AZ NLOF 2020 Photoresist - 3.785 l
Merck Performance Materials GmbH
AZ® nLOF 2020 is the industrial standard resist for lift off applications with high reproducibility and yield.
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Product number:
1A002020
Manufacturer:
Merck Performance Materials GmbH
Product information "AZ NLOF 2020 Photoresist - 3.785 l"
AZ® nLOF 2020
Thick Negative Resist for Lift Off
General Information
The i-line sensitive negative resist AZ® nLOF 2020 is, with a resist film thickness of approx. 2 µm, the thinnest member of the AZ® nLOF 2000 series, which is primarily optimized for lift-off applications.
700 nm resist lines attained with the 2.0 µm thick AZ® nLOF 2020.
Product Properties
AZ® nLOF 2020 covers a resist film thickness range of - depending on the spin speed - approx. 1.5 - 2.5 µm. It is only i-line sensitive and requires a post exposure bake after exposure to complete the cross-linking induced during exposure. The developed resist structures are (slightly) negative, as desired for lift-off applications, because the upper resist areas receive a slightly higher dose during exposure and thus cross-link more strongly than the resist areas close to the substrate. This undercut can only be increased to a limited extent using a lower exposure dose, because the low resist film thickness is in the range of the penetration depth of the exposure wavelength, meaning that even with low exposure doses it is always exposed through to the substrate. If even thinner resist layers are desired, the AZ® nLOF 2020 can be diluted with PGMEA = AZ® EBR Solvent or the use of AZ® LNR-003 can be considered. For thicker layers, we recommend the AZ® nLOF 2035 (approx. 3 - 4 µm) or the even thicker AZ® nLOF 2070 (> 5 µm), both of which differ from the AZ® nLOF 2020 only in the solvent content.
Developers
TMAH-based developers such as the ready-to-use AZ® 326 MIF (immersion development), AZ® 726 MIF (puddle development) or AZ® 2026 MIF (which uses an additive to promote residue-free development, especially with cross-linking resists) are recommended for developing the AZ® nLOF 2020. KOH- or NaOH-based developers such as the AZ® 400K or AZ® 351Bare generally not suitable for the AZ® nLOF 2020. If TMAH-based developers cannot be used, an attempt with a KOH-based developer in higher concentration than usual can be considered.
Removers
If the resist structures have not been thermally cross-linked too much, for example through metallization, stripping or lift-off with organic solvents (acetone rinsed with isopropanol or DMSO) can be successful. For more strongly cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip NI555 or AZ® 920 Remover are recommended, or in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07.
Thinning/ Edge Bead Removal
If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is an option. PGMEA is the solvent for AZ® nLOF 2020 anyway and is also recommended for edge wall removal if necessary.
Further Information
Our safety data sheets and some of our technical data sheets are password-protected.
You will receive the access data after completing the form.
The access data for the data sheets are not your login data from our shop!
MSDS:
Safety Data Sheet AZ® nLOF2020 Photoresist english
Safety Data Sheet AZ® nLOF2020 Photoresist german
TDS:
Technical Data Sheet AZ® nLOF2000 Series english
Information AZ® nLOF2000 Series english
Application Notes:
Further Information about Photoresist Processing
Related products
AZ 15nXT Photoresist (115cps) - 3.785 l
15nXT1153
Bottle size:
3.785 l
AZ® 15nXT (115CPS)
Thick Negative Resist for Plating
General Information
The i-line sensitive negative resist AZ® 15nXT (115CPS) is a thick resist with approx. 3 - 5 µm film thickness and very steep resist sidewalls for e. g. RIE or electroplating, for example.
5 µm lines at 10 µm resist film thickness.
5 µm holes at 10 µm resist film thickness.
5 µm plated CuNi image.
3.6 µm plated CuNi image.
Product Features
AZ® 15nXT (115CPS) covers a resist film thickness range of - depending on the spin speed - approx. 2 - 3 µm. It is only i-line sensitive and requires a post exposure bake after exposure to complete the cross-linking induced during exposure. The resist structures developed are very vertical with adjusted process parameters, becoming increasingly negative towards thick resist films or - based on the respective resist film thickness - lower exposure doses. If thinner resist films are required, the AZ® 15nXT (115CPS) can be diluted with PGMEA = AZ® EBR Solvent; for thicker layers, the higher viscosity AZ® 15nXT (450CPS) is recommended. AZ® 15nXT (115CPS) is suitable as a mask for the galvanic deposition of e.g. Cu, Ni or Au due to its good adhesion to all common substrate materials and its high chemical stability.
