AZ TFP-650F5 (15CP) Photoresist - 3.785 l

AZ® 1505 Positive Thin Resists for Wet Etching   General Information The AZ® 1500 photoresist series yields an improved adhesion for all common wet etching processes. The lateral resolution depends on the resist film thickness and reaches down to sub-µm. The high resolution and adhesion of the AZ® 1505 make this resist a commonly used resist mask for Cr etching in photo mask production. At 4000 rpm, a coating thickness of approx. 500 nm can be attained. A coating thickness of approx. 400 - 800 nm can also be achieved by varying the spin speed. Product Properties Improved resist adhesion to all common substrate materials Broad process parameter window for stable and reproducible litho-processes High development rate Compatible with all common developers (NaOH-, KOH- or TMAH-based) Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range approx. 0.4 – 0.8 µm Developers If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based **AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent. Further Information MSDS: Safety Data Sheet AZ® 1505 Photoresist english Sicherheitsdatenblatt AZ® 1505 Fotolack german TDS: Technical Data Sheet AZ® 1505 Photoresist english Application Notes: Further Information about Photoresist Processing

AZ® 1512 HS Positive Thin Resists for Wet Etching   General Information The AZ® 1500 photoresist series yields an improved adhesion for all common wet etching processes. The lateral resolution depends on the resist film thickness and reaches down to sub-µm. The very high photo active compound concentration of the AZ® 1512 HS maximises the resist contrast (very high development rate, minimized dark erosion). At 4000 rpm, a coating thickness of approx. 1.2 µm can be attained. A coating thickness of approx. 1.0 – 1.8 µm can also be achieved by varying the spin speed. Product Properties Improved resist adhesion to all common substrate materials Broad process parameter window for stable and reproducible litho-processes High development rate Compatible with all common developers (NaOH-, KOH- or TMAH-based) Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range approx. 1.0 – 1.8 µm Developers If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF** developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent. Further Information MSDS: Safety Data Sheet AZ® 1512 HS Photoresist english Sicherheitsdatenblatt AZ® 1512 HS Fotolack german TDS: Technical Data Sheet AZ® 1512 HS Photoresist english Application Notes: Further Information about Photoresist Processing

AZ® 1514H Positive Thin Resists for Wet Etching   General Information The AZ® 1500 photoresist series yields an improved adhesion for all common wet etching processes. The lateral resolution depends on the resist film thickness and reaches down to sub-µm. A special resin further improves the resist adhesion on most common (metallic) substrates. Resist film thickness at 4000 rpm approx. 1.4 µm, via variations of the spin speed approx. 1.1 - 2 µm attainable. Product Properties Improved resist adhesion to all common substrate materials Broad process parameter window for stable and reproducible litho-processes High development rate Compatible with all common developers (NaOH-, KOH- or TMAH-based) Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents, or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range approx. 1.1 µm – 2.0 µm Developers If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based **AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent. Further Information MSDS: Safety Data Sheet AZ® 1514 H Photoresist english Sicherheitsdatenblatt AZ® 1514 H Fotolack german TDS: Technical Data Sheet AZ® 1514 H Photoresist english Application Notes: Further Information about Photoresist Processing

AZ® 1518 Positive Thin Resists for Wet Etching   General Information The AZ® 1500 photoresist series yields an improved adhesion for all common wet etching processes. The lateral resolution depends on the resist film thickness and reaches down to sub-µm. The elevated resist film thickness of the AZ® 1518 improve the stability of the resist mask for wet etching processes. At 4000 rpm, a coating thickness of approx. 1.8 µm can be attained. A coating thickness of approx. 1.5 – 3.0 µm can also be achieved by varying the spin speed. Product Properties Improved resist adhesion to all common substrate materials Broad process parameter window for stable and reproducible litho-processes High development rate Compatible with all common developers (NaOH-, KOH- or TMAH-based) Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range approx. 1.5 µm – 3.0 µm Developers If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. AZ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent. Further Information MSDS: Safety Data Sheet AZ® 1518 Photoresist english Sicherheitsdatenblatt AZ® 1518 Fotolack german TDS: Technical Data Sheet AZ® 1518 Photoresist english Application Notes: Further Information about Photoresist Processing

AZ® ECI 3007 High Resolution with Broad Process Window   General Information The AZ® ECI 3000 series is a modern, state-of-the-art positive resist series. The resolution potential as well as the process stability allows feature sizes close to the theoretical minimum attainable with broadband (non-DUV) resists. AZ® ECI 3000 resists are a suitable series for both wet and dry chemical processes due to their good adhesion and thermal stability. The resist are available in three viscosity grades AZ® ECI 3007 (0.7 µm resist film thickness at 4000 rpm), AZ® ECI 3012 (1.2 µm) and AZ® ECI 3027 (2.7 µm). The very high resolution potential allows lateral structural sizes down to 300 nm and opens a comparatively large and stable process window at lower resolution requirements. These resists can be developed with NaOH, KOH or TMAH based developers. Product Properties Very high resolution Optimized resist adhesion to all common substrate materials Steep resist-sidewalls and high aspect ratio for dry etching or ion implantation Broad process parameter window for stable and reproducible litho-processes Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range approx. 0.5 - 1 µm Developers If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® ECI 3007 Photoresist english Sicherheitsdatenblatt AZ® ECI 3007 Fotolack german TDS: Technical Data Sheet AZ® ECI 3000 Series english Application Notes: Further Information about Photoresist Processing

