AZ NLOF 2070 Photoresist - 3.785 l












Product information "AZ NLOF 2070 Photoresist - 3.785 l"
AZ® nLOF 2070
Thick Negative Resist for Lift Off
General Information
The i-line sensitive negative resist AZ® nLOF 2070 is with approx. 5 - 10 µm resist film thickness the thickest member of the AZ® nLOF 2000 series, which is primarily optimized for lift-off applications.
A pronounced undercut attained with the AZ® nLOF 2070 in a thickness of 22 µm.
Product Properties
AZ® nLOF 2070 covers a resist film thickness range of - depending on the spin speed - approx. 5 - 10 µm. It is only i-line sensitive and requires a post exposure bake after exposure to complete the cross-linking induced during exposure. The developed resist structures are, as desired for lift-off applications, distinctly negative, since the upper resist areas receive a much higher dose during exposure and thus cross-link more strongly than the resist areas close to the substrate. Using a lower exposure dose, in conjunction with a slightly hotter post exposure bake, this undercut can also be increased significantly to enable more critical lift-off applications (sputtered or thicker layers). If thinner resist layers are required, the AZ® nLOF 2070 can be diluted with PGMEA = AZ® EBR Solvent or the AZ® nLOF 2035 or even thinner AZ® nLOF 2020 can be used, both differing only in the solvent content.
Developers
TMAH-based developers such as the ready-to-use AZ® 326 MIF (immersion development), AZ® 726 MIF (puddle development) or AZ® 2026 MIF (which uses an additive to promote residue-free development, especially with cross-linking resists) are recommended for developing the AZ® nLOF 2070. KOH- or NaOH-based developers such as the AZ® 400K or AZ® 351B are generally not suitable for the AZ® nLOF 2070. If TMAH-based developers cannot be used, an attempt with a KOH-based developer in higher concentration than usual can be considered.
Removers
If the resist structures have not been thermally cross-linked too much, for example through metallization, stripping or lift-off with organic solvents (acetone rinsed with isopropanol or DMSO) can be successful. For more strongly cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip NI555 or AZ® 920 Remover are recommended, or in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07.
Thinning/ Edge Bead Removal
If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is an option. PGMEA is the solvent for AZ® nLOF 2070 anyway and is also recommended for edge wall removal if necessary.
Further Information
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MSDS:
Safety Data Sheet AZ® nLOF2070 Photoresist english
Safety Data Sheet AZ® nLOF2070 Photoresist german
TDS:
Technical Data Sheet AZ® nLOF2000 Series english
Information AZ® nLOF2000 Series english
Application Notes:
Further Information about Photoresist Processing
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Remover