces Compatible to many materials, e.g. common metals used in electroplating industry Compatible to resist masking Not poisonous substance and easy to handle Moderate operation temperature of about 40°C Selectivity AX 100 is compatible/etches selective to following materials: Resists: common Novolak as masking resist (e.g. AZ® Photoresist) Metals: no attack on Ni, Ti, TiW, Ta, Cu Semiconductor materials: Si, SiO2, Si3N4 Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details. Further Information MSDS: Safety Data Sheet AX 100 english Sicherheitsdatenblatt AX 100 german TDS: Technical Data Sheet AX 100 english Application Notes: Further Information about Processing

Cu etch 100 Copper Etchant   General Information Cu etch 100 is an alkaline etchant for Cu and is used for the wet-chemical removal of Cu layers with selectivity to metals like Ni, Au, Cr, Sn, Ti. Common areas of use are for semiconductor fabrication or microsystem technology. Product Properties High etching rate and rate of under etching with Cu as sacrificial layer Selectivity to many materials, e.g. common metals used in electroplating industry Available in different purity grades Compatible to resist masking Usage at room temperature Selectivity Cu etch 100 is compatible/etches selective to following materials: Resists: common Novolak as masking resist (e.g. AZ® Photoresist) Metals: no attack on Ni, Au, Cr, Sn, Ti, Pt, Ta Metals: attacked Cu, TiW, Ag, Zn Semiconductor materials: Si, SiO2, Si3N4 Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details. Etching Rate Under normal condition, the etching rate is around 3 to 3.5µm/min (at RT). The mixed etching solution is not stable over time (mixture of two components), but can be used multiple times depending on the requirements of application. It is recommended to dispose the solution at the latest, when the etching rate has changed by 20%. Further Information MSDS: Safety Data Sheet Cu etch 100 english Sicherheitsdatenblatt Cu etch 100 german TDS: Technical Data Sheet Cu etch 100 english Technical Data Sheet Cu etch 100 german Application Notes: Wet Etching english Nasschemisches Ätzen german Wet Etching of Metals english Nasschemisches Ätzen von Metallen german Further Information about Processing

Cu etch 150 Copper Etchant   General Information Cu etch 150 is an alkaline etchant for Cu and is used for the wet-chemical removal of Cu layers with selectivity to metals like Ni, Au, Cr, Sn, Ti. Common areas of use are for semiconductor fabrication or microsystem technology. Product Properties Selectivity to many materials, e.g. common metals used in electroplating industry Available in different purity grades Compatible to resist masking Usage at room temperature Selectivity Cu etch 150 is compatible/etches selective to following materials: Resists: common Novolak as masking resist (e.g. AZ® Photoresist) Metals: no attack on Ni, Au, Cr, Sn, Ti, Pt, Ta Metals: attacked Cu, TiW, Ag, Zn Semiconductor materials: Si, SiO2, Si3N4 Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details. Etching Rate Under normal condition, the etching rate is around 100 to 150nm/min (at RT). The mixed etching solution is not stable over time (mixture of two components), but can be used multiple times depending on the requirements of application. It is recommended to dispose the solution at the latest, when the etching rate has changed by 20%. Further Information MSDS: Safety Data Sheet Cu etch 150 english Sicherheitsdatenblatt Cu etch 150 german TDS: Technical Data Sheet Cu etch 150 english Technical Data Sheet Cu etch 150 german Application Notes: Wet Etching english Nasschemisches Ätzen german Wet Etching of Metals english Nasschemisches Ätzen von Metallen german Further Information about Processing

