AZ NLOF 2020 Photoresist - 3.785 l
Merck Performance Materials GmbH
AZ® nLOF 2020 is the industrial standard resist for lift off applications with high reproducibility and yield.
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Product number:
1A002020
Manufacturer:
Merck Performance Materials GmbH
Product information "AZ NLOF 2020 Photoresist - 3.785 l"
AZ® nLOF 2020
Thick Negative Resist for Lift Off
General Information
AZ® nLOF 2020 Photoresist for 2-10 µm Resist Film Thickness (i-line) The AZ® nLOF 2000 series is optimised with undercut resist profiles and high resistance to thermal flow for lift-off applications. The three viscosity grades AZ® nLOF 2020 (2.0 µm resist layer thickness at 4000 rpm), AZ® nLOF 2035 (3.5 µm) and AZ® nLOF 2070 (7.0 µm) cover a large resist layer thickness range with a high possible aspect ratio. A post exposure bake is obligatory to carry out the cross-linking initiated during exposure. Beside the resist types above, MicroChemicals dilutes the AZ® nLOF 2000 series to different thickness levels.
700 nm resist lines attained with the 2.0 µm thick AZ® nLOF 2020.
Product Properties
- AZ® nLOF 2020 for film thickness 2.0 µm @ 3000 rpm
- i-line sensitive (365 nm), not g- or h-line sensitive
- Very high thermal stability: Almost no rounding of cross-linked resist patterns up to temperatures of 250°C and more.
- High chemical stability: Dependant on process parameters, AZ® nLOF 2000 series is stable against many organic solvents as well as strong alkaline media (however, not stable against KOH Si-etches!).
- The e-beam sensitivity of the AZ® nLOF 2000 series resists allows the combination of fast UV and high-resolution e-beam lithography. (Please contact us for further information!)
- Reproducible undercut for excellent lift off results
- High yield in industrial processes due to large process window
Developers
The recommended developer is the AZ® 2026 MIF which works best with AZ® nLof 2000 series. AZ® 326 MIF or AZ® 726 MIF are possible as well. KOH- or NaOH based developers or AZ® Developer will not give reasonable results. Only AZ® 303 Developer can be used in cases, where TMAH based developers are no option.
Removers
The recommended stripper for the AZ® nLOF 2000 series is the NMP-free TechniStrip NI555 or AZ® 910 Remover, which is compatible with all common (even alkaline sensitive) substrate materials and can even dissolve (not only peel from the substrate) cross-linked AZ® nLOF 2070 resist films.
Solvents such as NMP or the untoxic substitute DMSO are suited removers, if the resist film thickness and degree of crosslinking are not too high.
Generally, heating these removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten the resist removal in the case of very thick or strongly cross-linked resist films.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal.
Further Information
MSDS:
Safety Data Sheet AZ® nLOF2020 Photoresist english
Sicherheitsdatenblatt AZ® nLOF2020 Fotolack german
TDS:
Technical Data Sheet AZ® nLOF2000 Series english
Information AZ® nLOF2000 Series english
Application Notes:
Further Information about Photoresist Processing
| Chemically amplified: | yes |
|---|---|
| Film thickness: | 1.5 – 3.0 µm |
| Film thickness range: | medium (1.6 - 5.0µm) |
| High thermal stability: | yes |
| Mode: | negative |
| Optimized for: | lift-off |
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Bottle size:
3.785 l
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Thick Negative Resist for Plating
General Information
AZ® 15nXT (115CPS) for 3 - 6 µm Resist Film Thickness (i-line)
The AZ® 15nXT (115CPS) is a negative resist for film thicknesses up to approx. 6 µm, with a resist film thickness of 3.5 µm at 4000 rpm. Its cross-linking character and its very good resist adhesion make it stable, for example, for all conventional electroplating applications. Up to about 6 µm resist film thickness, the resist sidewalls are vertical, with larger film thicknesses, increasingly negative (undercut) so that the moulded metal structures taper towards the top. A post exposure bake is obligatory to carry out the cross-linking initiated during exposure.
5 µm lines at 10 µm resist film thickness.
5 µm holes at 10 µm resist film thickness.
5 µm plated CuNi image.
3.6 µm plated CuNi image.
