AZ NLOF 5510 Photoresist - 3.785 l

AZ® 15nXT (115CPS) Thick Negative Resist for Plating   General Information The i-line sensitive negative resist AZ® 15nXT (115CPS) is a thick resist with approx. 3 - 5 µm film thickness and very steep resist sidewalls for e. g. RIE or electroplating, for example. 5 µm lines at 10 µm resist film thickness. 5 µm holes at 10 µm resist film thickness. 5 µm plated CuNi image. 3.6 µm plated CuNi image. Product Features AZ® 15nXT (115CPS) covers a resist film thickness range of - depending on the spin speed - approx. 2 - 3 µm. It is only i-line sensitive and requires a post exposure bake after exposure to complete the cross-linking induced during exposure. The resist structures developed are very vertical with adjusted process parameters, becoming increasingly negative towards thick resist films or - based on the respective resist film thickness - lower exposure doses. If thinner resist films are required, the AZ® 15nXT (115CPS) can be diluted with PGMEA = AZ® EBR Solvent; for thicker layers, the higher viscosity AZ® 15nXT (450CPS) is recommended. AZ® 15nXT (115CPS) is suitable as a mask for the galvanic deposition of e.g. Cu, Ni or Au due to its good adhesion to all common substrate materials and its high chemical stability. Developers For the development of the AZ® 15nXT (115CPS), TMAH-based developers such as the ready-to-use AZ® 326 MIF (immersion development), AZ® 726 MIF (puddle development) or AZ® 2026 MIF are recommended, which promotes residue-free development, especially with cross-linking resists, thanks to an additive. KOH- or NaOH-based developers such as the AZ® 400 K or AZ® 351B are generally not suitable for the AZ® 15nXT (115CPS). If TMAH-based developers cannot be used, an attempt with a KOH-based developer in higher concentration than usual can be considered. Removers If the resist structures have not been thermally cross-linked too much, for example through metallization, stripping or lift-off with organic solvents (acetone rinsed with isopropanol or DMSO) can be successful. For more strongly cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip NI555 or AZ® 910 Remover are recommended, or in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning/ Edge Wall Removal If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is an option. PGMEA is the solvent for AZ® 15nXT (115CPS) anyway and is also recommended for edge wall removal if necessary.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® 15nXT (115CPS) Photoresist english Safety Data Sheet AZ® 15nXT (115CPS) Photoresist german TDS: Technical Data Sheet AZ® 15nXT (115CPS) Photoresist english Technical Data Sheet AZ® 15nXT Series english Application Notes: Further Information about Photoresist Processing

AZ® 15nXT (450CPS) Thick Negative Resist for Plating   General Information The i-line sensitive negative resist AZ® 15nXT (450CPS) is a thick resist with a thickness of approx. 5 - 10 µm and vertical resist sidewalls for RIE or electroplating, for example. 5 µm lines at 10 µm resist film thickness. 5 µm holes at 10 µm resist film thickness. 5 µm plated CuNi image. 3.6 µm plated CuNi image. Product Features AZ® 15nXT (450CPS) covers a resist film thickness range of - depending on the spin speed - approx. 5 - 10 µm. It is only i-line sensitive and requires a post exposure bake after exposure to complete the cross-linking induced during exposure. With adjusted process parameters, the resist structures developed are vertical, increasingly negative towards thick resist films or - based on the respective resist film thickness - lower exposure doses. If thinner resist films are required, the AZ® 15nXT (450CPS) can be diluted with PGMEA = AZ® EBR Solvent. AZ® 15nXT (450CPS) is suitable as a mask for the galvanic deposition of e.g. Cu, Ni or Au due to its good adhesion to all common substrate materials and its high chemical stability. Developers For the development of the AZ® 15nXT (450CPS), TMAH-based developers such as the ready-to-use AZ® 326 MIF (immersion development), AZ® 726 MIF (puddle development) or AZ® 2026 MIF are recommended, which promotes residue-free development, especially with cross-linking resists, thanks to an additive. KOH- or NaOH-based developers such as the AZ® 400 K or AZ® 351B are generally not suitable for the AZ® 15nXT (450CPS). If TMAH-based developers cannot be used, an attempt with a KOH-based developer in higher concentration than usual can be considered. Removers If the resist structures have not been thermally cross-linked too much, for example through metallization, stripping or lift-off with organic solvents (acetone rinsed with isopropanol or DMSO) can be successful. For more strongly cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip NI555 or AZ® 910 Remover are recommended, or in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning/ Edge Wall Removal If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is an option. PGMEA is the solvent for AZ® 15nXT (450CPS) anyway and is also recommended for edge wall removal if necessary.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® 15nXT (450CPS) Photoresist english Safety Data Sheet AZ® 15nXT (450CPS) Photoresist german TDS: Technical Data Sheet AZ® 15nXT (450CPS) Photoresist english Technical Data Sheet AZ® 15nXT Series english Information AZ® 15nXT (450CPS) Photoresist english Application Notes: Further Information about Photoresist Processing