AZ® ECI 3012 High Resolution with Broad Process Window   General Information The AZ® ECI 3000 series is a modern, state-of-the-art positive resist series. The resolution potential as well as the process stability allows feature sizes close to the theoretical minimum attainable with broadband (non-DUV) resists. AZ® ECI 3000 resists are a suitable series for both wet and dry chemical processes due to their good adhesion and thermal stability. The resist are available in three viscosity grades AZ® ECI 3007 (0.7 µm resist film thickness at 4000 rpm), AZ® ECI 3012 (1.2 µm) and AZ® ECI 3027 (2.7 µm). The very high resolution potential allows lateral structural sizes down to 300 nm and opens a comparatively large and stable process window at lower resolution requirements. These resists can be developed with NaOH, KOH or TMAH based developers.   *450 nm resist lines with the AZ® ECI 3012 at approx. 1.2 µm film thickness. Product Properties Very high resolution Optimized resist adhesion to all common substrate materials Steep resist sidewalls and high aspect ratio for dry etching or ion implantation -Broad process parameter window for stable and reproducible litho-processes Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range approx. 0.9 – 1.5 µm Developers If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® ECI 3012 Photoresist english Sicherheitsdatenblatt AZ® ECI 3012 Fotolack german TDS: Technical Data Sheet AZ® ECI 3012 Photoresist english Technical Data Sheet AZ® ECI 3000 Series english Application Notes: Further Information about Photoresist Processing

AZ® ECI 3027 High Resolution with Broad Process Window   General Information The AZ® ECI 3000 series is a modern, state-of-the-art positive resist series. The resolution potential as well as the process stability allows feature sizes close to the theoretical minimum attainable with broadband (non-DUV) resists. AZ® ECI 3000 resists are a suitable series for both wet and dry chemical processes due to their good adhesion and thermal stability. The resist are available in three viscosity grades AZ® ECI 3007 (0.7 µm resist film thickness at 4000 rpm), AZ® ECI 3012 (1.2 µm) and AZ® ECI 3027 (2.7 µm). The very high resolution potential allows lateral structural sizes down to 300 nm and opens a comparatively large and stable process window at lower resolution requirements. These resists can be developed with NaOH, KOH or TMAH based developers.   900 nm resist lines with the AZ® ECI 3027 at approx. 2.7 µm resist film thickness. Product Properties Very high resolution Optimized resist adhesion to all common substrate materials Steep resist-sidewalls and high aspect ratio for dry etching or ion implantation Broad process parameter window for stable and reproducible litho-processes Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range approx. 2 – 3.5 µm Developers If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for a required resolution < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 as remover. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® ECI 3027 Photoresist english Sicherheitsdatenblatt AZ® ECI 3027 Fotolack german TDS: Technical Data Sheet AZ® ECI 3000 Series english Application Notes: Further Information about Photoresist Processing

AZ® MIR 701 (11CPS) High Resolution and Temperature Stability   General Information AZ® 701 MIR Series for 0.7 – 3.0 µm Resist Film Thickness (g-, h- and I-line) As thermally stable (softening point > 130°C), high-resolution positive resist, the AZ® 701 MIR (11CPS) is optimised especially for dry chemical etching of fine to very fine structures. This resist can be easily further diluted in order to attain even better resolutions, for example in applications of laser-interference lithography. We sell this resist in two different viscosities of 11CPS, 14CPS and 29CPS. It can be used with common NaOH, KOH or TMAH based developers.   300 nm resist lines attained with the AZ® 701 MIR   1.2µm structure after 130°C hardbake Product Properties Very high resolution, for 0.5 µm and 0.35 µm technology nodes High thermal stability Excellent process latitude for both line/space and contact whole applications Steep resist-sidewalls and high aspect ratio for dry etching or ion implantation Broad process parameter window for stable and reproducible litho-processes Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range AZ® MIR 701 (11CPS): approx. 0.6 – 1.0 µm Developers If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for resist film thicknesses and resolutions < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution and very thin resist layers - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 or AZ® Remover 920. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® MIR 701 (11CPS) Photoresist english Sicherheitsdatenblatt AZ® MIR 701 (11CPS) Fotolack german TDS: Technical Data Sheet AZ® MIR 701 Series english Application Notes: Further Information about Photoresist Processing