Product Properties
3 - 6 µm resist film thickness via single-coating
Aqueous alkaline developers, preferably AZ® 2026 MIF
Excellent adhesion, no underplating
Wide substrate compatibility: Cu, Au, Ti, NiFe, …
Wide plating compatibility: Cu, Ni, Au, …
Standard wet stripping processes
Almost vertical sidewall angles
Developers
We recommend the TMAH-based, ready-to-use AZ® 2026 MIF Developer. AZ® 326 MIF and AZ® 726 MIF are possible as well.
Removers
The recommended stripper for the AZ® 15nXT is the NMP-free, nontoxic TechniStrip NI555 or the AZ® 910 Remover, which is compatible with all common (even alkaline sensitive) substrate materials and can even dissolve (not only peel from the substrate) cross linked AZ® 15nXT resist films. Solvents such as NMP or the nontoxic substitute DMSO are suited removers, if the resist film thickness and degree of crosslinking are not too high. Generally, heating these removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten the resist removal in the case of very thick or strongly crosslinked resist films.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the products AZ® EBR Solvent or PGMEA.
Further Information
MSDS:
Safety Data Sheet AZ® 15nXT (115CPS) Photoresist english
Sicherheitsdatenblatt AZ® 15nXT (115CPS) Fotolack german
TDS:
Technical Data Sheet AZ® 15nXT (115CPS) Photoresist english
Technical Data Sheet AZ® 15nXT Series english
Application Notes:
Further Information about Photoresist Processing
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Bottle size:
3.785 l
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Thick Negative Resist for Plating
General Information
AZ® 15nXT (450CPS) for 5 - 20 µm Resist Film Thickness (i-line)
The AZ® 15nXT (450CPS) is a negative resist for film thicknesses up to approx. 20 µm, with a resist film thickness of ~ 6 µm at 4000 rpm. Its cross-linking character and its very good resist adhesion make it stable, for example, for all conventional electroplating applications. Up to about 10 µm resist film thickness, the resist sidewalls are vertical, with larger film thicknesses, increasingly negative (undercut) so that the moulded metal structures taper towards the top. A post exposure bake is obligatory to carry out the cross-linking initiated during exposure.
5 µm lines at 10 µm resist film thickness.
5 µm holes at 10 µm resist film thickness.
5 µm plated CuNi image.
3.6 µm plated CuNi image.
Product Properties
5 - 20 µm resist film thickness via single-coating
Aqueous alkaline developers, preferably AZ® 2026 MIF
Excellent adhesion, no underplating
Wide substrate compatibility: Cu, Au, Ti, NiFe, …
Wide plating compatibility: Cu, Ni, Au, …
Standard wet stripping processes
Almost vertical sidewall angles
Developers
We recommend the TMAH-based, ready-to-use AZ® 2026 MIF Developer. AZ® 326 MIF and AZ® 726 MIF are possible as well.
Removers
The recommended stripper for the AZ® 15nXT is the NMP-free, nontoxic TechniStrip NI555 or the AZ® 910 Remover, which is compatible with all common (even alkaline sensitive) substrate materials and can even dissolve (not only peel from the substrate) cross-linked AZ® 15nXT resist films.
Solvents such as NMP or the nontoxic substitute DMSO are suited removers, if the resist film thickness and degree of cross-linking are not too high.
Generally, heating these removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten the resist removal in the case of very thick or strongly cross-linked resist films.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the products AZ® EBR Solvent or PGMEA.
Further Information
MSDS:
Safety Data Sheet AZ® 15nXT (450CPS) Photoresist english
Sicherheitsdatenblatt AZ® 15nXT (450CPS) Fotolack german
TDS:
Technical Data Sheet AZ® 15nXT (450CPS) Photoresist english
Technical Data Sheet AZ® 15nXT Series english
Information AZ® 15nXT (450CPS) Photoresist english
Application Notes:
Further Information about Photoresist Processing
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Bottle size:
3.785 l
AZ® 125nXT-10B
Ultra-Thick Negative Resist for Plating
General Information
AZ® 125nXT-10B for 25 - 200 µm Resist Film Thickness (i-line)
The AZ® 125nXT-10B is a negative resist for film thicknesses up to over 100 µm with at the same time very high sidewall steepness. And even more (1 mm resist film thickness realized!) with very steep sidewalls and special coating techniques It’s cross-linking and very good resist adhesion make it stable in all conventional electroplating applications. This resist does not require a post exposure bake.