AZ® 125nXT-10B Ultra-Thick Negative Resist for Plating   General Information The AZ® 125nXT-10B is an i-line sensitive, negative ultra-thick resist with steep resist sidewalls and high aspect ratio. 20 µm lines at 60 µm resist film thickness. 15 µm holes at 60 µm resist film thickness. 80 µm plated CuNi image. Product Features The ultra-thick negative resist AZ® 125nXT-10B covers a resist film thickness range of 20 - 50 µm and can be built up and processed to 100 µm and much more with adapted spin profiles. AZ® 125nXT-10B is only i-line sensitive and, as a special feature (for negative resists), does not require a post exposure bake after exposure for cross-linking, i.e. the AZ® 125nXT-10B photopolymerizes. Due to its low absorption, even very thick resist layers can be easily exposed and steep resist sidewalls can be achieved. This and its very good adhesion to all common substrate materials make this resist suitable for the galvanic molding of thick to very thick layers as well as DRIE. With low exposure doses or very thick resist layers - related to the respective resist film thickness - the resist profile becomes slightly negative, since the resist areas close to the substrate experience less cross-linking. If the electroplating process shows that these weakly cross-linked areas of the resist are attacked, but a higher structuring exposure dose is not an option, flood exposure (without a photomask) after development with very high doses can cross-link the resist sidewalls even near the substrate, which, however, makes it more difficult to strip the resist later. Even after such flood exposure, no further post exposure back is necessary. AZ® 125nXT-10B can generally be processed with resist films of less than 20 µm thick, but processing becomes problematic below 10 µm thickness: Since the additive responsible for cross-linking escapes from the resist surface during softbaking, only a few micrometers of the exposed resist surface are removed during development, which accounts for a correspondingly large proportion of the total thickness in the case of thin resist films. Developers AZ® 326 MIF (immersion development), AZ® 726 MIF (puddle development) or AZ® 2026 MIF (which has an additive that promotes residue-free development, especially with cross-linking resists) are recommended for developing the AZ® 125nXT-10B. KOH- or NaOH-based developers such as AZ® 400K or AZ® 351B are generally not suitable for the AZ® 125nXT-10B. If TMAH-based developers cannot be used, a KOH-based developer in higher concentration than usual can be considered. Removers AZ® 125nXT-10B can be removed wet-chemically using conventional strippers, but stripping very thick cross-linked resist structures can be quite a challenge. If organic solvents are preferred for this, (hot) DMSO is recommended, which does not dissolve cross-linked resists, but can detach them from the substrate after a certain exposure time. This process can be accelerated by reducing the degree of cross-linking of the resist near the substrate by using a lower exposure dose. Alternatively, high-performance strippers such as the NMP-free TechniStrip P1316 are recommended, or in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning/ Edge Wall Removal If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is an option. PGMEA is the solvent for AZ® 125nXT-10B anyway and is also recommended for edge wall removal if necessary.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® 125nXT-10B english Safety Data Sheet AZ® 125nXT-10B german TDS: Technical Data Sheet AZ® 125nXT-10B english Application Notes: Further Information about Photoresist Processing