Developers
For the development of the AZ® 15nXT (115CPS), TMAH-based developers such as the ready-to-use AZ® 326 MIF (immersion development), AZ® 726 MIF (puddle development) or AZ® 2026 MIF are recommended, which promotes residue-free development, especially with cross-linking resists, thanks to an additive. KOH- or NaOH-based developers such as the AZ® 400 K or AZ® 351B are generally not suitable for the AZ® 15nXT (115CPS). If TMAH-based developers cannot be used, an attempt with a KOH-based developer in higher concentration than usual can be considered.
Removers
If the resist structures have not been thermally cross-linked too much, for example through metallization, stripping or lift-off with organic solvents (acetone rinsed with isopropanol or DMSO) can be successful. For more strongly cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip NI555 or AZ® 910 Remover are recommended, or in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07.
Thinning/ Edge Wall Removal
If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is an option. PGMEA is the solvent for AZ® 15nXT (115CPS) anyway and is also recommended for edge wall removal if necessary.
Further Information
Our safety data sheets and some of our technical data sheets are password-protected.
You will receive the access data after completing the form.
The access data for the data sheets are not your login data from our shop!
MSDS:
Safety Data Sheet AZ® 15nXT (115CPS) Photoresist english
Safety Data Sheet AZ® 15nXT (115CPS) Photoresist german
TDS:
Technical Data Sheet AZ® 15nXT (115CPS) Photoresist english
Technical Data Sheet AZ® 15nXT Series english
Application Notes:
Further Information about Photoresist Processing
AZ 15nXT Photoresist (450cps) - 3.785 l
15nXT3
Bottle size:
3.785 l
AZ® 15nXT (450CPS)
Thick Negative Resist for Plating
General Information
The i-line sensitive negative resist AZ® 15nXT (450CPS) is a thick resist with a thickness of approx. 5 - 10 µm and vertical resist sidewalls for RIE or electroplating, for example.
5 µm lines at 10 µm resist film thickness.
5 µm holes at 10 µm resist film thickness.
5 µm plated CuNi image.
3.6 µm plated CuNi image.
Product Features
AZ® 15nXT (450CPS) covers a resist film thickness range of - depending on the spin speed - approx. 5 - 10 µm. It is only i-line sensitive and requires a post exposure bake after exposure to complete the cross-linking induced during exposure. With adjusted process parameters, the resist structures developed are vertical, increasingly negative towards thick resist films or - based on the respective resist film thickness - lower exposure doses. If thinner resist films are required, the AZ® 15nXT (450CPS) can be diluted with PGMEA = AZ® EBR Solvent. AZ® 15nXT (450CPS) is suitable as a mask for the galvanic deposition of e.g. Cu, Ni or Au due to its good adhesion to all common substrate materials and its high chemical stability.
Developers
For the development of the AZ® 15nXT (450CPS), TMAH-based developers such as the ready-to-use AZ® 326 MIF (immersion development), AZ® 726 MIF (puddle development) or AZ® 2026 MIF are recommended, which promotes residue-free development, especially with cross-linking resists, thanks to an additive. KOH- or NaOH-based developers such as the AZ® 400 K or AZ® 351B are generally not suitable for the AZ® 15nXT (450CPS). If TMAH-based developers cannot be used, an attempt with a KOH-based developer in higher concentration than usual can be considered.
Removers
If the resist structures have not been thermally cross-linked too much, for example through metallization, stripping or lift-off with organic solvents (acetone rinsed with isopropanol or DMSO) can be successful. For more strongly cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip NI555 or AZ® 910 Remover are recommended, or in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07.
Thinning/ Edge Wall Removal
If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is an option. PGMEA is the solvent for AZ® 15nXT (450CPS) anyway and is also recommended for edge wall removal if necessary.
Further Information
Our safety data sheets and some of our technical data sheets are password-protected.
You will receive the access data after completing the form.
The access data for the data sheets are not your login data from our shop!