20 µm lines at 60 µm resist film thickness.
15 µm holes at 60 µm resist film thickness.
80 µm plated CuNi image.
Product Properties
30 – 100 µm resist film thickness via single-coating
Up to 1 mm resist film thickness possible
Aqueous alkaline developers (e. g. AZ® 326/726/2026 MIF)
No post exposure bake, photo-polymerization during exposure
No rehydration required, no N2-formation during exposure
Very good adhesion, no underplating
Wet stripping processes (e. g. TechniStrip P1316)
Optimized for electroplating, wet- and dry etching
Developers
We recommend the TMAH-based, ready-to-use AZ® 2026 MIF Developer. AZ® 326 MIF and AZ® 726 MIF are possible as well.
Removers
The recommended stripper for the AZ® 125nXT-10B is the NMP-free TechniStrip P1316, in case of alkaline sensitive substrate materials use the TechniStrip P1331 or TechniStrip MLO07.
Solvents such as NMP or the untoxic substitute DMSO are suited removers, if the resist film thickness and degree of cross-linking are not too high. Generally, heating the removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten the resist removal in the case of very thick resist films.
Resist pattern and plated structures attained with a 60 and 120 µm thick AZ® 125nXT.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the products AZ® EBR Solvent or AZ® EBR Solvent 70/30.
Further Information
MSDS:
Safety Data Sheet AZ® 125nXT-10B english
Sicherheitsdatenblatt AZ® 125nXT-10B german
TDS:
Technical Data Sheet AZ® 125nXT-10B english
Application Notes:
Further Information about Photoresist Processing
AZ NLOF 2035 Photoresist - 3.785 l
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Bottle size:
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AZ® nLOF 2035
Thick Negative Resist for Lift Off
General Information
AZ® nLOF 2035 Photoresist for 3-5 µm Resist Film Thickness (i-line)
The AZ® nLOF 2000 series is optimised with undercut resist profiles and high resistance to thermal flow for lift-off applications. The three viscosity grades AZ® nLOF 2020 (2.0 µm resist layer thickness at 4000 rpm), AZ® nLOF 2035 (3.5 µm) and AZ® nLOF 2070 (7.0 µm) cover a large resist layer thickness range with a high possible aspect ratio. A post exposure bake is obligatory to carry out the cross-linking initiated during exposure.
Beside the resist types above, MicroChemicals dilutes the AZ® nLOF 2000 series to different thickness levels.
700 nm resist lines attained with the 3.5 µm thick AZ® nLOF 2035.*
Product Properties
AZ® nLOF 2035 for film thickness 3.5 µm @ 3000 rpm
i-line sensitive (365 nm), not g- or h-line sensitive
Very high thermal stability: Almost no rounding of cross-linked resist patterns up to temperatures of 250°C and more.
High chemical stability: Dependant on process parameters, AZ® nLOF 2000 series is stable against many organic solvents as well as strong alkaline media (however, not stable against KOH Si-etches!).
The e-beam sensitivity of the AZ® nLOF 2000 series resists allows the combination of fast UV and high-resolution e-beam lithography. (Please contact us for further information!)
Reproducible undercut for excellent lift off results
High yield in industrial processes due to large process window
Developers
The recommended developer is the AZ® 2026 MIF which works best with AZ® nLof 2000 series. AZ® 326 MIF or AZ® 726 MIF are possible as well. KOH- or NaOH based developers or AZ® Developer will not give reasonable results. Only AZ® 303 Developer can be used in cases, where TMAH based developers are no option.
Removers
The recommended stripper for the AZ® nLOF 2000 series is the NMP-free TechniStrip NI555 or AZ® 910 Remover, which is compatible with all common (even alkaline sensitive) substrate materials and can even dissolve (not only peel from the substrate) cross-linked AZ® nLOF 2070 resist films.
Solvents such as NMP or the untoxic substitute DMSO are suited removers, if the resist film thickness and degree of crosslinking are not too high.
Generally, heating these removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten the resist removal in the case of very thick or strongly cross-linked resist films.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal.