AZ® nLOF 2020 Thick Negative Resist for Lift Off   General Information AZ® nLOF 2020 Photoresist for 2-10 µm Resist Film Thickness (i-line) The AZ® nLOF 2000 series is optimised with undercut resist profiles and high resistance to thermal flow for lift-off applications. The three viscosity grades AZ® nLOF 2020 (2.0 µm resist layer thickness at 4000 rpm), AZ® nLOF 2035 (3.5 µm) and AZ® nLOF 2070 (7.0 µm) cover a large resist layer thickness range with a high possible aspect ratio. A post exposure bake is obligatory to carry out the cross-linking initiated during exposure. Beside the resist types above, MicroChemicals dilutes the AZ® nLOF 2000 series to different thickness levels. 700 nm resist lines attained with the 2.0 µm thick AZ® nLOF 2020. Product Properties AZ® nLOF 2020 for film thickness 2.0 µm @ 3000 rpm i-line sensitive (365 nm), not g- or h-line sensitive Very high thermal stability: Almost no rounding of cross-linked resist patterns up to temperatures of 250°C and more. High chemical stability: Dependant on process parameters, AZ® nLOF 2000 series is stable against many organic solvents as well as strong alkaline media (however, not stable against KOH Si-etches!). The e-beam sensitivity of the AZ® nLOF 2000 series resists allows the combination of fast UV and high-resolution e-beam lithography. (Please contact us for further information!) Reproducible undercut for excellent lift off results High yield in industrial processes due to large process window Developers The recommended developer is the AZ® 2026 MIF which works best with AZ® nLof 2000 series. AZ® 326 MIF or AZ® 726 MIF are possible as well. KOH- or NaOH based developers or AZ® Developer will not give reasonable results. Only AZ® 303 Developer can be used in cases, where TMAH based developers are no option. Removers The recommended stripper for the AZ® nLOF 2000 series is the NMP-free TechniStrip NI555 or AZ® 910 Remover, which is compatible with all common (even alkaline sensitive) substrate materials and can even dissolve (not only peel from the substrate) cross-linked AZ® nLOF 2070 resist films. Solvents such as NMP or the untoxic substitute DMSO are suited removers, if the resist film thickness and degree of crosslinking are not too high. Generally, heating these removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten the resist removal in the case of very thick or strongly cross-linked resist films. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® nLOF2020 Photoresist english Sicherheitsdatenblatt AZ® nLOF2020 Fotolack german TDS: Technical Data Sheet AZ® nLOF2000 Series english Information AZ® nLOF2000 Series english Application Notes: Further Information about Photoresist Processing

AZ® nLOF 2035 Thick Negative Resist for Lift Off   General Information AZ® nLOF 2035 Photoresist for 3-5 µm Resist Film Thickness (i-line) The AZ® nLOF 2000 series is optimised with undercut resist profiles and high resistance to thermal flow for lift-off applications. The three viscosity grades AZ® nLOF 2020 (2.0 µm resist layer thickness at 4000 rpm), AZ® nLOF 2035 (3.5 µm) and AZ® nLOF 2070 (7.0 µm) cover a large resist layer thickness range with a high possible aspect ratio. A post exposure bake is obligatory to carry out the cross-linking initiated during exposure. Beside the resist types above, MicroChemicals dilutes the AZ® nLOF 2000 series to different thickness levels. 700 nm resist lines attained with the 3.5 µm thick AZ® nLOF 2035.* Product Properties AZ® nLOF 2035 for film thickness 3.5 µm @ 3000 rpm i-line sensitive (365 nm), not g- or h-line sensitive Very high thermal stability: Almost no rounding of cross-linked resist patterns up to temperatures of 250°C and more. High chemical stability: Dependant on process parameters, AZ® nLOF 2000 series is stable against many organic solvents as well as strong alkaline media (however, not stable against KOH Si-etches!). The e-beam sensitivity of the AZ® nLOF 2000 series resists allows the combination of fast UV and high-resolution e-beam lithography. (Please contact us for further information!) Reproducible undercut for excellent lift off results High yield in industrial processes due to large process window Developers The recommended developer is the AZ® 2026 MIF which works best with AZ® nLof 2000 series. AZ® 326 MIF or AZ® 726 MIF are possible as well. KOH- or NaOH based developers or AZ® Developer will not give reasonable results. Only AZ® 303 Developer can be used in cases, where TMAH based developers are no option. Removers The recommended stripper for the AZ® nLOF 2000 series is the NMP-free TechniStrip NI555 or AZ® 910 Remover, which is compatible with all common (even alkaline sensitive) substrate materials and can even dissolve (not only peel from the substrate) cross-linked AZ® nLOF 2070 resist films. Solvents such as NMP or the untoxic substitute DMSO are suited removers, if the resist film thickness and degree of crosslinking are not too high. Generally, heating these removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten the resist removal in the case of very thick or strongly cross-linked resist films. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® nLOF2035 Photoresist english Sicherheitsdatenblatt AZ® nLOF2035 Fotolack german TDS: Technical Data Sheet AZ® nLOF2000 Series english Information AZ® nLOF2000 Series english Application Notes: Further Information about Photoresist Processing