MSDS:
Safety Data Sheet AZ® 15nXT (450CPS) Photoresist english
Safety Data Sheet AZ® 15nXT (450CPS) Photoresist german
TDS:
Technical Data Sheet AZ® 15nXT (450CPS) Photoresist english
Technical Data Sheet AZ® 15nXT Series english
Information AZ® 15nXT (450CPS) Photoresist english
Application Notes:
Further Information about Photoresist Processing
AZ 125nXT-10B Photoresist - 3.785 l
1125nXT10B
Bottle size:
3.785 l
AZ® 125nXT-10B
Ultra-Thick Negative Resist for Plating
General Information
The AZ® 125nXT-10B is an i-line sensitive, negative ultra-thick resist with steep resist sidewalls and high aspect ratio.
20 µm lines at 60 µm resist film thickness.
15 µm holes at 60 µm resist film thickness.
80 µm plated CuNi image.
Product Features
The ultra-thick negative resist AZ® 125nXT-10B covers a resist film thickness range of 20 - 50 µm and can be built up and processed to 100 µm and much more with adapted spin profiles. AZ® 125nXT-10B is only i-line sensitive and, as a special feature (for negative resists), does not require a post exposure bake after exposure for cross-linking, i.e. the AZ® 125nXT-10B photopolymerizes. Due to its low absorption, even very thick resist layers can be easily exposed and steep resist sidewalls can be achieved. This and its very good adhesion to all common substrate materials make this resist suitable for the galvanic molding of thick to very thick layers as well as DRIE. With low exposure doses or very thick resist layers - related to the respective resist film thickness - the resist profile becomes slightly negative, since the resist areas close to the substrate experience less cross-linking. If the electroplating process shows that these weakly cross-linked areas of the resist are attacked, but a higher structuring exposure dose is not an option, flood exposure (without a photomask) after development with very high doses can cross-link the resist sidewalls even near the substrate, which, however, makes it more difficult to strip the resist later. Even after such flood exposure, no further post exposure back is necessary. AZ® 125nXT-10B can generally be processed with resist films of less than 20 µm thick, but processing becomes problematic below 10 µm thickness: Since the additive responsible for cross-linking escapes from the resist surface during softbaking, only a few micrometers of the exposed resist surface are removed during development, which accounts for a correspondingly large proportion of the total thickness in the case of thin resist films.
Developers
AZ® 326 MIF (immersion development), AZ® 726 MIF (puddle development) or AZ® 2026 MIF (which has an additive that promotes residue-free development, especially with cross-linking resists) are recommended for developing the AZ® 125nXT-10B. KOH- or NaOH-based developers such as AZ® 400K or AZ® 351B are generally not suitable for the AZ® 125nXT-10B. If TMAH-based developers cannot be used, a KOH-based developer in higher concentration than usual can be considered.
Removers
AZ® 125nXT-10B can be removed wet-chemically using conventional strippers, but stripping very thick cross-linked resist structures can be quite a challenge. If organic solvents are preferred for this, (hot) DMSO is recommended, which does not dissolve cross-linked resists, but can detach them from the substrate after a certain exposure time. This process can be accelerated by reducing the degree of cross-linking of the resist near the substrate by using a lower exposure dose. Alternatively, high-performance strippers such as the NMP-free TechniStrip P1316 are recommended, or in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07.
Thinning/ Edge Wall Removal
If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is an option. PGMEA is the solvent for AZ® 125nXT-10B anyway and is also recommended for edge wall removal if necessary.
Further Information
Our safety data sheets and some of our technical data sheets are password-protected.
You will receive the access data after completing the form.
The access data for the data sheets are not your login data from our shop!
MSDS:
Safety Data Sheet AZ® 125nXT-10B english
Safety Data Sheet AZ® 125nXT-10B german
TDS:
Technical Data Sheet AZ® 125nXT-10B english
Application Notes:
Further Information about Photoresist Processing
AZ NLOF 2035 Photoresist - 3.785 l
1A002035
Bottle size:
3.785 l
AZ® nLOF 2035
Thick Negative Resist for Lift Off
General Information
The i-line sensitive negative resist AZ® nLOF 2035 with a resist film thickness of approx. 3 - 4 µm is a member of the AZ® nLOF 2000 series, which is primarily optimized for lift-off applications.
700 nm resist lines attained with the 3.5 µm thick AZ® nLOF 2035.