Further Information
MSDS:
Safety Data Sheet AZ® nLOF2035 Photoresist english
Sicherheitsdatenblatt AZ® nLOF2035 Fotolack german
TDS:
Technical Data Sheet AZ® nLOF2000 Series english
Information AZ® nLOF2000 Series english
Application Notes:
Further Information about Photoresist Processing
AZ NLOF 2070 Photoresist - 3.785 l
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Gebindegröße:
3.785 l
AZ® nLOF 2070
Thick Negative Resist for Lift Off
General Information
AZ® nLOF 2070 Photoresist for 5-15 µm Resist Film Thickness (i-line)
The AZ® nLOF 2000 series is optimised with undercut resist profiles and high resistance to thermal flow for lift-off applications. The three viscosity grades AZ® nLOF 2020 (2.0 µm resist layer thickness at 4000 rpm), AZ® nLOF 2035 (3.5 µm) and AZ® nLOF 2070 (7.0 µm) cover a large resist layer thickness range with a high possible aspect ratio. A post exposure bake is obligatory to carry out the cross-linking initiated during exposure.
Beside the resist types above, MicroChemicals dilutes the AZ® nLOF 2000 series to different thickness levels.
A pronounced undercut attained with the AZ® nLOF 2070 in a thickness of 22 µm.
Product Properties
AZ® nLOF 2070 for film thickness 7.0 µm @ 3000 rpm
i-line sensitive (365 nm), not g- or h-line sensitive
Very high thermal stability: Almost no rounding of cross-linked resist patterns up to temperatures of 250°C and more.
High chemical stability: Dependant on process parameters, AZ® nLOF 2000 series is stable against many organic solvents as well as strong alkaline media (however, not stable against KOH Si-etches!).
The e-beam sensitivity of the AZ® nLOF 2000 series resists allows the combination of fast UV and high-resolution e-beam lithography. (Please contact us for further information!)
Reproducible undercut for excellent lift off results
High yield in industrial processes due to large process window
Developers
The recommended developer is the AZ® 2026 MIF which works best with AZ® nLof 2000 series. AZ® 326 MIF or AZ® 726 MIF are possible as well. KOH- or NaOH based developers or AZ® Developer will not give reasonable results. Only AZ® 303 Developer can be used in cases, where TMAH based developers are no option.
Removers
The recommended stripper for the AZ® nLOF 2000 series is the NMP-free TechniStrip NI555 or AZ® 910 Remover, which is compatible with all common (even alkaline sensitive) substrate materials and can even dissolve (not only peel from the substrate) cross-linked AZ® nLOF 2070 resist films.
Solvents such as NMP or the untoxic substitute DMSO are suited removers, if the resist film thickness and degree of crosslinking are not too high.
Generally, heating these removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten the resist removal in the case of very thick or strongly cross-linked resist films.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal.
Further Information
MSDS:
Safety Data Sheet AZ® nLOF2070 Photoresist english
Sicherheitsdatenblatt AZ® nLOF2070 Fotolack german
TDS:
Technical Data Sheet AZ® nLOF2000 Series english
Information AZ® nLOF2000 Series english
Application Notes:
Further Information about Photoresist Processing
AZ NLOF 2070 - diluted 1:1.33 - 0.5 µm-grade (e-beam) - 5.00 l
20705005
Bottle size:
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AZ® nLOF 2070 - diluted 1:1.33 - 0.50 µm-grade (e-beam)
Thick Negative Resist for Lift Off
General Information
AZ® nLOF 2070 Photoresist for 5-15 µm Resist Film Thickness (i-line)
The AZ® nLOF 2000 series is optimised with undercut resist profiles and high resistance to thermal flow for lift-off applications. The three viscosity grades AZ® nLOF 2020 (2.0 µm resist layer thickness at 4000 rpm), AZ® nLOF 2035 (3.5 µm) and AZ® nLOF 2070 (7.0 µm) cover a large resist layer thickness range with a high possible aspect ratio. A post exposure bake is obligatory to carry out the cross-linking initiated during exposure.
Beside the resist types above, MicroChemicals dilutes the AZ® nLOF 2000 series to different thickness levels.
Product Properties
AZ® nLOF 2070 for film thickness 7.0 µm @ 3000 rpm
i-line sensitive (365 nm), not g- or h-line sensitive
Very high thermal stability: Almost no rounding of cross-linked resist patterns up to temperatures of 250°C and more.