Cu etch 200 UBM Copper Etchant   General Information Cu etch 200 UBM is a slightly alkaline etchant for Cu and is used for the wet-chemical removal of Cu seed layers with selectivity to metals like Ni, Au, Cr, Sn, Ti, Al. Common areas of use are for semiconductor fabrication or microsystem technology especially for the removal of seed layers after the plating of under-bump-metallization (UBM). Product Properties Selectivity to many materials, e.g. common metals used in electroplating industry Very small dimension lost Available in different purity grades Compatible to resist masking Usage at room temperature Selectivity Cu etch 200 UBM is compatible/etches selective to following materials: Resists: common Novolak as masking resist (e.g. AZ® Photoresist) Metals: no attack on Ni, Au, Cr, Sn, Ti, Al, Pt Metals: attack on Cu, Ag Semiconductor materials: Si, SiO2, Si3N4 Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details. Etching Rate Under normal condition, the etching rate is around 200 to 250nm/min (at RT). The etching solution stable over time and can be used multiple times depending on the requirements of application. It is recommended to dispose the solution at the latest, when the etching rate has changed by 20%. Further Information MSDS: Safety Data Sheet Cu etch 200 english Sicherheitsdatenblatt Cu etch 200 german TDS: Technical Data Sheet Cu etch 200 english Technical Data Sheet Cu etch 200 german Application Notes: Wet Etching english Nasschemisches Ätzen german Wet Etching of Metals english Nasschemisches Ätzen von Metallen german Further Information about Processing

TiW etch 100 Titan-Wolfram Etchant   General Information TiW etch 100 is applied as etchant for titanium-for the wet-chemical patterning of TiW layers with selectivity to metals like Au, Pt, Ni, Cr, Sn. Usual applications are found in the semiconductor or microsystem technology field for etching adhesion layers or diffusion barriers. Product Properties Low undercut (in the range of the layer thickness), minimum feature size < 1µm Selectivity to many materials, e.g. common metals used in electroplating industry Compatible to resist masking Selectivity TiW etch 100 is compatible/etches selective to following materials: Resists: common Novolak as masking resist (e.g. AZ® Photoresist) Metals: no attack on Au, Pt, Ni, Cr, Sn Metals: attack on TiW, Cu Cu impact at prolonged exposition Semiconductor materials: Si, SiO2, Si3N4 Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details. Etching Rate Under normal condition, the etching rate is around 1nm/sec (at room temperature). The mixed etching solution is stable over time and can be used multiple times depending on the requirements of application. It is recommended to dispose the solution at the latest, when the etching rate has changed by 20%. Further Information MSDS: Safety Data Sheet TiW etch 100 english Sicherheitsdatenblatt TiW etch 100 german TDS: Technical Data Sheet TiW etch 100 english Technisches Datenblatt TiW etch 100 german Application Notes: Wet Etching english Nasschemisches Ätzen german Wet Etching of Metals english Nasschemisches Ätzen von Metallen german Further Information about Processing

TiW etch 200 Titan-Wolfram Etchant   General Information TiW etch 200 is applied as etchant for titanium-for the wet-chemical patterning of TiW layers with selectivity to metals like Au, Pt, Ni, Cr. Usual applications are found in the semiconductor or microsystem technology field for etching adhesion layers or diffusion barriers. Product Properties Low undercut (in the range of the layer thickness), minimum feature size < 1µm Selectivity to many materials, e.g. common metals used in electroplating industry Compatible to resist masking Selectivity TiW etch 200 is compatible/etches selective to following materials: Resists: common Novolak as masking resist (e.g. AZ® Photoresist) Metals: no attack on Au, Pt, Ni, Cr Metals: attacked TiW, Cu Semiconductor materials: Si, SiO2, Si3N4 Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details. Etching Rate Under normal condition, the etching rate is around 5nm/min (at room temperature). The mixed etching solution is stable over time and can be used multiple times depending on the requirements of application. It is recommended to dispose the solution at the latest, when the etching rate has changed by 20%. Further Information MSDS: Safety Data Sheet TiW etch 200 EN Sicherheitsdatenblatt TiW etch 200 DE TDS: Technical Data Sheet TiW etch 200 EN Technisches Datenblatt TiW etch 200 DE Application Notes: Wet Etching Nasschemisches Ätzen Wet Etching of Metals Nasschemisches Ätzen von Metallen Further Information about Processing