Product Properties
AZ® nLOF 2035 covers a resist film thickness range of - depending on the spin speed - approx. 3 - 4 µm. It is only i-line sensitive and requires a post exposure bake after exposure to complete the cross-linking induced during exposure. The developed resist structures are pronounced negative, as desired for lift-off applications, since the upper resist areas receive a higher dose during exposure and thus cross-link more strongly than the resist areas close to the substrate. Using a lower exposure dose, in conjunction with a slightly hotter post exposure bake, this undercut can be increased to a certain extent to enable even more critical lift-off applications. If thinner resist layers are desired, the AZ® nLOF 2035 can be diluted with PGMEA = AZ® EBR Solvent or the AZ® nLOF 2020 can be used. For thicker layers, the AZ® nLOF 2070 (> 5 µm) is recommended; both differ from the AZ® nLOF 2035 only in the solvent content.
Developers
TMAH-based developers such as the ready-to-use AZ® 326 MIF (immersion development), AZ® 726 MIF (puddle development) or AZ® 2026 MIF (which uses an additive to promote residue-free development, especially with cross-linking resists) are recommended for developing the AZ® nLOF 2035. KOH- or NaOH-based developers such as the AZ® 400K or AZ® 351B are generally not suitable for the AZ® nLOF 2035. If TMAH-based developers cannot be used, an attempt with a KOH-based developer in higher concentration than usual can be considered.
Removers
If the resist structures have not been thermally cross-linked too much, for example through metallization, stripping or lift-off with organic solvents (acetone rinsed with isopropanol or DMSO) can be successful. For more strongly cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip NI555 or AZ® 920 Remover are recommended, or in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07.
Thinning/ Edge Bead Removal
If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is an option. PGMEA is the solvent for AZ® nLOF 2035 anyway and is also recommended for edge wall removal if necessary.
Further Information
Our safety data sheets and some of our technical data sheets are password-protected.
You will receive the access data after completing the form.
The access data for the data sheets are not your login data from our shop!
MSDS:
Safety Data Sheet AZ® nLOF2035 Photoresist english
Safety Data Sheet AZ® nLOF2035 Photoresist german
TDS:
Technical Data Sheet AZ® nLOF2000 Series english
Information AZ® nLOF2000 Series english
Application Notes:
Further Information about Photoresist Processing
AZ NLOF 2070 Photoresist - 3.785 l
1A002070
Bottle size:
3.785 l
AZ® nLOF 2070
Thick Negative Resist for Lift Off
General Information
The i-line sensitive negative resist AZ® nLOF 2070 is with approx. 5 - 10 µm resist film thickness the thickest member of the AZ® nLOF 2000 series, which is primarily optimized for lift-off applications.
A pronounced undercut attained with the AZ® nLOF 2070 in a thickness of 22 µm.
Product Properties
AZ® nLOF 2070 covers a resist film thickness range of - depending on the spin speed - approx. 5 - 10 µm. It is only i-line sensitive and requires a post exposure bake after exposure to complete the cross-linking induced during exposure. The developed resist structures are, as desired for lift-off applications, distinctly negative, since the upper resist areas receive a much higher dose during exposure and thus cross-link more strongly than the resist areas close to the substrate. Using a lower exposure dose, in conjunction with a slightly hotter post exposure bake, this undercut can also be increased significantly to enable more critical lift-off applications (sputtered or thicker layers). If thinner resist layers are required, the AZ® nLOF 2070 can be diluted with PGMEA = AZ® EBR Solvent or the AZ® nLOF 2035 or even thinner AZ® nLOF 2020 can be used, both differing only in the solvent content.
Developers
TMAH-based developers such as the ready-to-use AZ® 326 MIF (immersion development), AZ® 726 MIF (puddle development) or AZ® 2026 MIF (which uses an additive to promote residue-free development, especially with cross-linking resists) are recommended for developing the AZ® nLOF 2070. KOH- or NaOH-based developers such as the AZ® 400K or AZ® 351B are generally not suitable for the AZ® nLOF 2070. If TMAH-based developers cannot be used, an attempt with a KOH-based developer in higher concentration than usual can be considered.
Removers
If the resist structures have not been thermally cross-linked too much, for example through metallization, stripping or lift-off with organic solvents (acetone rinsed with isopropanol or DMSO) can be successful. For more strongly cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip NI555 or AZ® 920 Remover are recommended, or in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07.
Thinning/ Edge Bead Removal
If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is an option. PGMEA is the solvent for AZ® nLOF 2070 anyway and is also recommended for edge wall removal if necessary.