High chemical stability: Dependant on process parameters, AZ® nLOF 2000 series is stable against many organic solvents as well as strong alkaline media (however, not stable against KOH Si-etches!).
The e-beam sensitivity of the AZ® nLOF 2000 series resists allows the combination of fast UV and high-resolution e-beam lithography. (Please contact us for further information!)
Reproducible undercut for excellent lift off results
High yield in industrial processes due to large process window
Developers
The recommended developer is the AZ® 2026 MIF which works best with AZ® nLof 2000 series. AZ® 326 MIF or AZ® 726 MIF are possible as well. KOH- or NaOH based developers or AZ® Developer will not give reasonable results. Only AZ® 303 Developer can be used in cases, where TMAH based developers are no option.
Removers
The recommended stripper for the AZ® nLOF 2000 series is the NMP-free TechniStrip NI555 or AZ® 910 Remover, which is compatible with all common (even alkaline sensitive) substrate materials and can even dissolve (not only peel from the substrate) cross-linked AZ® nLOF 2070 resist films.
Solvents such as NMP or the untoxic substitute DMSO are suited removers, if the resist film thickness and degree of crosslinking are not too high.
Generally, heating these removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten the resist removal in the case of very thick or strongly cross-linked resist films.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal.
Further Information
MSDS:
Safety Data Sheet AZ® nLOF2070 Photoresist english
Sicherheitsdatenblatt AZ® nLOF2070 Fotolack german
TDS:
Technical Data Sheet AZ® nLOF2000 Series english
Information AZ® nLOF2000 Series english
Information AZ® nLOF2070 E-beam english
Application Notes:
Further Information about Photoresist Processing
AZ NLOF 5510 Photoresist - 3.785 l
1055100
AZ® nLOF 5510
Thermally Stable Negative Resist
General Information
The AZ® nLOF 5510 is a thin, high-resolution negative resist with high thermal stability. This resist is designed for single layer lift off processes as well as for RIE etching or ion implantation and is compatible with TMAH-based developers.
Product Properties
AZ® nLOF 5510 for film thickness 0.8 µm @ 4000 rpm
i-line sensitive (365 nm), not g- or h-line sensitive
Very high thermal stability: Almost no rounding of cross-linked resist patterns up to temperatures of 250°C and more
Resolution down to 0.25 µm
Can be used for lift off, RIE or implant applications
Developers
Common TMAH based developers are recommended such as AZ® 326 MIF, AZ® 726 MIF or AZ® 2026 MIF Developer.
Removers
The recommended stripper for the AZ® nLOF 5510 resist is the NMP-free TechniStrip NI555 or AZ® 910 Remover, which is compatible with all common (even alkaline sensitive) substrate materials and can even dissolve (not only peel from the substrate) cross-linked AZ® nLOF 5510 resist films.
Solvents such as NMP or the untoxic substitute DMSO are suited removers, if the resist film thickness and degree of crosslinking are not too high.
Generally, heating these removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten the resist removal in the case of very thick or strongly cross-linked resist films.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal.
Further Information
MSDS:
Safety Data Sheet AZ® nLOF5510 Photoresist english
Sicherheitsdatenblatt AZ® nLOF5510 Fotolack german
TDS:
Technical Data Sheet AZ® nLOF5510 english
Application Notes:
Further Information about Photoresist Processing
Developer
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AZ® 2026 MIF Developer
Metal Ion-free Developers
General Information
AZ® 300 MIF, AZ® 326 MIF, AZ® 726 MIF and AZ® 2026 MIF Developers are developer formulations with 2.38 % TMAH (tetramethylammoniumhydroxide) in H2O.
The AZ® 726 MIF Developer contains additionally a surfactant for better wetting and easy to settle up of puddle development. Additionally to the wetting agent of the AZ® 726 MIF the AZ® 2026 MIF contains a scum remover for complete and scum-free removal of resist layers on the price of a slightly higher dark erosion ratio.
However, for our negative resists, such as AZ® nLof 2000 series, AZ® 15nXT series, AZ® 125nXT resists this developer shows outstanding performance. Even for a positive resist like AZ® 10XT resist it significantly reduces t-topping if this problem occurs.
