AZ NLOF 5510 Photoresist - 3.785 l

AZ^® nLOF 5510

Thermally Stable Negative Resist

General Information

The AZ^® nLOF 5510 is a thin, high-resolution negative resist with high thermal stability. This resist is designed for single layer lift off processes as well as for RIE etching or ion implantation and is compatible with TMAH-based developers.

Product Properties

• AZ^® nLOF 5510 for film thickness 0.8 µm @ 4000 rpm
• i-line sensitive (365 nm), not g- or h-line sensitive
• Very high thermal stability: Almost no rounding of cross-linked resist patterns up to temperatures of 250°C and more
• Resolution down to 0.25 µm
• Can be used for lift off, RIE or implant applications

Developers

Common TMAH based developers are recommended such as AZ^® 326 MIF, AZ^® 726 MIF or AZ^® 2026 MIF Developer.

Removers

The recommended stripper for the AZ^® nLOF 5510 resist is the NMP-free TechniStrip NI555 or AZ^® 910 Remover, which is compatible with all common (even alkaline sensitive) substrate materials and can even dissolve (not only peel from the substrate) cross-linked AZ^® nLOF 5510 resist films. Solvents such as NMP or the untoxic substitute DMSO are suited removers, if the resist film thickness and degree of crosslinking are not too high. Generally, heating these removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten the resist removal in the case of very thick or strongly cross-linked resist films.

Thinning/ Edge Bead Removal

We recommend for thinning and edge bead removal the AZ^® EBR Solvent or PGMEA. AZ^® EBR Solvent 70/30 is possible as well for edge bead removal.

Further Information

MSDS:
Safety Data Sheet AZ^® nLOF5510 Photoresist english
Sicherheitsdatenblatt AZ^® nLOF5510 Fotolack german

TDS:
Technical Data Sheet AZ^® nLOF5510 english

Application Notes:
Further Information about Photoresist Processing