Further Information
Our safety data sheets and some of our technical data sheets are password-protected.
You will receive the access data after completing the form.
The access data for the data sheets are not your login data from our shop!
MSDS:
Safety Data Sheet AZ® nLOF2070 Photoresist english
Safety Data Sheet AZ® nLOF2070 Photoresist german
TDS:
Technical Data Sheet AZ® nLOF2000 Series english
Information AZ® nLOF2000 Series english
Application Notes:
Further Information about Photoresist Processing
AZ NLOF 2070 - diluted 1:1.33 - 0.5 µm-grade (e-beam) - 5.00 l
20705005
Bottle size:
5.00 l
AZ® nLOF 2070 - diluted 1:1.33 - 0.50 µm-grade (e-beam)
Thick Negative Resist for Lift Off
General Information
AZ® nLOF 2070 Photoresist for 5-15 µm Resist Film Thickness (i-line)
The AZ® nLOF 2000 series is optimised with undercut resist profiles and high resistance to thermal flow for lift-off applications. The three viscosity grades AZ® nLOF 2020 (2.0 µm resist layer thickness at 4000 rpm), AZ® nLOF 2035 (3.5 µm) and AZ® nLOF 2070 (7.0 µm) cover a large resist layer thickness range with a high possible aspect ratio. A post exposure bake is obligatory to carry out the cross-linking initiated during exposure.
Beside the resist types above, MicroChemicals dilutes the AZ® nLOF 2000 series to different thickness levels.
Product Properties
AZ® nLOF 2070 for film thickness 7.0 µm @ 3000 rpm
i-line sensitive (365 nm), not g- or h-line sensitive
Very high thermal stability: Almost no rounding of cross-linked resist patterns up to temperatures of 250°C and more.
High chemical stability: Dependant on process parameters, AZ® nLOF 2000 series is stable against many organic solvents as well as strong alkaline media (however, not stable against KOH Si-etches!).
The e-beam sensitivity of the AZ® nLOF 2000 series resists allows the combination of fast UV and high-resolution e-beam lithography. (Please contact us for further information!)
Reproducible undercut for excellent lift off results
High yield in industrial processes due to large process window
Developers
The recommended developer is the AZ® 2026 MIF which works best with AZ® nLof 2000 series. AZ® 326 MIF or AZ® 726 MIF are possible as well. KOH- or NaOH based developers or AZ® Developer will not give reasonable results. Only AZ® 303 Developer can be used in cases, where TMAH based developers are no option.
Removers
The recommended stripper for the AZ® nLOF 2000 series is the NMP-free TechniStrip NI555 or AZ® 910 Remover, which is compatible with all common (even alkaline sensitive) substrate materials and can even dissolve (not only peel from the substrate) cross-linked AZ® nLOF 2070 resist films.
Solvents such as NMP or the untoxic substitute DMSO are suited removers, if the resist film thickness and degree of crosslinking are not too high.
Generally, heating these removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten the resist removal in the case of very thick or strongly cross-linked resist films.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal.
Further Information
MSDS:
Safety Data Sheet AZ® nLOF2070 Photoresist english
Sicherheitsdatenblatt AZ® nLOF2070 Fotolack german
TDS:
Technical Data Sheet AZ® nLOF2000 Series english
Information AZ® nLOF2000 Series english
Information AZ® nLOF2070 E-beam english
Application Notes:
Further Information about Photoresist Processing
AZ NLOF 5510 Photoresist - 3.785 l
1055100
AZ® nLOF 5510
Thermally Stable Negative Resist
General Information
The AZ® nLOF 5510 is a thin, high-resolution negative resist with high thermal stability. This resist is designed for single layer lift off processes as well as for RIE etching or ion implantation and is compatible with TMAH-based developers.
Product Properties
AZ® nLOF 5510 for film thickness 0.8 µm @ 4000 rpm
i-line sensitive (365 nm), not g- or h-line sensitive
Very high thermal stability: Almost no rounding of cross-linked resist patterns up to temperatures of 250°C and more
Resolution down to 0.25 µm
Can be used for lift off, RIE or implant applications
Developers
Common TMAH based developers are recommended such as AZ® 326 MIF, AZ® 726 MIF or AZ® 2026 MIF Developer.