AZ® 2033 MIF is 3.00 % TMAH in H2O with surfactants added for fast and homogeneous substrate wetting and further additives for removal of resist residuals (residues in certain lacquer families), but at the cost of a higher dark removal. Compared to the AZ® 2026 MIF, the normality is not 0.26 but 0.33. Thus the development rate is higher with the AZ® 2033 MIF Developer.
Further Information
MSDS:
Safety Data Sheet AZ® 2026 MIF Developer english
Sicherheitsdatenblatt AZ® 2026 MIF Developer deutsch
TDS:
Technical Data Sheet AZ® 2026 MIF Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack deutsch
AZ 726 MIF Developer - 5.00 l
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AZ® 726 MIF Developer
Metal Ion-free Developers
General Information
AZ® 300 MIF, AZ® 326 MIF, AZ® 726 MIF and AZ® 2026 MIF Developers are developer formulations with 2.38 % TMAH (tetramethylammoniumhydroxide) in H2O.
The AZ® 726 MIF Developer contains additionally a surfactant for better wetting and easy to settle up of puddle development. Additionally to the wetting agent of the AZ® 726 MIF the AZ® 2026 MIF contains a scum remover for complete and scum-free removal of resist layers on the price of a slightly higher dark erosion ratio.
However, for our negative resists, such as AZ® nLof 2000 series, AZ® 15nXT series, AZ® 125nXT resists this developer shows outstanding performance. Even for a positive resist like AZ® 10XT resist it significantly reduces t-topping if this problem occurs.
AZ® 2033 MIF is 3.00 % TMAH in H2O with surfactants added for fast and homogeneous substrate wetting and further additives for removal of resist residuals (residues in certain lacquer families), but at the cost of a higher dark removal. Compared to the AZ® 2026 MIF, the normality is not 0.26 but 0.33. Thus the development rate is higher with the AZ® 2033 MIF Developer.
Further Information
MSDS:
Safety Data Sheet AZ® 726MIF Developer english
Sicherheitsdatenblatt AZ® 726MIF Entwickler german
TDS:
Technical Data Sheet AZ® 726MIF Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack german
AZ 326 MIF Developer - 5.00 l
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AZ® 326 MIF Developer
Metal Ion-free Developers
General Information
AZ® 300 MIF, AZ® 326 MIF, AZ® 726 MIF and AZ® 2026 MIF Developers are developer formulations with 2.38 % TMAH (tetramethylammoniumhydroxide) in H2O.
The AZ® 726 MIF Developer contains additionally a surfactant for better wetting and easy to settle up of puddle development. Additionally to the wetting agent of the AZ® 726 MIF the AZ® 2026 MIF contains a scum remover for complete and scum-free removal of resist layers on the price of a slightly higher dark erosion ratio.
However, for our negative resists, such as AZ® nLof 2000 series, AZ® 15nXT series, AZ® 125nXT resists this developer shows outstanding performance. Even for a positive resist like AZ® 10XT resist it significantly reduces t-topping if this problem occurs.
AZ® 2033 MIF is 3.00 % TMAH in H2O with surfactants added for fast and homogeneous substrate wetting and further additives for removal of resist residuals (residues in certain lacquer families), but at the cost of a higher dark removal. Compared to the AZ® 2026 MIF, the normality is not 0.26 but 0.33. Thus the development rate is higher with the AZ® 2033 MIF Developer.
Further Information
MSDS:
Safety Data Sheet AZ® 326 MIF Developer english
Sicherheitsdatenblatt AZ® 326 MIF Entwickler german
TDS:
Technical Data Sheet AZ® 326 MIF Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack german
AZ Developer - 5.00 l
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AZ® Developer
Inorganic Developers
General Information
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Further Information
MSDS:
Safety Data Sheet AZ® Developer english
Sicherheitsdatenblatt AZ® Developer german
TDS:
Technical Data Sheet AZ® Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack german
AZ 303 Developer - 5.00 l
1000303
AZ® 303 Developer
Inorganic Developers
General Information
AZ® 303 MIC is based on KOH and NaOH and contains strong surfactants. It is designed for positive and aqueous alkaline compatible negative resists, it can be used for AZ® nLof 20XX series resists as well and is the only one TMAH free developer for this resist. AZ® 303 Developer is typically diluted 1:5 - 1:10 with water.