AZ® MIR 701 (14CPS) High Resolution and Temperature Stability   General Information AZ® 701 MIR Series for 0.7 – 3.0 µm Resist Film Thickness (g-, h- and I-line) As thermally stable (softening point > 130°C), high-resolution positive resist, the AZ® 701 MIR (14CPS) is optimised especially for dry chemical etching of fine to very fine structures. This resist can be easily further diluted in order to attain even better resolutions, for example in applications of laser-interference lithography. We sell this resist in three different viscosities of 11CPS, 14CPS and 29CPS. It can be used with common NaOH, KOH or TMAH based developers.   300 nm resist lines attained with the AZ® 701 MIR   1.2µm structure after 130°C hardbake Product Properties Very high resolution, for 0.5 µm and 0.35 µm technology nodes High thermal stability Excellent process latitude for both line/space and contact whole applications Steep resist-sidewalls and high aspect ratio for dry etching or ion implantation Broad process parameter window for stable and reproducible litho-processes Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range AZ® MIR 701 (14CPS): approx. 0.6 – 1.1 µm Developers If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for resist film thicknesses and resolutions < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution and very thin resist layers - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 or AZ® Remover 920. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® MIR 701 (14CPS) Photoresist english Sicherheitsdatenblatt AZ® MIR 701 (14CPS) Fotolack german TDS: Technical Data Sheet AZ® MIR 701 Series english Application Notes: Further Information about Photoresist Processing

AZ® MIR 701 (29CPS) High Resolution and Temperature Stability   General Information AZ® 701 MIR Series for 0.7 – 3.0 µm Resist Film Thickness (g-, h- and I-line) As thermally stable (softening point > 130°C), high-resolution positive resist, the AZ® 701 MIR (29CPS) is optimised especially for dry chemical etching of fine to very fine structures. This resist can be easily further diluted in order to attain even better resolutions, for example in applications of laser-interference lithography. We sell this resist in two different viscosities of 11CPS, 14CPS and 29CPS. It can be used with common NaOH, KOH or TMAH based developers.   300 nm resist lines attained with the AZ® 701 MIR   1.2µm structure after 130°C hardbake Product Properties Very high resolution, for 0.5 µm and 0.35 µm technology nodes High thermal stability Excellent process latitude for both line/space and contact whole applications Steep resist-sidewalls and high aspect ratio for dry etching or ion implantation Broad process parameter window for stable and reproducible litho-processes Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range AZ® MIR 701 (29CPS): approx. 1.2 – 2.5 µm Developers If metal ion containing developers can be used, the NaOH-based AZ® 351B in a 1:4 dilution (for resist film thicknesses and resolutions < 1 µm 1:5 - 1:6 dilution recommended) is a suited developer. The KOH-based AZ® 400K (also 1:4 - 1:6 diluted) is possible, but due to its lower selectivity not recommended, if a high resolution or steep resist sidewalls are required. If metal ion free developers have to be used, we recommend the TMAH-based AZ® 326 MIF or AZ® 726 MIF developer, either undiluted, or - for maximum resolution and very thin resist layers - moderately 3:1 - 2:1 (3 parts Developer:1 part of DI-Water) diluted with water. Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents can be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching or during ion implantation), we recommend the NMP-free TechniStrip P1316 or AZ® Remover 920. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® MIR 701 (29CPS) Photoresist english Sicherheitsdatenblatt AZ® MIR 701 (29CPS) Fotolack german TDS: Technical Data Sheet AZ® MIR 701 (29CPS) english Technical Data Sheet AZ® MIR 701 Series english Application Notes: Further Information about Photoresist Processing

AZ® TFP 650 Flat Panel Display Photoresist   General Information The AZ® TFP 650 F5 resist is suitable for spin coat and extrusion coat applications excellent adhesion requirements and/or harsh etching conditions. It is designed to meet the requirements of the flat panel display industry. They are specifically optimized for a variety of applications including spin coat, extrusion coat and roller coat. These production-proven photoresists can be used with a variety of developers and removers, and they are formulated to be compatible with the underlying layers. Product Properties Ultra high photospeed Low dark film loss Optimized resist adhesion Easy removal after hardbake High resistance to harsh etchants Compatible with all common strippers (e.g. with AZ® 100 Remover, organic solvents or aqueous alkaline) g-, h- and i-line sensitive (approx. 320 - 440 nm) Resist film thickness range approx. 1 – 2 µm Developers We recommend the TMAH-based AZ® 726 MIF or AZ® 326 MIF (this one contains surfactants). Removers For non cross-linked resist films the AZ® 100 Remover, DMSO or other common organic solvents cab be used as stripper. If the resist film is cross-linked (e.g. by high temperature steps > 140°C, during plasma processes such as dry etching, or during ion implantation), we recommend the NMP-free such as AZ® 920 Remover or TechniStrip P1316 as remover. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the products AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® TFP 650 Photoresist english Sicherheitsdatenblatt AZ® TFP 650 Fotolack german TDS: Technical Data Sheet AZ® TFP 650 english Information AZ® TFP 650 english Application Notes: Further Information about Photoresist Processing