Removers
The recommended stripper for the AZ® nLOF 5510 resist is the NMP-free TechniStrip NI555 or AZ® 910 Remover, which is compatible with all common (even alkaline sensitive) substrate materials and can even dissolve (not only peel from the substrate) cross-linked AZ® nLOF 5510 resist films.
Solvents such as NMP or the untoxic substitute DMSO are suited removers, if the resist film thickness and degree of crosslinking are not too high.
Generally, heating these removers up to 60 - 80°C, or/and ultrasonic treatment, might be required to fasten the resist removal in the case of very thick or strongly cross-linked resist films.
Thinning/ Edge Bead Removal
We recommend for thinning and edge bead removal the AZ® EBR Solvent or PGMEA. AZ® EBR Solvent 70/30 is possible as well for edge bead removal.
Further Information
MSDS:
Safety Data Sheet AZ® nLOF5510 Photoresist english
Sicherheitsdatenblatt AZ® nLOF5510 Fotolack german
TDS:
Technical Data Sheet AZ® nLOF5510 english
Application Notes:
Further Information about Photoresist Processing
Developer
AZ 2026 MIF Developer - 5.00 l
1002026
AZ® 2026 MIF Developer
Metal Ion-free Developers
General Information
AZ® 2026 MIF is a TMAH-based developer for dip or puddle development, compatible with all AZ® photoresists from our portfolio.
Product Properties
The ready-to-use AZ® 2026 MIF developer is an aqueous 2.38% TMAH solution with a surfactant for uniform substrate wetting for puddle development, but is also suitable for immersion development. In addition, the AZ® 2026 MIF contains an additive to promote residue-free development with cross-linked resist structures. Since this additive slightly increases the dark erosion in positive resists, the AZ® 2026 MIF is less suitable for these resists, especially when high resolution requirements are required; in this case, the AZ® 326 MIF or AZ® 726 MIF would be the better choice. TMAH-based developers are always used when development has to be carried out metal ion free. In addition, TMAH-based developers are primarily recommended for our chemically amplified positive resists and our negative resists. For standard (non chemically amplified), DNQ-based positive resists without the requirement of metal ion-free development, a KOH or NaOH-based developer such as AZ® 400K or AZ® 351B can be considered instead of a TMAH-based developer for cost reasons. For very thin resist layers (< 1 µm) or very high resolution requirements, it can be useful to dilute AZ® 2026 MIF with water (AZ® 2026 MIF: water = 2:1 to a maximum of 1:1). AZ® 2026 MIF attacks aluminum with an etching rate of approx. 70 nm/min. If this cannot be tolerated, the Al-compatible "AZ® Developer " is an alternative, but this is based on sodium compounds and is therefore not metal ion-free.
Further Information
Our safety data sheets and some of our technical data sheets are password-protected.
You will receive the access data after completing the form.
The access data for the data sheets are not your login data from our shop!
MSDS:
Safety Data Sheet AZ® 2026 MIF Developer english
Safety Data Sheet AZ® 2026 MIF Developer german
TDS:
Technical Data Sheet AZ® 2026 MIF Developer english
Application Notes:
Further Information about development of photoreist english
Further Information about development of photoresist german
AZ 726 MIF Developer - 5.00 l
1000726
AZ® 726 MIF Developer
Metal Ion-free Developers
General Information
AZ® 726 MIF is a TMAH-based developer for dip or puddle development, compatible with all AZ® photoresists from our portfolio.
Product Features
The ready-to-use AZ® 726 MIF Developer is an aqueous 2.38% TMAH solution with a surfactant for even substrate wetting for puddle development, but is also suitable for immersion development. For spray development, the surfactant-free AZ® 326 MIF would be the better choice to avoid foaming. TMAH-based developers are always used when metal ion-free development is required. In addition, TMAH-based developers are primarily recommended for our chemically amplified positive resists and our negative resists. For standard (non chemically amplified), DNQ-based positive resists without the requirement for metal ion-free development, a KOH or NaOH-based developer such as AZ® 400K or AZ® 351B can be considered instead of a TMAH-based developer for cost reasons. For cross-linking negative resists, the AZ® 2026 MIF can prove to be advantageous, as it promotes residue-free development with these resists thanks to certain additives. For very thin resist layers (< 1 µm) or very high resolution requirements, it can be useful to dilute the AZ® 726 MIF Developer with water (AZ® 726 MIF: water = 2:1 to a maximum of 1:1). AZ® 726 MIF attacks aluminum with an etching rate of approx. 70 nm/min. If this cannot be tolerated, the Al-compatible AZ® Developer is an alternative, but this is based on sodium compounds and is therefore not free of metal ions.