Further Information
MSDS:
Safety Data Sheet AZ® 303 Developer english
Sicherheitsdatenblatt AZ® 303 Entwickler german
TDS:
Technical Data Sheet AZ® 303 Developer english
Application Notes:
Development of Photoresist english
Entwicklung von Fotolack german
Remover
TechniStrip NI555 - 5.00 l - MOS
TNI555M5
TechniStrip® NI555
Stripper
General Information
TechniStrip® NI555 was developed to address fast and complete photoresist film dissolution thus avoiding filter clogging and subsequent insoluble resin debris deposition encountered with most of standard stripping solutions.
A cross-linked AZ® 15 nXT film peels from the substrate in DMSO-, NMP- or TMAH-based strippers, while TechniStrip® NI555 completely dissolves the resist film after 20 minutes.
Product Properties
Flashpoint: 89°C
Water Solubility: Totally miscible
Boiling point: 190°C
Density (at 20°C): 0.978 g/cm3
Compatibility
TechniStrip® NI555 is a powerful remover for Novolak-based negative resists and ultrathick positive resists such as:
AZ® nLOF200 series
AZ® 15nXT
AZ® 40XT
NOTE: Please note that the TechniStrip® NI555 is not compatible with GaAs**, which can cause problems in the application.
Metals: attacked GaAs
Metals: no attack on Al, Cu, Ni, Ta, TaN, Ti, TiN, TiW, Au, Ag, Sn, Pd
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Further Information
MSDS:
Safety Data Sheet TechniStrip NI555 (MOS) english
Sicherheitsdatenblatt TechniStrip NI555 (MOS) german
TDS:
Technical Data Sheet TechniStrip NI555 (MOS) english
Specs:
Specs TechniStrip NI555 (MOS)
Application Notes:
Photoresist Removal english
Fotolack entfernen german
Further Information about Processing
AZ Remover 910 - 5.00 l
1000910
AZ® Remover 910
Organic Solvent Based Remover
General Information
AZ® Remover 910 is designed to strip and dissolve positive and negative-tone, chemically amplified and DNQ/Novolak resists. It is a solvent based product that contains acids and is therefore acidic. The formulation is EH&S friendly, it contains no NMP, DMAC, DMSO and no TMAH and it is amine free.
It is especially suited for our cross-linking negative resists such as AZ® nLof 2070, 2035 and 2020, the AZ® nLof 5110 and the AZ® 15nXT series resists.
Compatibility
It is suitable for processes where sensitive metals and other materials are exposed.
It shows low etch rates on:
Al, Cu, Ti, W, TiW, TiN, Sn, Ni
Si, SiO2
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Further Information
MSDS:
Safety Data Sheet AZ® Remover 910 english
Sicherheitsdatenblatt AZ® Remover 910 german
TDS:
Technical Data Sheet AZ® Remover 910 english
Application Notes:
Photoresist Removal english
Entfernen von Fotolack german
DMSO - 2.50 l - ULSI
MDMU1025
DMSO
Dimethyl Sulfoxide
General Information
Due to its low vapour pressure and its water solubility, DMSO is an excellent stripper for resists respectively Lift-off media and is a non-toxic substitute for the NMP, which has been classified as toxic since a while. The optional addition of Cyclopentanone or MEK increases the performance of the stripper for certain applications and significantly lowers the melting point of pure DMSO.
NOTE:
The solvent DMSO (dimethyl sulfoxide) has a melting point just below room temperature, so it can possi¬bly freeze in storage in cooler rooms. Thawing may require several days, but afterwards the product can still be used as it is.
For more details please download the info letter.
Product Properties
Density: 1.1 g/cm3
Melting point: 18°C
Boiling point: 189°C
Flash point: 87°C
Vapour pressure @ 20°C: 0.56 hPa
DMSO Molecule
Further Information
MSDS:
Safety Data Sheet DMSO (ULSI) english
Sicherheitsdatenblatt DMSO (ULSI) german
Specs:
Specs DMSO (ULSI)
Application Notes:
Solvents: Theory and Application english
Lösemittel: Theorie und Anwendung german
Photoresist Removal english
Fotolack entfernen german
Further Information about Processing