AZ® nLOF 2070 Thick Negative Resist for Lift Off   General Information AZ® nLOF 2070 Photoresist for 5-15 µm Resist Film Thickness (i-line) The AZ® nLOF 2000 series is optimised with undercut resist profiles and high resistance to thermal flow for lift-off applications. The three viscosity grades AZ® nLOF 2020 (2.0 µm resist layer thickness at 4000 rpm), AZ® nLOF 2035 (3.5 µm) and AZ® nLOF 2070 (7.0 µm) cover a large resist layer thickness range with a high possible aspect ratio. A post exposure bake is obligatory to carry out the cross-linking initiated during exposure. Beside the resist types above, MicroChemicals dilutes the AZ® nLOF 2000 series to different thickness levels. A pronounced undercut attained with the AZ® nLOF 2070 in a thickness of 22 µm. Product Properties AZ® nLOF 2070 for film thickness 7.0 µm @ 3000 rpm i-line sensitive (365 nm), not g- or h-line sensitive Very high thermal stability: Almost no rounding of cross-linked resist patterns up to temperatures of 250°C and more. High chemical stability: Dependant on process parameters, AZ® nLOF 2000 series is stable against many organic solvents as well as strong alkaline media (however, not stable against KOH Si-etches!). The e-beam sensitivity of the AZ® nLOF 2000 series resists allows the combination of fast UV and high-resolution e-beam lithography. (Please contact us for further information!) Reproducible undercut for excellent lift off results High yield in industrial processes due to large process window Developers The recommended developer is the AZ® 2026 MIF which works best with AZ® nLof 2000 series. AZ® 326 MIF or AZ® 726 MIF are possible as well. KOH- or NaOH based developers or AZ® Developer will not give reasonable results. Only AZ® 303 Developer can be used in cases, where TMAH based developers are no option. Removers The recommended stripper for the AZ® nLOF 2000 series is the NMP-free TechniStrip NI555 or AZ® 910 Remover, which is compatible with all common (even alkaline sensitive) substrate materials and can even dissolve (not only peel from the substrate) cross-linked AZ® nLOF 2070 resist films. Solvents such as NMP or the untoxic substitute DMSO are suited removers, if the resist film thickness and degree of crosslinking are not too high. Generally, heating these removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten the resist removal in the case of very thick or strongly cross-linked resist films. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® nLOF2070 Photoresist english Sicherheitsdatenblatt AZ® nLOF2070 Fotolack german TDS: Technical Data Sheet AZ® nLOF2000 Series english Information AZ® nLOF2000 Series english Application Notes: Further Information about Photoresist Processing

AZ® nLOF 2070 - diluted 1:1.33 - 0.50 µm-grade (e-beam) Thick Negative Resist for Lift Off   General Information AZ® nLOF 2070 Photoresist for 5-15 µm Resist Film Thickness (i-line) The AZ® nLOF 2000 series is optimised with undercut resist profiles and high resistance to thermal flow for lift-off applications. The three viscosity grades AZ® nLOF 2020 (2.0 µm resist layer thickness at 4000 rpm), AZ® nLOF 2035 (3.5 µm) and AZ® nLOF 2070 (7.0 µm) cover a large resist layer thickness range with a high possible aspect ratio. A post exposure bake is obligatory to carry out the cross-linking initiated during exposure. Beside the resist types above, MicroChemicals dilutes the AZ® nLOF 2000 series to different thickness levels. Product Properties AZ® nLOF 2070 for film thickness 7.0 µm @ 3000 rpm i-line sensitive (365 nm), not g- or h-line sensitive Very high thermal stability: Almost no rounding of cross-linked resist patterns up to temperatures of 250°C and more. High chemical stability: Dependant on process parameters, AZ® nLOF 2000 series is stable against many organic solvents as well as strong alkaline media (however, not stable against KOH Si-etches!). The e-beam sensitivity of the AZ® nLOF 2000 series resists allows the combination of fast UV and high-resolution e-beam lithography. (Please contact us for further information!) Reproducible undercut for excellent lift off results High yield in industrial processes due to large process window Developers The recommended developer is the AZ® 2026 MIF which works best with AZ® nLof 2000 series. AZ® 326 MIF or AZ® 726 MIF are possible as well. KOH- or NaOH based developers or AZ® Developer will not give reasonable results. Only AZ® 303 Developer can be used in cases, where TMAH based developers are no option. Removers The recommended stripper for the AZ® nLOF 2000 series is the NMP-free TechniStrip NI555 or AZ® 910 Remover, which is compatible with all common (even alkaline sensitive) substrate materials and can even dissolve (not only peel from the substrate) cross-linked AZ® nLOF 2070 resist films. Solvents such as NMP or the untoxic substitute DMSO are suited removers, if the resist film thickness and degree of crosslinking are not too high. Generally, heating these removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten the resist removal in the case of very thick or strongly cross-linked resist films. Thinning/ Edge Bead Removal We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal. Further Information MSDS: Safety Data Sheet AZ® nLOF2070 Photoresist english Sicherheitsdatenblatt AZ® nLOF2070 Fotolack german TDS: Technical Data Sheet AZ® nLOF2000 Series english Information AZ® nLOF2000 Series english Information AZ® nLOF2070 E-beam english Application Notes: Further Information about Photoresist Processing