Further Information
Our safety data sheets and some of our technical data sheets are password-protected.
You will receive the access data after completing the form.
The access data for the data sheets are not your login data from our shop!
MSDS:
Safety Data Sheet AZ® 726 MIF Developer english
Safety Data Sheet AZ® 726 MIF Entwickler german
TDS:
Technical Data Sheet AZ® 726 MIF Developer english
Application Notes:
Development of Photoresist english
Development of Photoresist german
AZ 326 MIF Developer - 5.00 l
1000326
AZ® 326 MIF Developer
Metal Ion-free Developer
General Information
AZ® 326 MIF is a TMAH-based developer for dip or spray development, compatible with all AZ®</sup photoresists from our portfolio.
Product Features
The ready-to-use AZ® 326 MIF developer is an aqueous 2.38% TMAH solution without any additives. This makes it suitable for dip or spray development, but less for puddle development, for which the AZ® 726 MIF developer is the better choice due to its special surfactant for substrate wetting. TMAH-based developers are always used when development must be carried out metal ion free. In addition, TMAH- based developers are primarily recommended for our chemically amplified positive resists and our negative resists. For very thin resist layers (< 1 µm) or very high resolution requirements, it can be useful to dilute the AZ® 326 MIF with water (AZ® 326 MIF : water = 2:1 to a maximum of 1:1). AZ® 326 MIF attacks aluminum with an etching rate of approx. 70 nm/min. If this cannot be tolerated, the Al-compatible AZ® Developer is an alternative, which, however, is based on sodium compounds and is therefore not metal ion-free.
For standard (non chemically amplified), DNQ-based positive resists without the requirement of metal ion-free development, a KOH- or NaOH-based developer such as AZ® 400K or AZ® 351B can be considered instead of a TMAH-based developer for cost reasons. For cross-linking negative resists, AZ® 2026 MIF can prove advantageous, which promotes residue-free development with these resists through certain additives.
Further Information
Our safety data sheets and some of our technical data sheets are password-protected.
You will receive the access data after completing the form.
The access data for the data sheets are not your login data from our shop!
MSDS:
Safety Data Sheet AZ® 326 MIF Developer english
Safety Data Sheet AZ® 326 MIF Entwickler german
TDS:
Technical Data Sheet AZ® 326 MIF Developer english
Application Notes:
Development of Photoresist english
Development of Photoresist german
AZ Developer - 5.00 l
1000001
AZ® Developer
Inorganic, Metal Ion Containing Developer
General Information
AZ® Developer is a sodium salt-based, aluminum-compatible developer for non-chemically amplified positive resists.
Product Features
AZ® Developer is based on an aqueous Sodium metasilicate/Sodium phosphate solution. In contrast to NaOH, KOH or TMAH-based developers, this developer does not show any significant aluminum attack and is suitable for the development of non-chemically amplified positive resists. For thicker resist layers or when the requirements for resolution and steepness of the resist sidewalls are not too high, the AZ® Developer can be used undiluted. For thin resists and higher resolution requirements, it can be diluted 1:1 with water. An AZ® Developer: Water = 2:1 dilution represents a good compromise for many applications. For negative resists or chemically amplified positive resists, the AZ® Developer usually does not show satisfactory results. TMAH-based developers are recommended for these, but these are not aluminum compatible.
Further Information
Our safety data sheets and some of our technical data sheets are password-protected.
You will receive the access data after completing the form.
The access data for the data sheets are not your login data from our shop!
MSDS:
Safety Data Sheet AZ® Developer english
Safety Data Sheet AZ® Developer german
TDS:
Technical Data Sheet AZ® Developer english
Application Notes:
Development of Photoresist english
Development of Photoresist german
AZ 303 Developer - 5.00 l
1000303
AZ® 303 Developer
Inorganic, Metal Ion Containing Developer
General Information
AZ® 303 MIC is a KOH and NaOH based developer for positive and negative resists.
Product Features
AZ® 303 Developer is based on an aqueous KOH and NaOH solution and contains strong surfactants. It is compatible with positive and negative resists and is therefore suitable, for example, as the only non-TMAH-based developer for the AZ® nLOF 2000 series. AZ® 303 Developer is usually used diluted 1: 5 - 1:10 with water.
Further Information
Our safety data sheets and some of our technical data sheets are password-protected.
You will receive the access data after completing the form.
The access data for the data sheets are not your login data from our shop!
MSDS:
Safety Data Sheet AZ® 303 Developer english
Safety Data Sheet AZ ® 303 Entwickler german
TDS:
Technical Data Sheet AZ® 303 Developer english
Application Notes:
Development of Photoresist english
Development of Photoresist german
Remover
TechniStrip NI555 - 5.00 l - MOS
TNI555M5
TechniStrip® NI555
Stripper
General Information
TechniStrip® NI555 was developed to address fast and complete photoresist film dissolution thus avoiding filter clogging and subsequent insoluble resin debris deposition encountered with most of standard stripping solutions.
A cross-linked AZ® 15 nXT film peels from the substrate in DMSO-, NMP- or TMAH-based strippers, while TechniStrip® NI555 completely dissolves the resist film after 20 minutes.
Product Properties
Flashpoint: 89°C
Water Solubility: Totally miscible
Boiling point: 190°C
Density (at 20°C): 0.978 g/cm3
Compatibility
TechniStrip® NI555 is a powerful remover for Novolak-based negative resists and ultrathick positive resists such as:
AZ® nLOF200 series
AZ® 15nXT
AZ® 40XT
NOTE: Please note that the TechniStrip® NI555 is not compatible with GaAs**, which can cause problems in the application.
Metals: attacked GaAs
Metals: no attack on Al, Cu, Ni, Ta, TaN, Ti, TiN, TiW, Au, Ag, Sn, Pd
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Further Information
MSDS:
Safety Data Sheet TechniStrip NI555 (MOS) english
Sicherheitsdatenblatt TechniStrip NI555 (MOS) german
TDS:
Technical Data Sheet TechniStrip NI555 (MOS) english
Specs:
Specs TechniStrip NI555 (MOS)
Application Notes:
Photoresist Removal english
Fotolack entfernen german
Further Information about Processing
AZ Remover 910 - 5.00 l
1000910
AZ® Remover 910
Organic Solvent Based Remover
General Information
AZ® Remover 910 is designed to strip and dissolve positive and negative-tone, chemically amplified and DNQ/Novolak resists. It is a solvent based product that contains acids and is therefore acidic. The formulation is EH&S friendly, it contains no NMP, DMAC, DMSO and no TMAH and it is amine free.
It is especially suited for our cross-linking negative resists such as AZ® nLof 2070, 2035 and 2020, the AZ® nLof 5110 and the AZ® 15nXT series resists.
Compatibility
It is suitable for processes where sensitive metals and other materials are exposed.
It shows low etch rates on:
Al, Cu, Ti, W, TiW, TiN, Sn, Ni
Si, SiO2
Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details.
Further Information
MSDS:
Safety Data Sheet AZ® Remover 910 english
Sicherheitsdatenblatt AZ® Remover 910 german
TDS:
Technical Data Sheet AZ® Remover 910 english
Application Notes:
Photoresist Removal english
Entfernen von Fotolack german
DMSO - 2.50 l - ULSI
MDMU1025
DMSO
Dimethyl Sulfoxide
General Information
Due to its low vapour pressure and its water solubility, DMSO is an excellent stripper for resists respectively Lift-off media and is a non-toxic substitute for the NMP, which has been classified as toxic since a while. The optional addition of Cyclopentanone or MEK increases the performance of the stripper for certain applications and significantly lowers the melting point of pure DMSO.
NOTE:
The solvent DMSO (dimethyl sulfoxide) has a melting point just below room temperature, so it can possi¬bly freeze in storage in cooler rooms. Thawing may require several days, but afterwards the product can still be used as it is.
For more details please download the info letter.
Product Properties
Density: 1.1 g/cm3
Melting point: 18°C
Boiling point: 189°C
Flash point: 87°C
Vapour pressure @ 20°C: 0.56 hPa
DMSO Molecule
Further Information
MSDS:
Safety Data Sheet DMSO (ULSI) english
Sicherheitsdatenblatt DMSO (ULSI) german
Specs:
Specs DMSO (ULSI)
Application Notes:
Solvents: Theory and Application english
Lösemittel: Theorie und Anwendung german
Photoresist Removal english
Fotolack entfernen german
Further Information about Processing